Pressure sensor with cover layer

Patent metadata

Field	Value
Publication number	US-9689766-B2
Application number	US-201314432528-A
Country	US
Kind code	B2
Filing date	Sep 24, 2013
Priority date	Oct 1, 2012
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A pressure sensor, comprising: a substrate having a measuring membrane, and an electrically conductive cover layer, which has electrical contact elements and is electrically isolated from the substrate by an insulating layer. The cover layer is divided in such a manner that two independent measurements of the respective resistance between two contact elements are possible in two regions electrically isolated from one another. The regions of the cover layer serve to shield external electromagnetic influences from the sensor elements of the measuring membrane, to detect damage to the measuring membrane, as well as for determining exact temperature.

First claim

The invention claimed is:

1. A pressure sensor, comprising:
a substrate having a measuring membrane formed therein and equipped with sensor elements; and
an electrically conductive cover layer, comprising: low doped polysilicon, wherein:
said cover layer has electrical contact elements and is electrically isolated from said substrate by an insulation layer;
said cover layer is divided in such a manner that respective resistances are measurable in a first region and a second region electrically isolated from one another, and
both said first region and also said second region of the cover layer are provided respectively with at least two contact elements for electrical contacting.

2. The pressure sensor as claimed in claim 1 , wherein:
a first resistive region of said cover layer completely or partially covers said measuring membrane and the first resistive region of the cover layer shields sensor elements of the measuring membrane against external electrical fields;
a second resistive region of said cover layer is so arranged that mechanical reaction of said measuring membrane on it is negligibly small.

3. The pressure sensor as claimed in claim 1 , wherein:
said cover layer and said sensor elements have different dopings.

4. The pressure sensor as claimed in claim 1 , wherein:
said cover layer is deposited on said insulation layer and divided by a lithographic and/or etching method.

5. The pressure sensor as claimed in claim 1 , wherein:
said sensor elements are implanted, highly doped, piezoresistive sensor elements.

6. A method for applying a pressure sensor comprising a substrate, a measuring membrane and a divided, electrically conductive, cover layer, which has two regions and an electrically conductive cover layer, wherein the cover layer has electrical contact elements and is electrically isolated from the substrate by an insulation layer, the cover layer is divided in such a manner that respective resistances are measurable in two regions electrically isolated from one another, wherein both the first region and also the second region of the cover layer are provided respectively with at least two contact elements for electrical contacting, wherein the cover layer is composed at least partially or completely of polysilicon, wherein a first resistive region of the cover layer completely or partially covers the measuring membrane and the first resistive region of the cover layer shields sensor elements of the measuring membrane against external electrical fields, wherein a second resistive region of the cover layer is so arranged that mechanical reaction of the measuring membrane on it is negligibly small and,
the method comprising the steps of:
measuring a resistance of the second resistive region of the cover layer;
determining the temperature of the cover layer from the measured resistance; and
with the assistance of said determined temperature a temperature dependence of a pressure measurement signal of the pressure sensor is compensated.

7. The method as claimed in claim 6 , wherein:
the resistance of the first resistive region of the cover layer is measured and, in the case of a change of the resistance, damage to the cover layer and/or the measuring membrane is indicated.

8. The method as claimed in claim 6 , wherein:
a pressure dependent signal is determined via the optimized′ measuring elements.

Assignees

• Endress Hauser Gmbh Co Kg

Inventors

• Lemke Benjamin
• Ziermann Rene
• Pobering Sebastian
• Roder Ralf

Classifications

• G01L9/0052

  of piezoresistive elements (circuits therefor G01L9/06) · CPC title

• G01L9/065 Primary

  with temperature compensating means (non electric temperature compensating means G01L19/04) · CPC title

• G01L9/0042 Primary

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title

• G01L9/085

  with temperature compensating means (non electric temperature compensating means G01L19/04) · CPC title