Chamber components with polished internal apertures

US9687953B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9687953-B2
Application numberUS-201414318518-A
CountryUS
Kind codeB2
Filing dateJun 27, 2014
Priority dateJun 27, 2014
Publication dateJun 27, 2017
Grant dateJun 27, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through the at least one aperture of the ceramic article, the abrasive media including a polymer base and a plurality of abrasive particles.

First claim

Opening claim text (preview).

What is claimed is: 1. A method comprising: securing a ceramic article within an abrasive flow system to define one or more flow paths from the abrasive flow system to at least one aperture or more apertures formed in the ceramic article, wherein the ceramic article is a component for a semiconductor processing chamber, the component being selected from a group consisting of a substrate support assembly, an electrostatic chuck, a gas distribution plate, a nozzle, a showerhead, a flow equalizer, a cooling base, a gas feeder, a liner kit, and a chamber lid, wherein the component comprises one or more of Y 3 Al 5 O 12 , Y 4 Al 2 O 9 , Y 2 O 3 , Er 2 O 3 , Gd 2 O 3 , Er 3 Al 5 O 12 , Gd 3 Al 5 O 12 , YF 3 , Nd 2 O 3 , Er 4 Al 2 O 9 , ErAlO 3 , Gd 4 Al 2 O 9 , GdAlO 3 , Nd 3 Al 5 O 12 , Nd 4 Al 2 O 9 , NdAlO 3 , or a ceramic compound comprising Y 4 Al 2 O 9 and a solid-solution of Y 2 O 3 —ZrO 2 ; and polishing the least one aperture of the ceramic article, wherein the polishing is based on flowing an abrasive media through the at least one aperture of the ceramic article, and wherein the abrasive media comprises a polymer base and a plurality of abrasive particles, wherein a viscosity of the abrasive media is between about 150,000 cP and about 750,000 cP. 2. The method of claim 1 , further comprising: drilling through the ceramic article to produce the at least one aperture; and reaming the at least one aperture with a reaming device to increase a diameter of the at least one aperture prior to performing the polishing. 3. The method of claim 2 , wherein a first grit size of the drill is courser than a second grit size of the reaming device, wherein the first grit size of the drill is between about 100 grit and about 150 grit, and wherein the second grit size of the reaming device is between about 400 grit and about 800 grit. 4. The method of claim 1 , further comprising: periodically adjusting a flow direction of the abrasive media through the at least one aperture over a time duration, wherein a length of the time duration is between about 20 minutes and about 60 minutes. 5. The method of claim 1 , wherein a diameter of the at least one aperture is between about 0.01 inches and about 0.1 inches. 6. The method of claim 1 , wherein the plurality of abrasive particles comprises at least one of silicon carbide, diamond, or boron nitride. 7. The method of claim 1 , wherein an average size of each of the plurality of abrasive particles is between 5 micrometers and 100 micrometers. 8. The method of claim 1 , wherein the abrasive media further comprises an oil-based plasticizer. 9. A method comprising: securing a ceramic article within an abrasive flow system to define one or more flow paths from the abrasive flow system to at least one aperture formed in the ceramic article, wherein the ceramic article is a component for a semiconductor processing chamber, the component being selected from a group consisting of a substrate support assembly, an electrostatic chuck, a gas distribution plate, a nozzle, a showerhead, a flow equalizer, a cooling base, a gas feeder, a liner kit, and a chamber lid; and polishing the least one aperture of the ceramic article, wherein the polishing is based on flowing an abrasive media through the at least one aperture of the ceramic article, and wherein the abrasive media comprises a polymer base and a plurality of abrasive particles, wherein a viscosity of the abrasive media is between about 150,000 cP and about 750,000 cP.

Assignees

Inventors

Classifications

  • whereby the workpieces are mounted on a holder and are immersed in the abrasive material · CPC title

  • using plastically deformable grinding compound, moved relatively to the workpiece under the influence of pressure · CPC title

  • B24B31/006Primary

    for grinding the interior surfaces of hollow workpieces · CPC title

  • for grinding tubes internally · CPC title

  • designed for working internal surfaces of revolution, e.g. of cylindrical or conical shapes · CPC title

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What does patent US9687953B2 cover?
Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through th…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification B24B31/006. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jun 27 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).