Light receiving apparatus, method for fabricating light receiving apparatus

Patent metadata

Field	Value
Publication number	US-9685570-B2
Application number	US-201615227644-A
Country	US
Kind code	B2
Filing date	Aug 3, 2016
Priority date	Aug 6, 2015
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

A light receiving apparatus includes a light receiving device including a compound semiconductor substrate, photodiodes, and bump electrodes; and a semiconductor integrated device including a silicon substrate and read-out circuits. Bonded, the integrated device and the light receiving device face each other in a direction of a first axis through the bump electrodes. The light receiving device has a back surface with first and second back edges extending in a direction of a second axis intersecting with the first axis. The light receiving device has a first slope face extending from the first back edge along a first reference plane, and a second slope face extending from the second back edge along a second reference plane. The back surface of the light receiving device extends along a third reference plane intersecting with the first axis. The first and second reference planes are inclined with respect to the third reference plane.

First claim

What is claimed is:

1. A light receiving apparatus comprising:
a light receiving device including a compound semiconductor substrate having a principal surface, a plurality of photodiodes each having an electrode, and a plurality of bump electrodes each of which is connected to at least one of the electrodes of the photodiodes, the photodiodes being arranged to form an array on the principal surface of the compound semiconductor substrate; and
a semiconductor integrated device including a silicon substrate and a plurality of read-out circuits arranged to form an array on the silicon substrate, each of the read-out circuits having an electrode that is electrically connected to the electrode of a corresponding photodiode in the light receiving device through the bump electrodes,
wherein the semiconductor integrated device is bonded with the light receiving device so as to face each other in a direction of a first axis through the bump electrodes,
the light receiving device has a back surface with a first back edge and a second back edge that extend in a direction of a second axis intersecting with the first axis,
the light receiving device has a first slope face extending from the first back edge along a first reference plane, and a second slope face extending from the second back edge along a second reference plane,
the back surface of the light receiving device extends along a third reference plane intersecting with the first axis, and
the first reference plane and the second reference plane are inclined with the third reference plane.

2. The light receiving apparatus according to claim 1 ,
wherein the semiconductor integrated device has a principal surface with a first upper edge and a second upper edge that extend in a direction of the second axis, and
the semiconductor integrated device has a first slope side extending from the first upper edge along the first reference plane and a second slope side extending from the second upper edge along the second reference plane.

3. The light receiving apparatus according to claim 2 ,
wherein the semiconductor integrated device has a back surface with a first lower edge and a second lower edge that extend in a direction of the second axis, and
the semiconductor integrated device has a first side face extending from the first lower edge along the first axis and a second side face extending from the second lower edge along the first axis.

4. The light receiving apparatus according to claim 1 ,
wherein the semiconductor integrated device has a back surface with a first lower edge and a second lower edge that extend in a direction of the second axis, and
the semiconductor integrated device has a first side face extending from the first lower edge along the first axis and a second side face extending from the second lower edge along the first axis.

5. The light receiving apparatus according to claim 1 , wherein the compound semiconductor substrate contains gallium as a group III constituent, and antimony as a group V constituent.

6. A method for fabricating a light receiving apparatus, the method comprising the steps of:
preparing a light receiving device chip including a compound semiconductor substrate with a principal surface, a plurality of photodiodes arrayed on the principal surface of the compound semiconductor substrate, and a plurality of bump electrodes formed on electrodes of the photodiodes, the light receiving device chip having a back surface with a first edge and a second edge;
preparing a semiconductor integrated device chip including a silicon substrate with a principal surface, and a plurality of read-out circuits arrayed on the principal surface of the silicon substrate;
forming a laminated device by bonding the light receiving device chip with the semiconductor integrated device chip while facing each other in a direction of a first axis through the bump electrodes of the light receiving device chip; and
forming a light receiving device having a first side surface and a second side surface by applying a mechanical machining to the first edge and the second edge of the back surface of the light receiving device chip,
wherein the light receiving device includes a back surface with a first back edge and a second back edge that extend in a direction of a second axis intersecting with the first axis,

the first side surface of the light receiving device extends from the first back edge along a first reference plane,
the second side surface of the light receiving device extends from the second back edge along a second reference plane,
the back surface of the light receiving device extends along a third reference plane intersecting with the first axis, and

the first reference plane and the second reference plane are inclined with respect to the third reference plane.

7. The method according to claim 6 , further comprising the steps of:
after forming the laminated device, forming a processed face in the light receiving device chip by applying a mechanical machining to a back surface of the compound semiconductor substrate of the laminated device; and
before forming the light receiving device, forming the back surface of the light receiving device chip by etching the processed face of the light receiving device chip.

8. The method according to claim 6 ,
wherein, in the step of forming the light receiving device by applying the mechanical machining to the back surface of the light receiving device chip, the mechanical machining is applied to the semiconductor integrated device chip so as to produce a semiconductor integrated device from the semiconductor integrated device chip,
the semiconductor integrated device has a principal surface with a first upper edge and a second upper edge that extend in a direction of the second axis, and
the semiconductor integrated device has a first upper side face extending from the first upper edge along the first reference plane, and a second upper side face extending from the second upper edge along the second reference plane.

Assignees

• Sumitomo Electric Industries

Inventors

• Miura Kohei
• Iguchi Yasuhiro

Classifications

• H01L31/0304

  Electricity · mapped topic

• H01L27/14649

  Electricity · mapped topic

• H01L31/184

  Electricity · mapped topic

• H01L31/035236 Primary

  Electricity · mapped topic

• H10F77/124

  comprising only Group III-V materials, e.g. GaAs · CPC title