Apparatus and method for an optical switch having a 2×1 multi-mode interferometer and photodetector

Patent metadata

Field	Value
Publication number	US-9684131-B2
Application number	US-201414245481-A
Country	US
Kind code	B2
Filing date	Apr 4, 2014
Priority date	Apr 4, 2014
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

Embodiments are provided for an improved 2×1 switch cell design with integrated photodiode for off-state monitoring. In an embodiment, am optical switch comprises a 2×1 multi-mode interferometer (MMI) coupler including two input waveguides jointly coupled to an output waveguide, and a photodetector coupled to an edge of a first waveguide of the input waveguides, and positioned next to a side of the output waveguide. In another embodiment, an optical chip comprises two input waveguides parallel to each other, and an output waveguide coupled to the two input waveguides. The optical chip further includes a photodetector coupled to a first waveguide of the two input waveguides, and positioned next to the output waveguide, and a branch waveguide extending from the first waveguide into the photodetector.

First claim

What is claimed is:

1. An optical switch comprising:
a 2×1 multi-mode interferometer (MMI) coupler including two input waveguides jointly coupled to an output waveguide at a junction of the input waveguides and the output waveguide; and
a first photodetector coupled to an edge of a first waveguide of the input waveguides at the junction of the input waveguides and the output waveguide, and extending along a side of the output waveguide.

2. The optical switch of claim 1 further comprising a second photodetector coupled to an edge of a second waveguide of the two input waveguides at the junction of the input waveguides and the output waveguide, and extending along a second side of the output waveguide opposite to the first photodetector.

3. The optical switch of claim 1 , wherein the first photodetector is a germanium photodetector.

4. The optical switch of claim 1 , wherein the optical switch does not comprise a power tap at the output waveguide.

5. The optical switch of claim 1 , wherein the optical switch does not comprise another photodetector coupled to the output waveguide at the junction of the input waveguides and the output waveguide.

6. The optical switch of claim 1 , wherein the first photodetector has a tapered side with an increasing separation from the output waveguide as the first photodetector extends along the side of the output waveguide.

7. The optical switch of claim 1 , wherein the first photodetector has a lateral dimension substantially greater than a lateral dimension of the first waveguide and a lateral dimension of the output waveguide, and wherein the lateral dimension of the first photodetector has a length maximizing optical coupling efficiency from the first waveguide to the first photodetector in an off-state operation of the optical switch.

8. The optical switch of claim 1 , wherein the first photodetector is in a same plane as the 2×1 MMI coupler.

9. The optical switch of claim 1 , wherein the first photodetector is on top of a silicon layer that is in a same plane as the 2×1 MMI coupler.

10. A method for making an optical switch, the method comprising:
forming, on a substrate using lithographic processes, a 2×1 multi-mode interferometer (MMI) coupler including two input waveguides jointly coupled to an output waveguide at a junction of the input waveguides and the output waveguide; and
forming a first photodetector coupled to an edge of a first waveguide of the input waveguides at the junction of the input waveguides and the output waveguide, and extending along a side of the output waveguide.

11. The method of claim 10 , further comprising forming a branch waveguide extending from the first waveguide at the junction into the first photodetector.

12. The method of claim 11 , further comprising:
forming a second photodetector coupled to an edge of a second waveguide of the two input waveguides at the junction of the input waveguides and the output waveguide, and extending along a second side of the output waveguide opposite to the first photodetector; and
forming a second branch waveguide extending from the second waveguide at the junction into the second photodetector.

13. The method of claim 10 , wherein the first photodetector is formed on the substrate using the lithographic processes.

14. The method of claim 10 , wherein the forming the first photodetector includes growing a germanium layer on top of a silicon layer that is formed in a same plane as the 2×1 MMI coupler.

15. The method of claim 10 , wherein forming the first photodetector comprises forming the first photodetector with a tapered side with an increasing separation from the output waveguide as the first photodetector extends along the side of the output waveguide.

16. The method of claim 10 , wherein forming the first photodetector comprises forming the first photodetector with a lateral dimension substantially greater than a lateral dimension of the first waveguide and a lateral dimension of the output waveguide, and wherein the lateral dimension of the first photodetector has a length maximizing optical coupling efficiency from the first waveguide to the first photodetector in an off-state operation of the optical switch.

17. The method of claim 10 , wherein forming the first photodetector comprises forming the first photodetector in a same plane as the 2×1 MMI coupler.

18. The method of claim 10 , further comprising forming a second photodetector coupled to an edge of a second waveguide of the two input waveguides at the junction of the input waveguides and the output waveguide, and extending along a second side of the output waveguide opposite to the first photodetector.

19. The optical switch of claim 1 , further comprising a branch waveguide extending from the first waveguide at the junction into the first photodetector.

20. The optical switch of claim 2 , further comprising:
a first branch waveguide extending from the first waveguide at the junction into the first photodetector; and
a second branch waveguide extending from the second waveguide at the junction into the second photodetector.

Assignees

• Huawei Tech Co Ltd
• Huawei Tech Ltd

Inventors

• Dumais Patrick
• Bernier Eric

Classifications

• G02B6/125

  Bends, branchings or intersections · CPC title

• G02B6/2813

  based on multimode interference effect, i.e. self-imaging · CPC title

• G02B6/4215

  the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers (G02B6/4246 takes precedence) · CPC title

• G02F1/3136

  of interferometric switch type · CPC title

• G02B6/29344 Primary

  operating by modal interference or beating, i.e. of transverse modes, e.g. zero-gap directional coupler, MMI · CPC title