Substrate for diaphragm-type resonant MEMS devices, diaphragm-type resonant MEMS device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9688528-B2
Application number	US-201514970933-A
Country	US
Kind code	B2
Filing date	Dec 16, 2015
Priority date	Jul 12, 2013
Publication date	Jun 27, 2017
Grant date	Jun 27, 2017

Abstract

A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R 2 of the film thickness t 2 of the second silicon oxide film with respect to the sum of the film thickness t 1 of the first silicon oxide film and the film thickness t 2 of the second silicon oxide film satisfies the following condition:

0.10 μm≦ t 1 ≦2.00 μm; and

R 2 ≧0.70.

First claim

What is claimed is:

1. A method for producing a diaphragm-type resonant micro electro mechanical system device, the method comprising the steps of:
forming a first silicon oxide film by thermal oxidation or by a process including a heat treatment at 900° C. or above;
forming a second silicon oxide film having a stress with an absolute value of 100 MPa or less;
forming a lower electrode;
forming a piezoelectric film;
forming an upper electrode;
laminating, on a first surface of a silicon substrate, the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order; and
etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching until the first silicon oxide film is exposed so as to form a recess, and thereby forming a diaphragm structure including a diaphragm having the first silicon oxide film and the second silicon oxide film,
wherein when the film thickness of the first silicon oxide film is designated as t 1 , the film thickness of the second silicon oxide film is designated as t 2 , and the proportion of the film thickness of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film, t 2 /(t 1 +t 2 ), is designated as R 2 , the following conditions are satisfied:
0.10 μm≦ t 1 ≦2.00 μm; and

R 2 ≧0.70.

2. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the film thickness t 1 of the first silicon oxide film satisfies the condition: t 1 ≦1.00 μm.

3. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the film thickness t 1 of the first silicon oxide film satisfies the condition: t 1 ≧0.20 μm.

4. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the proportion R 2 of the film thickness of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film satisfies the condition: R 2 ≧0.80.

5. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the proportion R 2 of the film thickness of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film satisfies the condition: R 2 ≧0.90.

6. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the proportion R 2 of the film thickness of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film satisfies the condition: R 2 ≦0.97.

7. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the film thickness t 2 of the second silicon oxide film satisfies the condition: t 2 ≦10.00 μm.

8. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the second silicon oxide film is formed by a tetraethyl orthosilicate-chemical vapor deposition method.

9. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein 25% to 40% of over-etching is performed in the etching step.

10. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , wherein the deep reactive ion etching is achieved by a Bosch process.

11. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 1 , further comprising, forming through-holes that penetrate through the piezoelectric film before forming the upper electrode.

12. A diaphragm-type resonant micro electro mechanical system device produced by the method according to claim 1 comprising:
a laminate in which a first silicon oxide film, a second silicon oxide film, a lower electrode, a piezoelectric film, and an upper electrode are laminated in this order; and
a silicon substrate that supports the laminate through the first silicon oxide film side of the laminate,
wherein a diaphragm structure including a diaphragm having the first silicon oxide film and the second silicon oxide film is formed,
a recess is formed in the silicon substrate,
the second silicon oxide film having a stress with an absolute value of 100 MPa or less, and
when the film thickness of the first silicon oxide film is designated as t 1 , the film thickness of the second silicon oxide film is designated as t 2 , and the proportion of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film, t 2 /(t 1 +t 2 ), is designated as R 2 , the following conditions are satisfied:
0.10 μm≦ t 1 ≦2.00 μm; and

R 2 ≧0.70.

13. A method for producing a diaphragm-type resonant micro electro mechanical system device, the method comprising the steps of:
forming an upper electrode on the piezoelectric film side of a substrate for diaphragm-type resonant micro electro mechanical system devices in which a first silicon oxide film formed by thermal oxidation or by a process including a heat treatment at 900° C. or above, a second silicon oxide film having a stress with an absolute value of 100 MPa or less, a lower electrode, and a piezoelectric film are laminated in this order on a first surface of a silicon substrate; and
etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching until the first silicon oxide film is exposed so as to form a recess, and thereby forming a diaphragm structure including a diaphragm having the first silicon oxide film and the second silicon oxide film,
wherein when the film thickness of the first silicon oxide film is designated as t 1 , the film thickness of the second silicon oxide film is designated as t 2 , and the proportion of the film thickness of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film, t 2 /(t 1 +t 2 ), is designated as R 2 , the following conditions are satisfied:
0.10 μm≦ t 1 ≦2.00 μm; and

R 2 ≧0.70.

14. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 13 , wherein the film thickness t 1 of the first silicon oxide film satisfies the condition: t 1 ≧0.20 μm.

15. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 13 , wherein the proportion R 2 of the film thickness of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film satisfies the condition: R 2 ≧0.80.

16. The method for producing a diaphragm-type resonant micro electro mechanical system device according to claim 13 , wherein the proportion R 2 of the film thickness of the second silicon oxide film with respect to the sum of the film thickness of the first silicon oxide film and the film thickness of the second silicon oxide film satisfies the condition: R 2 ≦0.97.

Assignees

• Fujifilm Corp

Inventors

• Sano Takahiro
• Naono Takayuki

Classifications

• B81B3/0072 Primary

  For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers · CPC title

• B81B2203/0127

  Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

• G01P2015/084

  the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass · CPC title

• H04R31/00

  Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor {(manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182)} · CPC title

• B81B2203/04

  Electrodes · CPC title