Thick-film paste containing lead-tungsten-based oxide and its use in the manufacture of semiconductor devices

Patent metadata

Field	Value
Publication number	US-9683112-B2
Application number	US-201414519404-A
Country	US
Kind code	B2
Filing date	Oct 21, 2014
Priority date	Oct 21, 2014
Publication date	Jun 20, 2017
Grant date	Jun 20, 2017

Abstract

The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers and a method for doing so. The thick-film paste comprises a source of an electrically conductive metal and a lead-tungsten-based oxide dispersed in an organic medium. The invention also provides a semiconductor device comprising an electrode formed from the thick-film paste.

First claim

What is claimed is:

1. A thick-film paste composition comprising:
a) 80-99.5 wt % of a source of electrically conductive metal;
b) 0.5 to 20 wt % of a vanadium-free, tellurium-free lead-tungsten-based oxide; and
c) an organic medium;

wherein said source of electrically conductive metal and said vanadium-free, tellurium-free lead-tungsten-based oxide are dispersed in said organic medium and wherein the above wt % are based on the total weight of said source of electrically conductive metal and said vanadium-free, tellurium-free lead-tungsten-based oxide, said vanadium-free, tellurium-free lead-tungsten-based oxide consisting of 75-88wt % PbO and 12-25 wt % WO 3 , wherein the wt % of PbO and WO 3 are based on the total weight of said vanadium-free tellurium-free lead-tungsten-based oxide.

2. The thick-film paste composition of claim 1 , wherein said electrically conductive metal is selected from the group consisting of Ag, Cu, Au, Pd, Pt, Sn, Al and Ni.

3. The thick-film paste composition of claim 2 , wherein said electrically conductive metal is Ag.

4. A semiconductor device comprising an electrode formed from a thick-film paste composition comprising:
a) 80-99.5 wt % of a source of electrically conductive metal;
b) 0.5 to 20 wt % of a vanadium-free, tellurium-free lead-tungsten-based oxide; and
c) an organic medium;

wherein said source of electrically conductive metal and said vanadium-free, tellurium-free lead-tungsten-based oxide are dispersed in said organic medium and wherein the above wt % are based on the total weight of said source of electrically conductive metal and said vanadium-free, tellurium-free lead-tungsten-based oxide, said vanadium-free, tellurium-free lead-tungsten-based oxide consisting of 75-88 wt % PbO and 12-25 wt % WO 3 , wherein the wt % of PbO and WO 3 are based on the total weight of said vanadium-free tellurium-free lead-tungsten-based oxide.

5. The semiconductor device of claim 4 , wherein said electrically conductive metal is selected from the group consisting of Ag, Cu, Au, Pd, Pt, Sn, Al and Ni.

6. The semiconductor device of claim 5 , wherein said electrically conductive metal is Ag.

Assignees

• Du Pont

Inventors

• Bernardina Katherine Anne
• Laughlin Brian J
• Vernooy Paul Douglas

Classifications

• H01B1/22

  the conductive material comprising metals or alloys · CPC title

• H01B1/16 Primary

  the conductive material comprising metals or alloys · CPC title

• C09D5/24 Primary

  Electrically-conducting paints {(conductive materials H01B1/00)} · CPC title

• C03C2218/119

  by printing · CPC title

• C03C2217/445

  Organic continuous phases · CPC title