Semiconductor device and method for manufacturing same
US-9177856-B2 · Nov 3, 2015 · US
Semiconductor device
US9691870B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9691870-B2 |
| Application number | US-201514959944-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 4, 2015 |
| Priority date | Dec 8, 2014 |
| Publication date | Jun 27, 2017 |
| Grant date | Jun 27, 2017 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the electrode is at least 1 μm.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a semiconductor substrate, and an electrode formed from an alloy containing aluminum, silicon and titanium, wherein a content of the silicon in the electrode is from 0.5 to 1.0% by weight relative to a total weight of the electrode, a content of the titanium in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and a thickness of the electrode is at least 1 μm. 2. The semiconductor device according to claim 1 , wherein an average particle size of metal crystals contained in the electrode is not more than 1 μm. 3. The semiconductor device according to claim 1 , wherein an average particle size of metal crystals contained in the electrode is not more than 0.8 μm. 4. The semiconductor device according to claim 1 , wherein the content of the titanium in the electrode is from 0.8 to 2.0% by weight relative to the total weight of the electrode. 5. The semiconductor device according to claim 2 , wherein the content of the titanium in the electrode is from 0.8 to 2.0% by weight relative to the total weight of the electrode. 6. The semiconductor device according to claim 3 , wherein the content of the titanium in the electrode is from 0.8 to 2.0% by weight relative to the total weight of the electrode. 7. The semiconductor device according to claim 1 , wherein at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum. 8. The semiconductor device according to claim 2 , wherein at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum. 9. The semiconductor device according to claim 3 , wherein at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum. 10. The semiconductor device according to claim 4 , wherein at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum. 11. The semiconductor device according to claim 5 , wherein at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum. 12. The semiconductor device according to claim 6 , wherein at least a portion of the silicon contained in the electrode is in a state not dissolved in the aluminum. 13. The semiconductor device according to claim 1 , wherein a content of the aluminum in the electrode is from 96.0 to 98.7% by weight relative to the total weight of the electrode. 14. The semiconductor device according to claim 1 , wherein the thickness of the electrode is at least 1 μm and no more than 10 μm. 15. The semiconductor device according to claim 14 , wherein the thickness of the electrode is at least 3 μm. 16. The semiconductor device according to claim 1 , wherein the thickness of the electrode is at least 3 μm and no more than 8 μm. 17. The semiconductor device according to claim 1 , wherein the thickness of the electrode is at least 4 μm and no more than 6 μm. 18. A semiconductor device comprising: a semiconductor substrate, and an electrode formed from an alloy containing aluminum, silicon and titanium, wherein a content of the silicon in the electrode is from 0.5 to 1.0% by weight relative to a total weight of the electrode, a content of the titanium in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, a content of the aluminum in the electrode is from 96.0 to 98.7% by weight relative to the total weight of the electrode, and a thickness of the electrode is at least 1 μm and no more than 10 μm. 19. The semiconductor device according to claim 18 , wherein the thickness of the electrode is at least 3 μm.
Assignees
Inventors
Classifications
containing at least 2.6% of one or more of the elements: tin, lead, antimony, bismuth, cadmium, and titanium · CPC title
Electricity · mapped topic
- H01L29/456Primary
Electricity · mapped topic
Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes · CPC title
having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9691870B2 cover?
- A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the ele…
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L29/456. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 27 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).