Filters for blocking macroparticles in plasma deposition apparatus

Patent metadata

Field	Value
Publication number	US-9683285-B2
Application number	US-201414218434-A
Country	US
Kind code	B2
Filing date	Mar 18, 2014
Priority date	Mar 25, 2013
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.

First claim

What is claimed is:

1. A physical vapor deposition apparatus comprising:
a cathode having a first side and a second side, the cathode being configured to generate a plasma;
a substrate holder having a first side and a second side, the first side of the substrate holder being configured to hold a substrate, the second side of the cathode facing the first side of the substrate holder, the second side of the cathode including a surface from which material of the cathode is vaporized and ionized, the substrate including a surface onto which the material is deposited;
a magnet arrangement operable to guide the plasma, the magnet arrangement consisting of:
a first permanent magnet disposed proximate to and facing the first side of the cathode, the first permanent magnet not being disposed between the cathode and the substrate holder, the first permanent magnet being a single magnet, and
a second permanent magnet disposed proximate to and facing the second side of the substrate holder, the second permanent magnet not being disposed between the cathode and the substrate holder, a magnetic field being generated by and existing between the first permanent magnet and the second permanent magnet, the second permanent magnet being a single magnet; and
a structure disposed between the second side of the cathode and the first side of the substrate holder, the structure consisting of a planar sheet of material, the structure blocking straight paths between the cathode and the substrate, the structure being positioned at a first position proximate a minimum of a strength of the magnetic field between the first permanent magnet and the second permanent magnet, a flow of the plasma substantially following the magnetic field, and the flow of the plasma passing around the structure at the first position.

2. The apparatus of claim 1 , wherein the structure is configured to have a current applied to the structure.

3. The apparatus of claim 1 , further comprising:
an anode member, wherein the cathode and the anode member are configured to generate the plasma.

4. The apparatus of claim 1 , wherein the structure is configured to reflect macroparticles generated at the cathode away from the substrate when the physical vapor deposition apparatus is in operation.

5. The apparatus of claim 1 , wherein the planar sheet of material has a first edge and a second edge, and wherein the planar sheet of material is disposed with respect to the cathode so that the first edge is closer to the cathode than the second edge.

6. The apparatus of claim 1 , wherein the structure comprises copper configured to be cooled with water.

7. The apparatus of claim 1 , wherein the structure comprises a refractory material.

8. The apparatus of claim 1 , further comprising:
a system controller, wherein the system controller is configured to execute instructions so that the physical vapor deposition apparatus performs a method including:
generating the plasma; and
depositing a film on the surface of the substrate, wherein the film includes the material from the cathode.

9. A physical vapor deposition apparatus comprising:
a cathode having a first side and a second side, the cathode being configured to generate a plasma;
a substrate holder having a first side and a second side, the first side of the substrate holder being configured to hold a substrate, the second side of the cathode facing the first side of the substrate holder, the second side of the cathode including a surface from which material of the cathode is vaporized and ionized, the substrate including a surface onto which the material is deposited;
a magnet arrangement operable to guide the plasma, the magnet arrangement consisting of:
a first permanent magnet disposed proximate to and facing the first side of the cathode, the first permanent magnet not being disposed between the cathode and the substrate holder, the first permanent magnet being a single magnet, and
a second permanent magnet disposed proximate to and facing the second side of the substrate holder, the second permanent magnet not being disposed between the cathode and the substrate holder, a magnetic field being generated by and existing between the first permanent magnet and the second permanent magnet, the second permanent magnet being a single magnet; and
a structure disposed between the second side of the cathode and the first side of the substrate holder, the structure consisting of a planar sheet of material, the structure blocking straight paths between the cathode and the substrate, the structure being positioned at a first position proximate a minimum of a strength of the magnetic field between the first permanent magnet and the second permanent magnet, a flow of the plasma substantially following the magnetic field, the flow of the plasma passing around the structure at the first position, the structure being configured as an anode, and the cathode and the structure configured to generate the plasma.

10. The apparatus of claim 9 , wherein the structure is configured to have a current applied to the structure.

11. The apparatus of claim 9 , wherein the structure is configured to reflect macroparticles generated at the cathode away from the substrate when the physical vapor deposition apparatus is in operation.

12. The apparatus of claim 9 , wherein the planar sheet of material has a first edge and a second edge, and wherein the planar sheet of material is disposed with respect to the cathode so that the first edge is closer to the cathode than the second edge.

13. The apparatus of claim 9 , wherein the structure comprises copper configured to be cooled with water.

14. The apparatus of claim 9 , wherein the structure comprises a refractory material.

15. The apparatus of claim 9 , wherein the planar sheet of material is disposed at an angle with respect to the straight paths between the cathode and the substrate.

16. The apparatus of claim 9 , further comprising:
a system controller, the system controller configured to execute instructions so that the physical vapor deposition apparatus performs a method including:
generating the plasma; and
depositing a film on the surface of the substrate, wherein the film includes the material from the cathode.

17. The apparatus of claim 1 , wherein the planar sheet of material is disposed at an angle with respect to the straight paths between the cathode and the substrate.

Assignees

• Anders Andre
• Kolbeck Jonathan
• Univ California

Inventors

• Anders Andre
• Kolbeck Jonathan

Classifications

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• H01J2237/028

  Particle traps · CPC title

• H01J37/3408

  Planar magnetron sputtering · CPC title

• C23C14/564 Primary

  Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title