Light emitting device and method of manufacturing the same
US-2016186936-A1 · Jun 30, 2016 · US
US9685759B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9685759-B2 |
| Application number | US-201615248318-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2016 |
| Priority date | Aug 28, 2015 |
| Publication date | Jun 20, 2017 |
| Grant date | Jun 20, 2017 |
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A semiconductor laser device includes a base, a semiconductor laser element, a lid, a support member, a wavelength converting member, a holding member, and a buffer material. The lid has a recess formed in an upper portion of the lid, and a through-hole formed in the bottom of the recess. The support member is disposed in the recess and has a through-hole. A diameter of the through-hole of the support member is smaller than that of the through-hole of the lid. A coefficient of thermal expansion of the support member is different from that of the lid. The wavelength converting member is supported in the through-hole of the support member. The holding member is fixed to the lid and holds the support member. The buffer material is disposed in at least a part of a space between the lateral surfaces of the recess and the support member.
Opening claim text (preview).
What is claimed is: 1. A semiconductor laser device comprising: a base; a semiconductor laser element provided above the base; a lid provided over the base and housing the semiconductor laser element, the lid having a recess formed in an upper portion of the lid with the recess being defined by a lateral surface and a bottom, and the lid having a through-hole formed in the bottom of the recess; a support member disposed in the recess and having a through-hole disposed above the through-hole of the lid, a diameter of the through-hole of the support member being smaller than a diameter of the through-hole of the lid, the support member having a coefficient of thermal expansion that is different from a coefficient of thermal expansion of the lid, and the support member having a lateral surface spaced apart from the lateral surface of the recess; a wavelength converting member supported in the through-hole of the support member; a holding member fixed to the lid and holding an upper surface of the support member; and a buffer material disposed in at least a part of a space between the lateral surface of the recess and the lateral surface of the support member. 2. The semiconductor laser device according to claim 1 , wherein the buffer material is composed of a material having a Young's modulus smaller than a Young's modulus of the lid and a Young's modulus of the support member. 3. The semiconductor laser device according to claim 1 , wherein the buffer material is composed of a resin or an eutectic solder. 4. The semiconductor laser device according to claim 1 , wherein an opening of the through-hole of the support member is in a circular shape in plan view and has the diameter in a range of 0.1 mm to 1 mm on a lower side. 5. The semiconductor laser device according to claim 1 , wherein the through-hole of the support member has a cross-sectional shape that spreads out from bottom to top. 6. The semiconductor laser device according to claim 1 , wherein the support member is composed of a ceramic. 7. The semiconductor laser device according to claim 6 , wherein the support member is composed of aluminum oxide or aluminum nitride. 8. The semiconductor laser device according to claim 6 , wherein the lid is composed of a metal. 9. The semiconductor laser device according to claim 8 , wherein the lid is composed of a material containing iron as main component. 10. The semiconductor laser device according to claim 1 , wherein in plan view, the buffer material is disposed at a plurality of locations that are spaced apart from each other along a periphery of the support member. 11. The semiconductor laser device according to claim 1 , wherein the lateral surface of the recess has a stepped cross-sectional shape so as to spread out from bottom to top. 12. The semiconductor laser device according to claim 1 , wherein the holding member is welded to the lid. 13. The semiconductor laser device according to claim 1 , wherein the lid has a first lid surrounding the semiconductor laser element, and a second lid disposed on the first lid and having the recess. 14. The semiconductor laser device according to claim 8 , wherein the buffer material is composed of a resin. 15. The semiconductor laser device according to claim 1 , wherein a distance between the lateral surface of the recess and the lateral surface of the support member is in a range of 10 μm to 200 μm. 16. The semiconductor laser device according to claim 14 , wherein a distance between the lateral surface of the recess and the lateral surface of the support member is in a range of 10 μm to 200 μm. 17. The semiconductor laser device according to claim 1 , further comprising a lens provided in the lid between the semiconductor laser element and the support member. 18. The semiconductor laser device according to claim 13 , further comprising a lens provided on the first lid between the semiconductor laser element and the support member. 19. The semiconductor laser device according to claim 18 , wherein the semiconductor laser element is configured to emit light having a peak wavelength in a range of 300 nm to 500 nm. 20. The semiconductor laser device according to claim 19 , wherein the semiconductor laser element is formed of a Group III-V semiconductor. 21. The semiconductor laser device according to claim 1 , wherein in plan view, the buffer material is continuously disposed along a periphery of the support member to surround the support member.
Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title
characterised by the shape of the housings · CPC title
Details of lamp holders, terminals or connectors · CPC title
Details of lamp holders, terminals or connectors · CPC title
Light sources where the light is generated by photoluminescent material spaced from a primary light generating element · CPC title
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