Aluminum electrode, method of forming an aluminum electrode and electronic device therewith

Patent metadata

Field	Value
Publication number	US-9685252-B2
Application number	US-201414527518-A
Country	US
Kind code	B2
Filing date	Oct 29, 2014
Priority date	Jul 31, 2014
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

The present disclosure relates to an aluminum electrode, a method of forming an aluminum electrode and an electronic device therewith. An aluminum electrode according to one aspect of the present disclosure comprises: a bottom layer consisting of molybdenum; a top layer consisting of molybdenum; and an aluminum layer located between the bottom layer and the top layer, wherein the bottom layer, the top layer and the aluminum layer are formed at a temperature below 120° C. An aluminum electrode according to one embodiment of the present disclosure eliminates the mouse bite phenomenon. An aluminum electrode according to another aspect of the present disclosure comprises: a bottom layer consisting of a metal or metal-alloy nitride; a top layer consisting of molybdenum; and an aluminum layer located between the bottom layer and the top layer, wherein the bottom layer, the top layer and the aluminum layer are formed at a temperature below 120° C. An aluminum electrode according to another embodiment of the present disclosure eliminates both of the mouse bite phenomenon and the undercut phenomenon, and can further arrive at a desired profile angle by controlling the content of nitrogen.

First claim

The invention claimed is:

1. An aluminum electrode comprising:
a bottom layer consisting of a metal nitride or a metal-alloy nitride;
a top layer consisting of molybdenum; and
an aluminum layer located between the bottom layer and the top layer, wherein the bottom layer, the top layer and the aluminum layer are formed at a temperature below 120° C.,
wherein the metal nitride is selected from one of MoN x and AlN x , and the metal-alloy nitride is selected from one of MoNbN x and MoWN x .

2. The aluminum electrode of claim 1 , wherein the bottom layer, the top layer and the aluminum layer are formed at 50° C. or 80° C.

3. The aluminum electrode of claim 1 , wherein the range of x is between 0 and 3.

4. The aluminum electrode of claim 3 , wherein x is 2.

5. The aluminum electrode of claim 1 , wherein a thickness of the bottom layer is between 100Å and 300Å , a thickness of the aluminum layer is between 2000Å and 4000Å , and a thickness of the top layer is between 600Å and 1000Å.

6. An electronic device comprising the aluminum electrode according to claim 1 .

Assignees

• Boe Technology Group Co Ltd

Inventors

• Wang Can
• Liu Fang
• Liu Yingwei

Classifications

• H01B1/023 Primary

  Alloys based on aluminium · CPC title

• C23C14/16

  on metallic substrates or on substrates of boron or silicon · CPC title

• C23C14/18

  on other inorganic substrates · CPC title

• B32B15/017

  one layer being formed of aluminium or an aluminium alloy, another layer being formed of an alloy based on a non ferrous metal other than aluminium · CPC title

• H10K50/82

  Cathodes · CPC title