Biasing circuitry

Patent metadata

Field	Value
Publication number	US-9692370-B2
Application number	US-201514862144-A
Country	US
Kind code	B2
Filing date	Sep 22, 2015
Priority date	Jun 17, 2015
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A biasing circuitry is disclosed. The biasing circuitry includes a biasing module, electrically connected to a power amplifier; and a control series, having an end electrically connected to a positive voltage, and another end electrically connected to the biasing module. The control series includes a switch unit, controlled by a control voltage to be on or off; and a voltage-drop unit, connected to the switch unit in series. The voltage-drop unit is configured to adjust a bias point of the power amplifier.

First claim

What is claimed is:

1. A biasing circuitry, configured to provide a bias point for an amplifying circuit, the biasing circuitry comprising:
a biasing module, formed within a first die via a semiconductor process, the biasing module electrically connected to the amplifying circuit and configured to provide the bias point to the amplifying circuit; and
a control series, disposed outside the first die, having an end electrically connected to a positive voltage and another end electrically connected to the biasing module, the control series comprising:
a voltage-drop unit, configured to adjust the bias point of the amplifying circuit; and
a switch unit, connected to the voltage drop unit in series, controlled by a control voltage and configured to be conducted or cutoff, so as to control the amplifying circuit to be enabled or disabled.

2. The biasing circuitry of claim 1 , wherein the amplifying circuit is a power amplifier or a low noise amplifier.

3. The biasing circuitry of claim 1 , wherein the amplifying circuit comprises a heterojunction bipolar transistor (HBT) or a high electron mobility transistor (HEMT).

4. The biasing circuitry of claim 1 , wherein the semiconductor process is a Gallium Arsenide (GaAs) semiconductor process.

5. The biasing circuitry of claim 1 , wherein the switch unit is a field effect transistor (FET) or a high electron mobility transistor (HEMT).

6. The biasing circuitry of claim 5 , wherein a gate of the switch unit is configured to receive the control voltage.

7. The biasing circuitry of claim 1 , wherein the voltage-drop unit comprises at least a resistor, configured to adjust the bias point of the amplifying circuit.

Assignees

• Win Semiconductors Corp

Inventors

• Chiu Jui-Chieh
• Huang Fan-Hsiu
• Huang Chih-Wen

Classifications

• H03F3/21 Primary

  with semiconductor devices only {(H03F3/245 takes precedence)} · CPC title

• H03F3/19

  with semiconductor devices only · CPC title

• H03F1/303

  using a switching device (H03F1/305, H03F3/005, H03F3/38 take precedence) · CPC title

• H03F2200/451

  the amplifier being a radio frequency amplifier · CPC title

• H03F2200/27

  A biasing circuit node being switched in an amplifier circuit · CPC title