Method for manufacturing light emitting device with preferable alignment precision when transferring substrates

Patent metadata

Field	Value
Publication number	US-9691948-B2
Application number	US-201615001261-A
Country	US
Kind code	B2
Filing date	Jan 20, 2016
Priority date	Sep 4, 2015
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A method for manufacturing a light emitting device is provided. Multiple epitaxial structures and multiple bonding pads formed thereon are formed on a growth substrate. A first adhesive layer is formed on the growth substrate, wherein the first adhesive layer encapsulates the epitaxial structures and the bonding pads. A first substrate is provided on the first adhesive layer. The growth substrate is removed, so as to expose the epitaxial structures and the first adhesive layer. A second substrate and a second adhesive layer disposed thereon are provided, wherein the epitaxial structures are adhered on the second substrate by the second adhesive layer. The first adhesive layer and the first substrate are removed.

First claim

What is claimed is:

1. A method for manufacturing a light emitting device, comprising:
forming a plurality of epitaxial structures on a growth substrate, wherein the epitaxial structures are distributively disposed on the growth substrate and expose a part of the growth substrate;
forming a plurality of bonding pads on the epitaxial structures;
forming a first adhesive layer on the growth substrate, wherein the first adhesive layer encapsulates the epitaxial structures and the bonding pads;
providing a first substrate on an upper surface of the first adhesive layer, wherein the first substrate is adhered on the growth substrate by the first adhesive layer;
removing the growth substrate, so as to expose a bottom surface of each of the epitaxial structures and a lower surface of the first adhesive layer opposite to the upper surface;
providing a second substrate and a second adhesive layer disposed on the second substrate, wherein the second adhesive layer is located between the first substrate and the second substrate, and the bottom surface of each of the epitaxial structures is adhered on the second substrate by the second adhesive layer;
removing the first adhesive layer and the first substrate;
after removing the first adhesive layer and the first substrate, bonding the bonding pads to a plurality of pads of an external circuit by a thermal compression process; and
removing the second adhesive layer and the second substrate, so as to expose the bottom surfaces of the epitaxial structures.

2. The method for manufacturing the light emitting device of claim 1 , wherein while forming the first adhesive layer on the growth substrate, the first adhesive layer covers the part of the growth substrate exposed by the epitaxial structures, and fills gaps between the epitaxial structures.

3. The method for manufacturing the light emitting device of claim 1 , wherein the step of forming the epitaxial structures on the growth substrate comprises:
forming an epitaxial film on the growth substrate; and
patterning the epitaxial film, so as to define the epitaxial structures, wherein each of the epitaxial structures comprises a first-type semiconductor layer, an active layer and a second-type semiconductor layer, the active layer is located between the first-type semiconductor layer and the second-type semiconductor layer, and the second-type semiconductor layer is located between the active layer and the growth substrate.

4. The method for manufacturing the light emitting device of claim 1 , wherein a thickness of the first adhesive layer is higher than a height of each of the epitaxial structures.

5. The method for manufacturing the light emitting device of claim 1 , wherein the first adhesive layer is formed by stacking at least one layer of an insulation material layer.

6. The method for manufacturing the light emitting device of claim 1 , wherein a method of forming the first adhesive layer on the growth substrate comprises a spin coating method.

7. The method for manufacturing the light emitting device of claim 1 , wherein a method of removing the growth substrate comprises a laser lift-off method.

8. The method for manufacturing the light emitting device of claim 1 , wherein the step of removing the first adhesive layer and the first substrate comprises:
removing the first substrate in a lift-off manner; and
removing the first adhesive layer by a laser ablation, an ultraviolet irradiation, a solution decomposition or a thermal decomposition.

9. The method for manufacturing the light emitting device of claim 1 , wherein the step of removing the second adhesive layer and the second substrate comprises:
removing the second substrate in a lift-off manner; and
removing the second adhesive layer in a wet etching manner.

10. The method for manufacturing the light emitting device of claim 1 , further comprising:
after removing the first adhesive layer and the first substrate, patterning the second adhesive layer by using the epitaxial structures as an etching mask, so that the second adhesive layer and the epitaxial structures are similar patterns in a vertical direction of the second substrate;
bonding the bonding pads on a plurality of pads of an external circuit by a thermal compression process; and
removing the second adhesive layer and the second substrate, so as to expose the bottom surfaces of the epitaxial structures.

11. The method for manufacturing the light emitting device of claim 1 , further comprising:
while removing the growth substrate, removing a part of the epitaxial structures and the corresponding bonding pads formed thereon.

12. The method for manufacturing the light emitting device of claim 1 , further comprising:
after providing the first substrate on the upper surface of the first adhesive layer, providing a mask at a side of the growth substrate away from the epitaxial structures; and
while removing the growth substrate, removing a part of the epitaxial structures and the corresponding bonding pads formed thereon.

13. The method for manufacturing the light emitting device of claim 1 , wherein a maximum peak current density of an external quantum efficiency curve of each of the epitaxial structures is below 2 A/cm 2 .

14. The method for manufacturing the light emitting device of claim 1 , wherein a defect density of each of the epitaxial structures is less than 10 8 /cm 2 .

15. A method for manufacturing a light emitting device, comprising:
forming a plurality of epitaxial structures on a growth substrate, wherein the epitaxial structures are distributively disposed on the growth substrate and expose a part of the growth substrate, wherein a maximum peak current density of an external quantum efficiency curve of each of the epitaxial structures is below 2 A/cm 2 ;
forming a plurality of bonding pads on the epitaxial structures;
forming a first adhesive layer on the growth substrate, wherein the first adhesive layer encapsulates the epitaxial structures and the bonding pads;
providing a first substrate on an upper surface of the first adhesive layer, wherein the first substrate is adhered on the growth substrate by the first adhesive layer;
removing the growth substrate, so as to expose a bottom surface of each of the epitaxial structures and a lower surface of the first adhesive layer opposite to the upper surface;
providing a second substrate and a second adhesive layer disposed on the second substrate, wherein the second adhesive layer is located between the first substrate and the second substrate, and the bottom surface of each of the epitaxial structures is adhered on the second substrate by the second adhesive layer; and
removing the first adhesive layer and the first substrate.

16. The method for manufacturing the light emitting device of claim 15 , wherein while forming the first adhesive layer on the growth substrate, the first adhesive layer covers the part of the growth substrate exposed by the epitaxial structures, and fills gaps between the epitaxial structures.

17. The method for manufacturing the light emitting device of claim 15 , wherein a thickness of the first adhesive layer is higher than a height of each of the epitaxial structures.

18. The method for manufacturing the light emitting device of claim 15 , wherein the first adhesive layer is formed by stacking at least one layer of an insulation material layer.

19. The method for manufacturing the light emitting device of claim 15 , further comprising:
after removing the first adhesive layer and the first substrate, patterni

Assignees

• Playnitride Inc

Inventors

• Lin Tzu-Yang
• Lai Yu-Hung
• Lo Yu-Yun

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L2933/0033

  Electricity · mapped topic

• H01L33/54 Primary

  Electricity · mapped topic

• H01L33/0095

  Electricity · mapped topic

• H01L2933/0016

  Electricity · mapped topic