Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component

Patent metadata

Field	Value
Publication number	US-9691815-B2
Application number	US-201314434760-A
Country	US
Kind code	B2
Filing date	Oct 1, 2013
Priority date	Oct 9, 2012
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

In at least one embodiment of the method, said method includes the following steps: A) producing radiation-active islands ( 4 ) having a semiconductor layer sequence ( 3 ) on a growth substrate ( 2 ), wherein the islands ( 4 ) each comprise at least one active zone ( 33 ) of the semiconductor layer sequence ( 3 ), and an average diameter of the islands ( 4 ), as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive, B) producing a separating layer ( 5 ) on a side of the islands ( 4 ) facing the growth substrate ( 2 ), wherein the separating layer ( 5 ) surrounds the islands ( 4 ) all around, as viewed in a top view of the growth substrate ( 2 ), C) attaching a carrier substrate ( 6 ) to a side of the islands ( 4 ) facing away from the growth substrate ( 2 ), and D) detaching the growth substrate ( 2 ) from the islands ( 4 ), wherein at least a part of the separating layer ( 5 ) is destroyed and/or at least temporarily softened during the detachment.

First claim

The invention claimed is:

1. A method for producing an optoelectronic semiconductor component comprising the steps of:
A) producing radiation-active islands having a semiconductor layer sequence on a growth substrate, wherein the islands each comprise at least one active zone of the semiconductor layer sequence, and an average diameter of the islands, as viewed in a top view of the growth substrate, amounts to between 50 nm and 10 μm inclusive,
B) producing at least one separating layer on a side of the islands facing the growth substrate, wherein the separating layer surrounds the islands all around, as viewed in a top view of the growth substrate,
C) attaching a carrier substrate to a side of the islands facing away from the growth substrate, and
D) detaching the growth substrate from the islands, wherein at least a part of the separating layer is destroyed and/or at least temporarily softened during the detachment,
wherein after steps A) and B) and prior to step C) an electrical contact layer for contacting a p-type layer of the semiconductor layer sequence is applied over the whole area of the p-type layer,
wherein the electrical contact layer is produced from a transparent, conductive oxide and is integrally formed on the islands, and
wherein the electrical contact layer is removed from upper sides of the islands.

2. The method according to claim 1 ,
wherein in step D) the detaching is performed by means of laser radiation so that at least a part of the separating layer is destroyed and/or at least temporarily softened by the laser radiation.

3. The method according to claim 1 ,
wherein the islands comprise a sacrificial layer on a side facing the growth substrate,
wherein the sacrificial layer is a part of the semiconductor layer sequence and acts in an absorbing manner for laser radiation.

4. The method according to claim 1 ,
wherein step A) follows step B) and precedes step C).

5. The method according to claim 1 ,
wherein a region between adjacent islands is filled with an electrically insulating filling compound and the carrier substrate is applied to a side of the islands facing away from the growth substrate, wherein the filling compound and the carrier substrate are mechanically flexible.

6. The method according to claim 1 ,
wherein a buffer layer is produced on the growth substrate,
wherein the buffer layer is a continuous layer which is unstructured as viewed in a top view,
wherein the separating layer is produced on a side of the buffer layer facing away from the growth substrate,
wherein the buffer layer is completely removed at the latest in step D) so that adjacent islands are no longer connected together via a semiconductor material of the semiconductor layer sequence or of the buffer layer, and
wherein in step D) the detaching is performed by means of laser radiation and at least a part of the separating layer is destroyed and/or at least temporarily softened by the laser radiation.

7. The method according to claim 6 ,
wherein the separating layer is a masking layer having a multiplicity of openings,
wherein the islands grow out of these openings.

8. The method according to claim 7 ,
wherein the separating layer is located directly on the growth substrate or directly on a side of the buffer layer facing away from the growth substrate.

9. The method according to claim 1 ,
wherein step B) follows step A) and precedes step C).

10. The method according to claim 9 ,
wherein prior to step C) the separating layer is covered—as viewed in a top view—at least in places by an electrical contact layer which is configured for supplying the islands with current,
wherein the electrical contact layer touches the separating layer.

11. The method according to claim 1 ,
wherein the active zone surrounds an n-type layer of the islands all around at least on a peripheral surface, as viewed in a top view.

12. The method according to claim 1 ,
wherein the islands are grown as columns,
wherein a quotient of an average height of the islands and an average diameter of the islands amounts to between 1 and 100 inclusive.

13. The method according claim 1 ,
wherein a region between adjacent islands is filled with an electrically insulating filling compound,
wherein an upper side of the upper sides of the islands facing away from the growth substrate is, prior to step C), conical or pyramid-shaped,
wherein the upper side protrudes beyond the filling compound and protrudes into an electrical contact layer, and
wherein the carrier substrate is attached to the islands via the electrical contact layer.

14. The method according to claim 13 ,
wherein the filling compound and the carrier substrate are mechanically flexible.

15. An optoelectronic semiconductor component,
which is produced by means of a method according to claim 1 ,
wherein the separating layer is located at least partly directly on the islands and/or on an electrical contact layer for contacting a p-type layer of the semiconductor layer sequence and/or on a filling compound which is arranged between adjacent islands.

16. The optoelectronic semiconductor component according to claim 15 , which is configured for a display,
wherein individual islands or groups of islands can be electrically actuated independently of each other so that pixels of the display are formed by the islands or groups of islands.

17. The optoelectronic semiconductor component according to claim 15 ,
wherein a region between adjacent islands is filled with an electrically insulating filling compound which is mechanically flexible, and
wherein the carrier substrate is formed as a mechanically flexible carrier substrate.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Mandl Martin
• Strassburg Martin
• Koelper Christopher
• Pfeuffer Alexander F
• Rode Patrick

Classifications

• H10W90/00

  Package configurations · CPC title

• H01L2924/0002

  Electricity · mapped topic

• H01L33/0079

  Electricity · mapped topic

• H01L33/24

  Electricity · mapped topic

• H01L33/18

  Electricity · mapped topic