High-voltage transistor device and production method

Patent metadata

Field	Value
Publication number	US-9685437-B2
Application number	US-201214234364-A
Country	US
Kind code	B2
Filing date	Jul 6, 2012
Priority date	Jul 26, 2011
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

The high-voltage transistor device has a p-type semiconductor substrate that is furnished with a p-type epitaxial layer. A well and a body region are located in the epitaxial layer. A source region is arranged in the body region, and a drain region is arranged in the well. A channel region is located in the body region between the well and the source region. A gate electrode is arranged above the channel region. In the part of the semiconductor substrate and the epitaxial layer underneath the source region and the channel region, a deep body region is present, which has a higher dopant concentration in comparison to the remainder of the semiconductor substrate.

First claim

The invention claimed is:

1. A high-voltage transistor device, comprising:
a p-type semiconductor substrate provided with a p-type epitaxial layer;
a high-voltage transistor, formed with
an n-type well in the p-type epitaxial layer,
a p-type body region in the p-type epitaxial layer,
an n-type source region in the p-type body region,
an n-type drain region in the n-type well,
a channel region arranged in the p-type body region between the n-type well and the n-type sou…

Assignees

• Knaipp Martin
• Ams Ag

Inventors

• Knaipp Martin

Classifications

• H10P30/20

  Electricity · mapped topic

• H01L29/0692

  Electricity · mapped topic

• H01L27/088 Primary

  Electricity · mapped topic

• H01L29/402

  Electricity · mapped topic

• H01L21/265

  Electricity · mapped topic