Integrated chip and manufacturing method therefor, and full-color integrated chip and display panel
US-12183868-B2 · Dec 31, 2024 · US
US9691709B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9691709-B2 |
| Application number | US-201514632507-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 26, 2015 |
| Priority date | Feb 26, 2015 |
| Publication date | Jun 27, 2017 |
| Grant date | Jun 27, 2017 |
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Semiconductor device security is provided as follows. A unique identification is generated by randomly forming a plurality of defects in one or more circuit elements of the semiconductor device. This method may yield a semiconductor device which is not susceptible to being replicated or cloned.
Opening claim text (preview).
What is claimed is: 1. An integrated circuit comprising: one or more circuit elements; wherein the one or more circuit elements comprise a plurality of defects formed in the one or more circuit elements to generate an identification uniquely associated with the integrated circuit; wherein the identification is generated by forming the plurality of defects in the one or more circuit elements in a plurality of random locations; wherein at least one of the plurality of defects is formed by a direct e-beam write in a via thereby preventing electrical conductivity there through. 2. The integrated circuit of claim 1 , wherein the plurality of defects prevent operation of the one or more circuit elements. 3. The integrated circuit of claim 1 , wherein the at least one of the plurality of defects comprises contamination deposited in the via. 4. The integrated circuit of claim 3 , wherein the contamination comprises a carbon layer. 5. The integrated circuit of claim 1 , wherein the identification is at least one of non-clonable and non-replicable. 6. The integrated circuit of claim 1 , wherein the plurality of detects are located in at least one of a cache area and a core area of the integrated circuit. 7. The integrated circuit of claim 1 , wherein the identification is readable by scanning the semiconductor device. 8. The integrated circuit of claim 7 , wherein scanning the semiconductor device comprises writing a predetermined data pattern into an entirety of memory and then reading the entirety of the memory to detect failed memory bits. 9. The integrated circuit of claim 8 , wherein the identification is represented by each location of the failed memory bits. 10. The integrated circuit of claim 1 , wherein the identification represents a secure encryption key. 11. The integrated circuit of claim 1 , wherein the plurality of defects are formed after via patterning and before subsequent metallization processes. 12. The integrated circuit of claim 1 , wherein the plurality of random locations is associated with a plurality of random numbers produced by a random number generator. 13. The integrated circuit of claim 1 , wherein the direct e-beam write leaves a non-conductive material in the via.
characterised by the properties tested or measured, e.g. structural or electrical properties · CPC title
with high-energy radiation · CPC title
composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title
Making the insulator · CPC title
for non-wireless electrical read out · CPC title
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