High-concentration active doping in semiconductors and semiconductor devices produced by such doping

Patent metadata

Field	Value
Publication number	US-9692209-B2
Application number	US-201214124004-A
Country	US
Kind code	B2
Filing date	Mar 1, 2012
Priority date	Jun 10, 2011
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

First claim

We claim:

1. A method of forming a photonic device, the method comprising:
forming a germanium active layer on a silicon substrate;
in situ n-type doping the germanium active layer during formation of the active layer;
forming a dopant atom reservoir of n-type dopant atoms at the germanium active layer after formation of the active layer; and
diffusing dopant atoms from the dopant atom reservoir of n-type dopant atoms through the germanium active layer.

2. The method of claim 1 wherein forming the germanium active layer comprises a process selected from the group of chemical vapor deposition, molecular beam epitaxy, and atomic layer deposition; and wherein forming the dopant atom reservoir of n-type dopant atoms at the germanium active layer comprises a process selected from the group of chemical vapor deposition, molecular beam epitaxy, and atomic layer deposition.

3. The method of claim 2 wherein forming the germanium active layer consists of chemical vapor deposition of the germanium active layer, and wherein forming the dopant atom reservoir of n-type dopant atoms at the germanium active layer consists of chemical vapor deposition of the dopant atom reservoir.

4. The method of claim 3 wherein forming the germanium active layer comprises chemical vapor deposition comprising flow of GeH 4 precursor gas and wherein in situ doping of the germanium active layer comprises flow of PH 3 precursor gas.

5. The method of claim 1 wherein forming the dopant atom reservoir of n-type dopant atoms comprises forming at least a partial monolayer of dopant atoms on a surface of the germanium active layer.

6. The method of claim 5 further comprising forming an encapsulation layer on top of the at least partial monolayer of dopant atoms.

7. The method of claim 5 wherein the encapsulation layer comprises a layer of germanium.

8. The method of claim 5 wherein forming at least a partial monolayer of dopant atoms comprises cyclically forming at least a partial monolayer of dopant atoms and an encapsulation layer to produce a stack of encapsulated dopant atom layers on a surface of the germanium active layer.

9. The method of claim 1 wherein forming the dopant atom reservoir of n-type dopant atoms comprises ion implantation of dopant atoms into the semiconducting material layer.

10. The method of claim 1 further comprising, after diffusing dopant atoms through the germanium active layer, removing the dopant atom reservoir of n-type dopant atoms from the germanium active layer.

11. A structure for forming a photonic device comprising:
a silicon substrate;
an active layer of germanium disposed on the silicon substrate, the germanium active layer including an n-type dopant concentration of at least about 5×10 18 cm −3 ; and
a stack of at least one dopant reservoir layer disposed on top of the germanium active layer, each dopant reservoir layer consisting of a least a partial monolayer of phosphorus dopant atoms, a germanium encapsulation layer being disposed between each dopant reservoir layer to in the stack.

12. The structure of claim 11 further comprising a germanium buffer layer disposed between the substrate and the germanium active layer.

13. The structure of claim 11 further comprising a layer selected from the group of amorphous silicon and polycrystalline silicon, disposed on top of the stack of dopant reservoir layers.

14. The structure of claim 11 wherein the silicon substrate comprises as silicon-on-insulator substrate.

15. The structure of claim 11 wherein the germanium active layer includes an electrically activated n-type dopant concentration of at least about 2×10 19 cm −3 .

16. An electrically-pumped photonic device comprising:
two silicon electrodes, each electrode characterized by an electrical loss factor that contributes to an electrical loss total for the photonic device; and
an active layer of germanium disposed between the two silicon electrodes for electrical pumping of the active layer;
wherein the germanium active layer supports an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than a background dopant concentration characteristic of the active layer as-formed, to overcome the electrical loss total for the photonic device.

17. The device of claim 16 wherein the germanium active layer is a mesa disposed in a window of a silicon dioxide layer.

18. The device of claim 16 wherein one of the silicon electrodes comprises polycrystalline silicon.

19. The device of claim 16 wherein one of the silicon electrodes comprises a layer of silicon on a silicon-on-insulator substrate.

20. The device of claim 16 wherein the germanium active layer includes an electrically activated n-type dopant concentration of at least about 2×10 19 cm −3 .

21. A method of forming a photonic device, the method comprising:
forming a first silicon electrode;
forming a germanium active layer on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium;
forming a second silicon electrode on a surface of the germanium active layer; and
electrically doping the formed germanium active layer with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

22. The method of claim 21 wherein the germanium active layer is formed by chemical vapor deposition.

23. The method of claim 21 wherein forming a first silicon electrode comprises providing an electrically doped silicon substrate.

24. The method of claim 21 wherein forming a second electrode comprises forming a layer of amorphous silicon on the germanium active layer and converting the amorphous silicon to polycrystalline silicon.

25. The method of claim 21 wherein electrically doping the formed germanium active layer comprises doping the germanium active layer with an electrically activated n-type dopant concentration of at least about 2×10 19 cm −3 .

Assignees

• Bessette Jonathan T
• Cai Yan
• Camacho-Aguilera Rodolfo E
• Liu Jifeng
• Kimerling Lionel
• Michel Jurgen
• Massachusetts Inst Technology

Inventors

• Bessette Jonathan T
• Cai Yan
• Camacho-Aguilera Rodolfo E
• Liu Jifeng
• Kimerling Lionel
• Michel Jurgen

Classifications

• H10P32/1408

  from or through or into an external applied layer, e.g. photoresist or nitride layers · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title