Abrasive composition and method for producing semiconductor substrate

Patent metadata

Field	Value
Publication number	US-9685341-B2
Application number	US-201314382876-A
Country	US
Kind code	B2
Filing date	Mar 12, 2013
Priority date	Mar 14, 2012
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

The polishing composition has a pH of 7 or more and is used in applications for polishing a silicon substrate. The polishing composition contains abrasive grains and a water-soluble polymer. The water-soluble polymer is a copolymer including a first monomer unit having a characteristic value P of 50-100 inclusive, and a second monomer unit having a characteristic value P of at least −100 and less than 50. The characteristic value P is the result of subtracting an adsorption coefficient S2 of the abrasive grains obtained through a specific standard test B from a wettability coefficient S1 of the silicon substrate obtained through a specific standard test A.

First claim

The invention claimed is:

1. A method of polishing a substrate consisting of silicon, the method comprising:
providing a substrate consisting of silicon; and
polishing the substrate with a polishing composition having a pH of 7 or more the polishing composition comprising abrasive grains and a water-soluble polymer,
wherein the water-soluble polymer is a copolymer composed of a first monomer unit having a characteristic value P of 50 or more and 100 or less and a second monomer unit having a characteristic value P of −100 or more and less than 50, wherein the characteristic value P is a difference obtained by subtracting an adsorption coefficient S2 for the abrasive grains obtained through a standard test B described below from a wettability coefficient S1 for the silicon substrate obtained through a standard test A described below:
[Standard test A]
(a1) a homopolymer consisting of only a monomer unit to be tested having an average degree of polymerization of 800 or more and 1200 or less is provided as a test polymer;
(a2) a square silicon chip (side length of 32 mm, conduction type of P type, crystal orientation of <100>, and resistivity of 0.1 Ω·cm or more and 100 Ω·cm or less is immersed in a hydrofluoric acid solution so that an oxide film on a silicon chip surface is removed;
(a3) the silicon chip, in a vertically upright state, is immersed in a 0.02% aqueous solution of the test polymer for 30 seconds;
(a4) the silicon chip is removed from the aqueous solution of the test polymer, and then the silicon chip is arranged such that one diagonal line thereof is oriented in the vertical direction; and after 5-second standing, the shortest distance X [mm] from the highest point of the silicon chip to the liquid surface remaining on the silicon chip surface is measured;
(a5) the wettability coefficient S1 of the monomer unit composing the test polymer is calculated from the measured shortest distance X based on the expression below:
Wettability coefficient S 1={(the length of the diagonal line of the silicon chip [mm])−(the shortest distance X [mm])}/(the length of the diagonal line of the silicon chip [mm])×100

[Standard test B]
(b1) a homopolymer consisting of only a monomer unit to be tested having an average degree of polymerization of 800 or more and 1200 or less is provided as a test polymer;
(b2) an aqueous solution containing 10% by mass of colloidal silica having an average primary particle size of 35 nm, 0.2% by mass of ammonia, and 0.02% by mass of the test polymer is prepared; and the aqueous solution is allowed to stand for 12 hours so that the test polymer is adsorbed onto the colloidal silica;
(b3) water is added to the aqueous solution to dilute the solution in a predetermined dilution rate in terms of volume; and the diluted aqueous solution is centrifuged to precipitate the colloidal silica and the test polymer adsorbed onto the colloidal silica;
(b4) the concentration Y [% by mass] of the test polymer in a supernatant liquid of the aqueous solution after centrifugation treatment is measured;
(b5) the adsorption coefficient S2 of the monomer unit composing the test polymer is calculated from the measured concentration Y of the test polymer based on the expression below:
Adsorption coefficient S 2={0.02−(the concentration Y )×(the dilution rate)}/0.02×100.

2. The method according to claim 1 , wherein the copolymer is a block copolymer or a graft copolymer.

3. The method according to claim 1 , wherein at least one monomer unit composing the copolymer is a monomer unit derived from an ethylenically unsaturated compound.

4. The method according to claim 1 , wherein the first monomer unit has at least one structure selected from an ethylene oxide group, a carboxy group, a sulfo group, an amino group, a hydroxyl group, an amide group, an imide group, a nitrile group, an ether group, an ester group, and salts thereof.

5. The method according to claim 1 , wherein the second monomer unit has a heterocyclic ring.

6. The method according to claim 5 , wherein the heterocyclicring is a lactam group.

Assignees

• Fujimi Inc

Inventors

• Mori Yoshio
• Tsuchiya Kohsuke
• Asada Maki
• Takahashi Shuhei

Classifications

• H10P90/129

  by polishing · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402 Primary

  of semiconductor materials · CPC title

• B24B1/00

  Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes · CPC title

• C09G1/00

  Polishing compositions (French polish C09F11/00; detergents C11D) · CPC title