Four junction inverted metamorphic multijunction solar cell with two metamorphic layers

Patent metadata

Field	Value
Publication number	US-9691929-B2
Application number	US-201414243732-A
Country	US
Kind code	B2
Filing date	Apr 2, 2014
Priority date	Nov 14, 2008
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A multijunction solar cell including an upper first solar subcell having a first band gap; a second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap; a first graded interlayer adjacent to the second solar subcell; the first graded interlayer having a third band gap greater than the second band gap; and a third solar subcell adjacent to the first graded interlayer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell. A second graded interlayer is provided adjacent to the third solar subcell; the second graded interlayer having a fifth band gap greater than the fourth band gap; and a lower fourth solar subcell is provided adjacent to the second graded interlayer, the lower fourth subcell having a sixth band gap smaller than the fourth band gap such that the fourth subcell is lattice mismatched with respect to the third subcell.

First claim

The invention claimed is:

1. A multijunction solar cell comprising:
an upper first solar subcell having a first band gap, the upper first solar subcell including an InGaP emitter layer and an InGaP base layer;
a second solar subcell below the first solar subcell and having a second band gap smaller than the first band gap, a base and emitter of the second solar subcell forming a radiation hard heterojunction, wherein the emitter layer of the second solar subcell is composed of InGaP and the base layer of the second solar subcell is composed of GaAs;
a first upper barrier layer below the second solar subcell, the first upper barrier layer being composed of InGaP;
a first graded interlayer, composed of InGaAlAs, disposed below and adjacent to the first upper barrier layer, wherein the first graded interlayer has a third band gap greater than the second band gap, and wherein the band gap of the first graded interlayer remains constant at 1.5 eV throughout its thickness;
a first lower barrier layer disposed below and adjacent to the first graded interlayer, the first lower barrier layer being composed of InGaP and having a composition different from that of the first upper barrier layer;
a third solar subcell below the first lower barrier layer, the third subcell having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell, a base and emitter of the third solar subcell forming a radiation hard heterojunction, wherein the emitter layer of the third solar subcell is composed of InGaP and the base layer of the third solar subcell is composed of InGaAs, and wherein the first graded interlayer provides a gradual transition in lattice constant from the second solar subcell to the third solar subcell;
a second upper barrier layer below the third solar subcell;
a second graded interlayer, composed of InGaAlAs, disposed below and adjacent to the second upper barrier layer, wherein the second graded interlayer has a fifth band gap greater than the fourth band gap, and wherein the band gap of the second graded interlayer remains constant at 1.1 eV throughout its thickness;
a second lower barrier layer disposed below and adjacent to the second graded interlayer; and
a lower fourth solar subcell below the second lower barrier layer, wherein the fourth subcell has a sixth band gap smaller than the fourth band gap such that the fourth solar subcell is lattice mismatched with respect to the third solar subcell, wherein an emitter layer and base layer of the fourth solar subcell are composed of InGaAs, and wherein the second graded interlayer provides a gradual transition in lattice constant from the third solar subcell to the lower fourth solar subcell,
wherein each of the first upper barrier layer and the first lower barrier layer has a respective-composition different from the first graded interlayer, wherein each of the second upper barrier layer and the second lower barrier layer has a composition different from the second graded interlayer, and wherein the first upper barrier layer, the first lower barrier layer, the second upper barrier layer and the second lower barrier layer collectively help prevent threading dislocations from propagating into adjacent solar subcells in a direction of growth of the solar cell and in a direction opposite the direction of growth.

2. The multijunction solar cell of claim 1 , wherein the second upper barrier layer is composed of GaInP.

3. The multijunction solar cell of claim 1 , wherein the first graded interlayer is compositionally graded to lattice match the second solar subcell on one side and the third solar subcell on the other side.

4. The multijunction solar cell of claim 1 , wherein the second graded interlayer is compositionally graded to lattice match the third solar subcell on one side and the fourth solar subcell on the other side.

5. The multijunction solar cell of claim 1 , wherein said first graded interlayer is composed of III-V compound semiconductors subject to the constraints of having the in-plane lattice parameter greater or equal to that of the second solar subcell and less than or equal to that of the third solar subcell, and having a band gap energy greater than that of the second solar subcell and of the third solar subcell.

6. The multijunction solar cell of claim 1 , wherein the fourth solar subcell has a band gap in the range of 0.6 to 0.8 eV, the third solar subcell has a band gap in the range of 0.9 to 1.1 eV, the second solar subcell has a band gap in the range of 1.35 to 1.45 eV and the first solar subcell has a band gap in the range of 1.8 to 2.1 eV.

7. A method of manufacturing a solar cell comprising:
providing a first substrate;
depositing over the first substrate a first sequence of layers of semiconductor material forming a first solar subcell and a second solar subcell;
depositing over the first sequence of layers a first barrier layer, the first barrier layer being composed of InGaP;
depositing over the first barrier layer a first graded interlayer composed of InGaAlAs and having a band gap that remains constant throughout its thickness at 1.5 eV, wherein the first graded interlayer has a composition different from the first barrier layer;
depositing over the first graded interlayer a second barrier layer having a composition different from the first graded interlayer, the second barrier layer being composed of InGaP and having a composition different from that of the first barrier layer;
depositing over the second barrier layer a second sequence of layers of semiconductor material forming a third solar subcell;
depositing over the second sequence of layers a third barrier layer;
depositing over the third barrier layer a second graded interlayer composed of InGaAlAs and having a band gap that remains constant throughout its thickness at 1.1 eV, wherein the second graded interlayer has a composition different from the third barrier layer;
depositing over the second graded interlayer a fourth barrier layer;
depositing over the fourth barrier layer a third sequence of layers of semiconductor material forming a fourth solar subcell;
mounting a surrogate substrate over the third sequence of layers; and
removing the first substrate;
wherein the first, second, third and fourth barrier layers help prevent threading dislocations from propagating into adjacent solar subcells.

8. The method of claim 7 , wherein the first graded interlayer is compositionally graded to lattice match the second solar subcell on one side and the third solar subcell on the other side.

9. The method of claim 7 , wherein the second graded interlayer is compositionally graded to lattice match the third solar subcell on one side and the fourth solar subcell on the other side.

10. A multijunction solar cell comprising:
an upper first solar subcell having a first band gap in the range of 1.8 to 2.1 eV;
a second solar subcell below the first solar subcell and having a second band gap in the range of 1.35 to 1.45 eV;
a first barrier layer below the second solar subcell, the first barrier layer being composed of InGaP;
a first graded interlayer, composed of InGaAlAs, disposed below and adjacent the first barrier layer, wherein the first graded interlayer has a third band gap greater than the second band gap, and wherein the band gap of the first graded interlayer remains constant at 1.5 eV throughout its thickness;
a third solar subcell below the first graded interlayer, the third subcell having a fourth band gap in the range of 0.9 to 1.1 eV such that the third subcell is lattice mismatched with respect to the second solar subcell;
a second barrier layer below the third solar subcell, the sec

Assignees

• Solaero Tech Corp

Inventors

• Cornfeld Arthur
• Cho Benjamin

Classifications

• H01L31/1892

  Electricity · mapped topic

• H01L31/1844

  Electricity · mapped topic

• Y02P70/521

  Cross-Sectional Technologies · mapped topic

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/078

  Electricity · mapped topic