Semiconductor laser device

US9685759B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9685759-B2
Application numberUS-201615248318-A
CountryUS
Kind codeB2
Filing dateAug 26, 2016
Priority dateAug 28, 2015
Publication dateJun 20, 2017
Grant dateJun 20, 2017

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  1. Title

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  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor laser device includes a base, a semiconductor laser element, a lid, a support member, a wavelength converting member, a holding member, and a buffer material. The lid has a recess formed in an upper portion of the lid, and a through-hole formed in the bottom of the recess. The support member is disposed in the recess and has a through-hole. A diameter of the through-hole of the support member is smaller than that of the through-hole of the lid. A coefficient of thermal expansion of the support member is different from that of the lid. The wavelength converting member is supported in the through-hole of the support member. The holding member is fixed to the lid and holds the support member. The buffer material is disposed in at least a part of a space between the lateral surfaces of the recess and the support member.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor laser device comprising: a base; a semiconductor laser element provided above the base; a lid provided over the base and housing the semiconductor laser element, the lid having a recess formed in an upper portion of the lid with the recess being defined by a lateral surface and a bottom, and the lid having a through-hole formed in the bottom of the recess; a support member disposed in the recess and having a through-hole disposed above the through-hole of the lid, a diameter of the through-hole of the support member being smaller than a diameter of the through-hole of the lid, the support member having a coefficient of thermal expansion that is different from a coefficient of thermal expansion of the lid, and the support member having a lateral surface spaced apart from the lateral surface of the recess; a wavelength converting member supported in the through-hole of the support member; a holding member fixed to the lid and holding an upper surface of the support member; and a buffer material disposed in at least a part of a space between the lateral surface of the recess and the lateral surface of the support member. 2. The semiconductor laser device according to claim 1 , wherein the buffer material is composed of a material having a Young's modulus smaller than a Young's modulus of the lid and a Young's modulus of the support member. 3. The semiconductor laser device according to claim 1 , wherein the buffer material is composed of a resin or an eutectic solder. 4. The semiconductor laser device according to claim 1 , wherein an opening of the through-hole of the support member is in a circular shape in plan view and has the diameter in a range of 0.1 mm to 1 mm on a lower side. 5. The semiconductor laser device according to claim 1 , wherein the through-hole of the support member has a cross-sectional shape that spreads out from bottom to top. 6. The semiconductor laser device according to claim 1 , wherein the support member is composed of a ceramic. 7. The semiconductor laser device according to claim 6 , wherein the support member is composed of aluminum oxide or aluminum nitride. 8. The semiconductor laser device according to claim 6 , wherein the lid is composed of a metal. 9. The semiconductor laser device according to claim 8 , wherein the lid is composed of a material containing iron as main component. 10. The semiconductor laser device according to claim 1 , wherein in plan view, the buffer material is disposed at a plurality of locations that are spaced apart from each other along a periphery of the support member. 11. The semiconductor laser device according to claim 1 , wherein the lateral surface of the recess has a stepped cross-sectional shape so as to spread out from bottom to top. 12. The semiconductor laser device according to claim 1 , wherein the holding member is welded to the lid. 13. The semiconductor laser device according to claim 1 , wherein the lid has a first lid surrounding the semiconductor laser element, and a second lid disposed on the first lid and having the recess. 14. The semiconductor laser device according to claim 8 , wherein the buffer material is composed of a resin. 15. The semiconductor laser device according to claim 1 , wherein a distance between the lateral surface of the recess and the lateral surface of the support member is in a range of 10 μm to 200 μm. 16. The semiconductor laser device according to claim 14 , wherein a distance between the lateral surface of the recess and the lateral surface of the support member is in a range of 10 μm to 200 μm. 17. The semiconductor laser device according to claim 1 , further comprising a lens provided in the lid between the semiconductor laser element and the support member. 18. The semiconductor laser device according to claim 13 , further comprising a lens provided on the first lid between the semiconductor laser element and the support member. 19. The semiconductor laser device according to claim 18 , wherein the semiconductor laser element is configured to emit light having a peak wavelength in a range of 300 nm to 500 nm. 20. The semiconductor laser device according to claim 19 , wherein the semiconductor laser element is formed of a Group III-V semiconductor. 21. The semiconductor laser device according to claim 1 , wherein in plan view, the buffer material is continuously disposed along a periphery of the support member to surround the support member.

Assignees

Inventors

Classifications

  • Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC · CPC title

  • characterised by the shape of the housings · CPC title

  • Details of lamp holders, terminals or connectors · CPC title

  • Details of lamp holders, terminals or connectors · CPC title

  • Light sources where the light is generated by photoluminescent material spaced from a primary light generating element · CPC title

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What does patent US9685759B2 cover?
A semiconductor laser device includes a base, a semiconductor laser element, a lid, a support member, a wavelength converting member, a holding member, and a buffer material. The lid has a recess formed in an upper portion of the lid, and a through-hole formed in the bottom of the recess. The support member is disposed in the recess and has a through-hole. A diameter of the through-hole of the …
Who is the assignee on this patent?
Nichia Corp
What technology area does this patent fall under?
Primary CPC classification H01S5/02208. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 20 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).