Semiconducting polymer and organic electroluminescence device thereof

Patent metadata

Field	Value
Publication number	US-9691984-B2
Application number	US-201213979644-A
Country	US
Kind code	B2
Filing date	Jan 11, 2012
Priority date	Jan 12, 2011
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A semiconducting polymer and electronic devices comprising such polymer, in which the polymer has one or more repeat units, a first of the repeat units having the structure

wherein R 12 to R 17 independently comprise H or a polyether group having at least five ethoxy repeat units, and in which at least one of R 12 to R 17 has a polyether group.

First claim

The invention claimed is:

1. A light emitting device comprising a light emitting layer comprising a semiconducting polymer having one or more repeat units, a first of the repeat units comprising the structure

wherein R 12 to R 17 independently comprise H or a polyether group having five to fifteen ethoxy repeat units, wherein at least one of R 12 to R 17 comprises the polyether group.

2. A light emitting device according to claim 1 , wherein the first repeat unit comprises at least 0.01% of the repeat units of the polymer.

3. A light emitting device according to claim 2 , wherein the first repeat unit comprises at least 5% of the repeat units of the polymer.

4. A light emitting device according to claim 1 , wherein the polyether groups comprise substituted polyethylene glycol groups.

5. A light emitting device according to claim 4 , wherein the polyether groups are substituted by C 1 to C 5 straight, branched, or cyclic alkyl, alkenyl, or alkynyl carbon chains.

6. A light emitting device according to claim 1 , wherein the polymer comprises fluorene repeat units.

7. A light emitting device according to claim 1 , wherein R 12 , R 14 , R 15 and R 17 consist of H and at least one of R 13 and R 16 comprise the polyether group.

8. A light emitting device according to claim 1 , wherein R 13 and R 16 consist of H and at least one of R 12 , R 14 , R 15 , and R 17 comprise the polyether group.

9. A light emitting device according to claim 1 , wherein R 14 and R 15 consist of H and at least one of R 12 , R 13 , R 16 and R 17 comprise the polyether group.

10. A light emitting device according to claim 1 , wherein at least four of R 12 to R 17 comprise the polyether group.

11. A light emitting device according to claim 1 , wherein the polyether group is terminated by a terminating group selected from optionally substituted straight, branched, or cyclic C 1 to C 10 alkyl, alkenyl, or alkynyl carbon chains.

12. A light emitting device according to claim 11 , wherein the polyether group is terminated by a terminating group comprising a methyl group or an ethyl group.

13. A light emitting device according to claim 1 , wherein the polyether group is joined to the repeat units by means of a linker group.

14. A light emitting device according to claim 13 , wherein the linker group comprises optionally substituted straight, branched, or cyclic C 1 to C 10 alkyl, alkenyl, or alkynyl chains.

15. A light emitting device according to claim 13 , wherein the linker group comprises optionally substituted straight, branched, or cyclic C 1 to C 5 alkyl, alkenyl, or alkynyl chains.

16. A light emitting device according to claim 13 , wherein the linker groups comprise methyl, ethyl, or propyl groups.

17. A light emitting device according to claim 1 , further comprising repeat units comprising hole transport moieties wherein some or all of the hole transport moieties are substituted with a polyether group.

18. A light emitting device according to claim 1 , wherein the light emitting layer comprises a composition comprising the semiconducting polymer and a polyether compound.

19. A light emitting device according to claim 1 , wherein the light emitting layer further comprises a polyether compound.

20. A light emitting device according to claim 1 , further comprising at least one of a hole transport layer and an electron transport layer adjacent the light emitting layer, wherein the hole transport layer and/or the electron transport layer does not comprise a polyether substituted material.

21. A light emitting device according to claim 1 , wherein the light emitting layer further comprises a phosphorescent host.

22. A composition comprising:
a semiconducting polymer having one or more repeat units, a first of the repeat units comprising the structure:

wherein R 12 to R 17 independently comprise H or a polyether group having five to fifteen ethoxy repeat units, wherein at least one of R 12 to R 17 comprises the polyether group, and
one or more phosphorescent hosts.

23. A method for manufacturing an electronic device comprising forming a light emitting device comprising a light emitting layer comprising a semiconducting polymer having one or more repeat units, a first of the repeat units comprising the structure

wherein R 12 to R 17 independently comprise H or a polyether group having five to fifteen ethoxy repeat units, wherein at least one of R 12 to R 17 comprises the polyether group, comprising applying a solution comprising the semiconducting polymer to a substrate.

24. A method according to claim 23 , wherein the solution is applied by a solution processing technique.

Assignees

• Middleton Helen
• Cambridge Display Tech Ltd
• Sumitomo Chemical Co

Inventors

• Middleton Helen

Classifications

• C08G2261/95

  Use in organic luminescent diodes · CPC title

• C08G2261/52

  Luminescence · CPC title

• C08G2261/1526

  of Os, Ir, Pt, Ru, Rh or Pd · CPC title

• C08G2261/312

  Non-condensed aromatic systems, e.g. benzene · CPC title

• C08G2261/3245

  containing nitrogen and oxygen as heteroatoms · CPC title