Sputtering target for magnetic recording film

US9683284B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9683284-B2
Application numberUS-201213982051-A
CountryUS
Kind codeB2
Filing dateMar 23, 2012
Priority dateMar 30, 2011
Publication dateJun 20, 2017
Grant dateJun 20, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (I G /I D ) of peak intensities of the G-band to the D-band in Raman scattering spectrometry is 5.0 or less. The sputtering target for a magnetic recording film, which contains carbon powders dispersed therein, makes it possible to produce a magnetic thin film having a granular structure without using an expensive apparatus for co-sputtering; and in particular, the target is an Fe—Pt-based sputtering target. Carbon is a material which is difficult to sinter and has a problem that carbon particles are apt to form agglomerates. There is hence a problem that carbon masses are readily detached during sputtering to generate a large number of particles on the film after sputtering. The high-density sputtering target can solve these problems.

First claim

Opening claim text (preview).

The invention claimed is: 1. A sputtering target for a magnetic recording film, the sputtering target having a composition comprising 5 mol % or more and 60 mol % or less of Pt, 20 mol % or more and 70 mol % or less of C, and the balance of Fe, and having a ratio (I G /I D ) of a peak intensity of G-band (I G ) to a peak intensity of D-band (I D ) of 5.0 or less in Raman scattering spectrometry of the sputtering target, and having a relative density of 90% or more. 2. A sputtering target for a magnetic recording film, the sputtering target having a composition comprising 0.5 mol % or more and 20 mol % or less of at least one element selected from the group consisting of B, Ru, Ag, Au, and Cu, 5 mol % or more and 60 mol % or less of Pt, 20 mol % or more and 70 mol % or less of C, and Fe, and having a ratio (I G /I D ) of a peak intensity of G-band (I G ) to a peak intensity of D-band (I D ) of 5.0 or less in Raman scattering spectrometry of the sputtering target. 3. The sputtering target for a magnetic recording film according to claim 2 , wherein the sputtering target further comprises 0.5 mol % or more and 20 mol % or less of at least one oxide selected from the group consisting of SiO 2 , Cr 2 O 3 , CoO, Ta 2 O 5 , B 2 O 3 , MgO, and Co 3 O 4 . 4. The sputtering target for a magnetic recording film according to claim 2 , wherein the sputtering target has a relative density of 90% or more. 5. A sputtering target for a magnetic recording film, the sputtering target having a composition comprising 0.5 mol % or more and 20 mol % or less of at least one oxide selected from the group consisting of SiO 2 , Cr 2 O 3 , CoO, Ta 2 O 5 , B 2 O 3 , MgO, and Co 3 O 4 , 5 mol % or more and 60 mol % or less of Pt, 20 mol % or more and 70 mol % or less of C, and the balance of Fe, and having a ratio (I G /I D ) of a peak intensity of G-band (I G ) to a peak intensity of D-band (I D ) of 5.0 or less in Raman scattering spectrometry of the sputtering target. 6. The sputtering target for a magnetic recording film according to claim 5 , wherein the sputtering target has a relative density of 90% or more. 7. The sputtering target according to claim 1 , wherein the 20 mol % or more and 70 mol % or less of C is in the form of carbon black. 8. The sputtering target according to claim 1 , wherein the 20 mol % or more and 70 mol % or less of C is in the form of glassy carbon. 9. The sputtering target according to claim 1 , wherein the 20 mol % or more and 70 mol % or less of C is in the form of graphite. 10. The sputtering target according to claim 1 , wherein the sputtering target is a sintered compact of raw material powders having been mixed, pulverized, compacted, and sintered.

Assignees

Inventors

Classifications

  • C22C5/04Primary

    Alloys based on a platinum group metal · CPC title

  • comprising other non-metallic compounds or more than 5% of graphite · CPC title

  • Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

  • containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60 · CPC title

  • Coating a support with a magnetic layer by sputtering · CPC title

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What does patent US9683284B2 cover?
A sputtering target for a magnetic recording film which contains carbon, the sputtering target is characterized in that the ratio (I G /I D ) of peak intensities of the G-band to the D-band in Raman scattering spectrometry is 5.0 or less. The sputtering target for a magnetic recording film, which contains carbon powders dispersed therein, makes it possible to produce a magnetic thin film havi…
Who is the assignee on this patent?
Ogino Shin-Ichi, Nakamura Yuichiro, Jx Nippon Mining & Metals Corp
What technology area does this patent fall under?
Primary CPC classification C22C5/04. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jun 20 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).