Semiconductor device including transistors and diodes and a first line extending between the transistors and diodes

Patent metadata

Field	Value
Publication number	US-9691757-B2
Application number	US-201514752880-A
Country	US
Kind code	B2
Filing date	Jun 27, 2015
Priority date	Jul 8, 2014
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

Reduction of the speed of switching between the drain electrodes of transistors and the cathode electrodes of diodes due to the inductances of lines coupling them is inhibited. Transistors and diodes are formed over a substrate. The transistors and the diodes are arranged in a first direction. The substrate also includes a first line, first branch lines, and second branch lines formed thereover. The first line extends between the transistors and the diodes. The first branch lines are formed to branch from the first line in a direction to overlap the transistors and are coupled to the transistors. The second branch lines are formed to branch from the first line in a direction to overlap the diodes and are coupled to the diodes.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
a plurality of transistors formed on a transistor region of the substrate;
a plurality of diodes formed on a diode region of the substrate, the transistors and the diodes being arranged in a first direction,
a first line formed over the substrate and extending between the transistors and the diodes;
a plurality of first branch lines extending from the first line in the first direction to form a drain electrode of the transistors;
a plurality of second branch lines extending from the first line in the first direction to form an anode electrode of the diodes; and
an insulating separation layer formed in the substrate under the first line and separating the transistor region and the diode region.

2. The semiconductor device according to claim 1 ,
wherein drains and sources of the transistors are alternately disposed in a direction along the first line,
wherein the first branch lines are disposed spaced apart from one another,
wherein anodes and cathodes of the diodes are alternately disposed in a direction along the first line, and
wherein the second branch lines are disposed spaced apart from one another.

3. The semiconductor device according to claim 2 , further comprising:
a second line extending, on a side opposite to the first line across the transistors, in the direction in which the first line extends;
a plurality of third branch lines extending from the second line in the first direction to form a source electrode of the transistors, the third branch lines being disposed to oppose the first branch lines;
a third line extending, on a side opposite to the first line across the diodes, in the direction in which the first line extends; and
a plurality of fourth branch lines extending from the third line in the first direction to form a cathode electrode of the diodes, the fourth branch lines being disposed to oppose the second branch lines.

4. The semiconductor device according to claim 3 ,
wherein the first branch lines are coupled to the drains of the transistors,
wherein the third branch lines are coupled to the sources of the transistors,
wherein the second branch lines are coupled to the anodes of the diodes, and
wherein the fourth branch lines are coupled to the cathodes of the diodes.

5. The semiconductor device according to claim 3 ,
wherein, in the first direction, the second line, the transistors, the first line, the diodes, the third line, the diodes, the first line, and the transistors are repeatedly disposed in this order, and
wherein the fourth branch lines extend from two sides of the third line.

6. The semiconductor device according to claim 3 ,
wherein the substrate is rectangular,
wherein a first side and a second side opposing the first side of the substrate extend in the first direction, and
the semiconductor device further comprising:
a first lead terminal opposing the first side;
a second lead terminal opposing the second side;
a first coupling member coupling the first line to the first lead terminal; and
a second coupling member coupling the third line to the second lead terminal.

7. The semiconductor device according to claim 6 , further comprising:
a gate line extending along the second side of the substrate and coupled to the gate electrodes of the transistors;
a third lead terminal opposing the second side of the substrate; and
a third coupling member coupling the gate line to the third lead terminal.

8. The semiconductor device according to claim 6 ,
wherein the substrate includes:
a semiconductor substrate doped with impurities and having a first surface and a second surface opposing the first surface;
a compound semiconductor layer formed over the first surface of the semiconductor substrate; and
a buried contact buried in the compound semiconductor layer, the buried contact having a lower portion coupled to the semiconductor substrate and an upper surface coupled to the second line, and

wherein the semiconductor device further comprises a substrate mounting part supporting the second surface, the substrate mounting part having at least a conductive surface contacting the second surface of the semiconductor substrate.

9. The semiconductor device according to claim 1 , wherein the first line extends in a second direction between the transistors and the diodes, the second direction being perpendicular to the first direction.

10. The semiconductor device according to claim 1 , wherein the plurality of first branch lines extend in the first direction from a first side of the first line, and the plurality of second branch lines extend in the first direction from a second side of the first line which is opposite the first side.

11. The semiconductor device according to claim 1 , further comprising:
a second line extending in a second direction perpendicular to the first direction; and
a plurality of third branch lines extending in the first direction from the second line to form a source electrode of the transistors.

12. The semiconductor device according to claim 1 , wherein the substrate comprises a buffer layer, a first compound semiconductor layer formed on the buffer layer, and a second compound semiconductor layer formed on the first compound semiconductor layer, and
wherein the insulating separation layer is formed in the first and second compound semiconductor layers.

13. The semiconductor device according to claim 1 , further comprising:
a Schottky metal formed in the substrate under the anode electrode and adjacent to the insulating separation layer.

14. The semiconductor device according to claim 1 , further comprising:
an insulating film formed on a surface of the substrate between the insulating separation layer and the first line.

15. A semiconductor device, comprising:
a substrate;
a plurality of transistors formed on the substrate;
a plurality of diodes formed on the substrate, the transistors and the diodes being arranged in a first direction,
a first line formed over the substrate and extending between the transistors and the diodes;
a plurality of first branch lines extending from the first line in the first direction to form a drain electrode of the transistors;
a plurality of second branch lines extending from the first line in the first direction to form an anode electrode of the diodes;
a second line extending in a second direction perpendicular to the first direction; and
a plurality of third branch lines extending in the first direction from the second line to form a source electrode of the transistors;
a third line extending in the second direction; and

a plurality of fourth branch lines extending in the first direction from the third line to form a cathode electrode of the diodes.

16. A semiconductor device, comprising:
a transistor region comprising a plurality of transistors formed on a substrate;
a diode region comprising a plurality of diodes formed on the substrate;
a first line formed between the transistor region and the diode region;
a plurality of first branch lines extending from the first line into the transistor region to form a drain electrode of the plurality of transistors; and
a plurality of second branch lines extending from the first line into the diode region to form an anode electrode of the plurality of diodes; and
an insulating separation layer formed in the substrate under the first line and separating the transistor region and the diode region.

17. The semiconductor device according to claim 16 , wherein the plurality of first branc

Assignees

• Renesas Electronics Corp

Inventors

• Miura Yoshinao

Classifications

• H10W20/484

  Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10P14/40 Primary

  of conductive or resistive materials · CPC title

• H10D84/811 Primary

  Combinations of field-effect devices and one or more diodes, capacitors or resistors · CPC title

• H10D84/0144

  Manufacturing their gate insulating layers · CPC title