Semiconductor device and semiconductor module

Patent metadata

Field	Value
Publication number	US-9685862-B2
Application number	US-201414293326-A
Country	US
Kind code	B2
Filing date	Jun 2, 2014
Priority date	Oct 24, 2013
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

A semiconductor device includes: a voltage-dividing resistor circuit including first and second resistors connected in series between a power supply potential and a reference potential and outputting a potential at a point of connection between the first and second resistors; a transient response detection circuit including a third resistor having a first end connected to the power supply potential and a capacitor connected between a second end of the third resistor and the reference potential, and outputting a potential at a point of connection between the third resistor and the capacitor; an AND circuit ANDing an output signal of the voltage-dividing resistor circuit and an output signal of the transient response detection circuit; and an output circuit, wherein switching of the output circuit is controlled by an output signal of the AND circuit.

First claim

What is claimed is:

1. A semiconductor device comprising:
a voltage-dividing resistor circuit including first and second resistors connected in series between a power supply potential and a reference potential and outputting a potential at a point of connection between the first and second resistors;
a transient response detection circuit including a third resistor having a first end connected to the power supply potential and a capacitor connected between a second end of the third resistor and the reference potential, and outputting a potential at a point of connection between the third resistor and the capacitor;
an AND circuit ANDing an output signal of the voltage-dividing resistor circuit and an output signal of the transient response detection circuit; and
an output circuit,
wherein switching of the output circuit is controlled by an output signal of the AND circuit.

2. The semiconductor device according to claim 1 , wherein the capacitor is configured of a high withstand voltage MOS element.

3. A semiconductor module comprising:
a high-side switching element and a low-side switching element which are totem-pole-connected;
a high-side control circuit controlling the high-side switching element;
a low-side control circuit controlling the low-side switching element; and
the semiconductor device according to claim 1 ,
wherein a potential at a point of connection between the high-side switching element and the low-side switching element is the reference potential, and
the semiconductor device supplies an output voltage of the output circuit to the high-side control circuit.

4. The semiconductor module according to claim 3 , further comprising a diode connected between the semiconductor device and the high-side control circuit.

5. The semiconductor module according to claim 3 , further comprising a bootstrap circuit supplying power to the high-side control circuit.

6. The semiconductor module according to claim 5 , further comprising a power supply circuit inputting a voltage converted to DC from an AC power supply through a rectification circuit and constituting first and second isolated power supplies,
wherein the first isolated power supply charges a capacitor of the bootstrap circuit, and
the second isolated power supply supplies the power supply potential to the semiconductor device.

7. The semiconductor module according to claim 6 , wherein the power supply circuit has a fourth resistor that steps down and insulates a P-N voltage.

8. The semiconductor module according to claim 6 , wherein the power supply circuit is configured in a forward scheme.

9. The semiconductor module according to claim 6 , wherein the power supply circuit is configured in a flyback scheme.

10. The semiconductor module according to claim 3 , wherein the high-side control circuit and the low-side control circuit are configured using a single-chip IC.

11. The semiconductor module according to claim 9 , wherein the high-side control circuit, the low-side control circuit, the semiconductor device, the bootstrap circuit, and the diode are configured using a single-chip IC.

12. The semiconductor module according to claim 3 , wherein some or all of semiconductors of the high-side switching element and the low-side switching element are SiC or GaN.

13. The semiconductor module according to claim 3 , wherein the high-side switching element and the low-side switching element are configured of an RC-IGBT having a reverse parallel diode function.

Assignees

• Mitsubishi Electric Corp

Inventors

• Yoshida Hiroshi
• Oyama Kyoko
• Tanaka Yoshikazu
• Uota Shiori
• Nishida Nobuya

Classifications

• Y10T307/609

  Cross-Sectional Technologies · mapped topic

• H02M1/08 Primary

  Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

• H02M7/5387

  in a bridge configuration · CPC title

• H03K2217/0036

  Means reducing energy consumption · CPC title

• H02M3/158 Primary

  including plural semiconductor devices as final control devices for a single load · CPC title