Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same

Patent metadata

Field	Value
Publication number	US-9691607-B2
Application number	US-201113639309-A
Country	US
Kind code	B2
Filing date	Apr 7, 2011
Priority date	Apr 7, 2010
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

Disclosed is a process for producing an epitaxial single-crystal silicon carbide substrate by epitaxially growing a silicon carbide film on a single-crystal silicon carbide substrate by chemical vapor deposition. The step of crystal growth in the process comprises a main crystal growth step, which mainly occupies the period of epitaxial growth, and a secondary crystal growth step, in which the growth temperature is switched between a set growth temperature (T 0 ) and a set growth temperature (T 2 ) which are respectively lower and higher than a growth temperature (T 1 ) used in the main crystal growth step. The basal plane dislocations of the single-crystal silicon carbide substrate are inhibited from being transferred to the epitaxial film. Thus, a high-quality epitaxial film is formed.

First claim

The invention claimed is:

1. An epitaxial silicon carbide single crystal substrate, which is an epitaxial silicon carbide single crystal substrate which has been obtained by a process for producing an epitaxial silicon carbide single crystal substrate, comprising forming a silicon carbide film through epitaxial growth on a silicon carbide single crystal substrate having an off-angle of 2° or more and 6° or less by a chemical vapor deposition process,
wherein a crystal growth step of epitaxially growing the silicon carbide film on the substrate includes a crystal growth sub-step involving a temperature switching operation of changing a growth temperature up or down between a lower preset temperature T 0 and a higher preset temperature T 2 with respect to a growth temperature T 1 in a crystal growth main step occupying the majority of an epitaxial growth time,
wherein the basal plane dislocation density of the silicon carbide film is 20 dislocations/cm 2 or less,
wherein a film thickness of the silicon carbide film grown in the crystal growth sub-step is 0.2 μm or more and 1.0 μm or less,
wherein the basal plane dislocation carried over from the silicon carbide single crystal substrate is converted into an edge dislocation in the silicon carbide film grown in the crystal growth sub-step, and
wherein the basal plane dislocation density of the silicon carbide film is no more than 0.3% of an edge dislocation density of the silicon carbide film.

2. An epitaxial silicon carbide single crystal substrate, which is an epitaxial silicon carbide single crystal substrate which has been obtained by a process for producing an epitaxial silicon carbide single crystal substrate, comprising forming a silicon carbide film through epitaxial growth on a silicon carbide single crystal substrate having an off-angle of 2° or more and 6° or less by a chemical vapor deposition process,
wherein a crystal growth step of epitaxially growing the silicon carbide film on the substrate includes a crystal growth sub-step involving a temperature switching operation of changing a growth temperature up or down between a lower preset temperature T 0 and a higher preset temperature T 2 with respect to a growth temperature T 1 in a crystal growth main step occupying the majority of an epitaxial growth time,
wherein the crystal growth sub-step is included in a first half side of the crystal growth step,
wherein the basal plane dislocation density of the silicon carbide film is 20 dislocations/cm 2 or less,
wherein a film thickness of the silicon carbide film grown in the crystal growth sub-step is 0.2 μm or more and 1.0 μm or less,
wherein the basal plane dislocation carried over from the silicon carbide single crystal substrate is converted into an edge dislocation in the silicon carbide film grown in the crystal growth sub-step, and
wherein the basal plane dislocation density of the silicon carbide film is no more than 0.3% of an edge dislocation density of the silicon carbide film.

Assignees

• Aigo Takashi
• Tsuge Hiroshi
• Hoshino Taizo
• Fujimoto Tatsuo
• Katsuno Masakazu
• Nakabayashi Masashi
• Yashiro Hirokatsu
• Nippon Steel & Sumitomo Metal Corp

Inventors

• Aigo Takashi
• Tsuge Hiroshi
• Hoshino Taizo
• Fujimoto Tatsuo
• Katsuno Masakazu
• Nakabayashi Masashi
• Yashiro Hirokatsu

Classifications

• H10P14/3602

  In-situ cleaning · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/2904 Primary

  Silicon carbide · CPC title