Semiconductor laser element and method of making semiconductor laser device

Patent metadata

Field	Value
Publication number	US-9692204-B2
Application number	US-201615264012-A
Country	US
Kind code	B2
Filing date	Sep 13, 2016
Priority date	Sep 15, 2015
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. The current constriction part causes a current to concentrate and flow to a particular area of the active layer. The first electrode or the second electrode is joined to a sub-mount. In one embodiment, the location of the current constriction part in a chip width direction is between the center of one of the first and second electrodes, which is joined to the sub-mount, and the center of the other electrode, which is not joined to the sub-mount, when viewed in the chip width direction.

First claim

What is claimed is:

1. A semiconductor laser element comprising:
a semiconductor chip, the semiconductor chip including:
a substrate having four side faces, a top face and a bottom face, with two side faces of the four side faces being inclined side surfaces which face each other in a first direction, and another two side faces being vertical side surfaces which face each other in a second direction, the second direction being perpendicular to the first direction, each said vertical side surface having a parallelogram shape;
a semiconductor layer formed on one of the top and bottom faces of the substrate, the semiconductor layer having a multi-layer structure including at least an active layer;
a first electrode formed on the other of the top and bottom faces of the substrate;
a second electrode formed on the semiconductor layer, one of the first electrode and the second electrode being joined to a sub-mount when the semiconductor laser element is assembled in a laser device; and
a current constriction part formed in the semiconductor layer, the current constriction part being configured to cause a current to concentrate and flow to a particular area of the active layer, a location of the current constriction part in the first direction being offset from a center of one of the top and bottom faces of the chip, on which one of the first and second electrodes to be joined to the sub-mount is formed, toward a center of the other of the top and bottom faces of the chip, when viewed in the first direction.

2. The semiconductor laser element according to claim 1 , wherein the location of the current constriction part in the first direction is on a line that extends through a center of gravity of the semiconductor chip when viewed in the first direction.

3. The semiconductor laser element according to claim 1 , wherein the location of the current constriction part in the first direction is on a line that extends through a center of one of the top and bottom faces of the chip on which one of the first and second electrodes not to be joined to the sub-mount is formed when viewed in the first direction.

4. The semiconductor laser element according to claim 1 , wherein the current constriction part has a ridge structure.

5. The semiconductor laser element according to claim 4 , wherein the current constriction part has a ridge structure that appears on an outer surface of the semiconductor chip.

6. The semiconductor laser element according to claim 5 , wherein the current constriction part has a plurality of ridges arranged in the first direction, and a center position of said plurality of ridges in the first direction is the location of the current constriction part in the first direction.

7. The semiconductor laser element according to claim 4 , wherein the current constriction part has a ridge structure that is embedded in the semiconductor chip.

8. The semiconductor laser element according to claim 7 , wherein the current constriction part has a plurality of ridges arranged in the first direction, and a center position of said plurality of ridges in the first direction is the location of the current constriction part in the first direction.

9. The semiconductor laser element according to claim 7 , wherein the current constriction part has a single ridge, and a position of ridge in the first direction is the location of the current constriction part in the first direction.

10. The semiconductor laser element according to claim 1 , wherein the first electrode is an electrode not to be joined to the sub-mount, and the second electrode is an electrode to be joined to the sub-mount.

11. The semiconductor laser element according to claim 1 , wherein the first direction is a width direction of the substrate.

12. The semiconductor laser element according to claim 1 , wherein the location of the current constriction part in the first direction is between the center of one of the top and bottom faces of the chip, on which one of the first and second electrodes to be joined to the sub-mount is formed, and the center of the other of the top and bottom faces of the chip, when viewed in the first direction.

13. A method of manufacturing a semiconductor laser device comprising:
preparing a semiconductor laser element according to claim 1 ;
placing the semiconductor laser element on the sub-mount such that one of the first and second electrodes contacts or faces the sub-mount; and
applying a force onto the semiconductor laser element in a direction perpendicular to a joining plane between said one of the first and second electrodes and the sub-mount so as to join the semiconductor laser element to the sub-mount.

14. A method of manufacturing a semiconductor laser element, comprising:
preparing a substrate, the substrate having four side faces, a top face and a bottom face, with two side faces of the four side faces being inclined side surfaces which face each other in a first direction, and the other two side faces being vertical side surfaces which face each other in a second direction, the second direction being perpendicular to the first direction, each said vertical side surface having a parallelogram shape;
forming a semiconductor layer on one of the top and bottom faces of the substrate, the semiconductor layer having a multi-layer structure including at least an active layer;
forming a first electrode formed on the other of the top and bottom faces of the substrate;
forming a second electrode formed on the semiconductor layer; and
forming a current constriction part formed in the semiconductor layer, the current constriction part being configured to cause a current to concentrate and flow to a particular area of the active layer, a location of the current constriction part in the first direction being offset from a center of one of the top and bottom faces of the chip, on which one of the first and second electrodes to be joined to the sub-mount is formed, toward a center of the other of the top and bottom faces of the chip, when viewed in the first direction.

15. A method of manufacturing a semiconductor laser device comprising:
preparing a semiconductor laser element, the semiconductor laser element including a substrate, a semiconductor layer, a first electrode, a second electrode, and a current constriction part, the substrate having four side faces, a top face and a bottom face, with two side faces of the four side faces being inclined side surfaces which face each other in a first direction, and the other two side faces being vertical side surfaces which face each other in a second direction, the second direction being perpendicular to the first direction, each said vertical side surface having a parallelogram shape, the semiconductor layer being formed on one of the top and bottom faces of the substrate, the semiconductor layer having a multi-layer structure including at least an active layer, the first electrode being formed on the other of the top and bottom faces of the substrate, the second electrode being formed on the semiconductor layer, the current constriction part being formed in the semiconductor layer, the current constriction part being configured to cause a current to concentrate and flow to a particular area of the active layer;
placing the semiconductor laser element on a sub-mount such that one of the first and second electrodes contacts or faces the sub-mount; and
applying a force onto the semiconductor laser element in a direction perpendicular to a joining plane between said one of the first and second electrodes and the sub-mount from above the current constriction part, so as to join the semiconduct

Assignees

• Ushio Electric Inc

Inventors

• Hagimoto Masato
• Miyamoto Shintaro
• Kozu Koichi

Classifications

• H01S5/3202 Primary

  grown on specifically orientated substrates, or using orientation dependent growth · CPC title

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/02212

  Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis · CPC title

• H01S5/4031

  Edge-emitting structures · CPC title

• H01S5/227

  Buried mesa structure {; Striped active layer} · CPC title