Method for forming organic semiconductor film

Patent metadata

Field	Value
Publication number	US-9680099-B2
Application number	US-201514835317-A
Country	US
Kind code	B2
Filing date	Aug 25, 2015
Priority date	Mar 13, 2013
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 μm and an energy density of from 0.1 to 10 J/cm 2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.

First claim

What is claimed is:

1. A method for forming an organic semiconductor film, the method comprising:
when forming an organic semiconductor film made of an organic semiconductor material,
forming a solution film by applying a solution containing at least an organic semiconductor material and a solvent to at least a part of a substrate;
adjusting an irradiation of electromagnetic waves to the solution film so that an energy density of the electromagnetic waves on a surface of the solution film is from 0.1 to 0.7 times an energy density of the electromagnetic waves at a focal position; and
drying the solution film by irradiating at least a part of the solution film with the electromagnetic waves with a wavelength of at least 8 μm and an energy density of from 0.1 to 10 J/cm 2 on the surface of the solution film before the solution film dries.

2. The method for forming the organic semiconductor film according to claim 1 , wherein the substrate has a transmittance of the electromagnetic waves of at least 50%.

3. The method for forming the organic semiconductor film according to claim 1 , wherein an entire surface of the solution film is scanned by the electromagnetic waves.

4. The method for forming the organic semiconductor film according to claim 1 , wherein the drying of the solution film is performed by scanning at least part of the solution film with the electromagnetic waves, and a scanning spacing of the electromagnetic waves is equal to or smaller than a spot diameter of the electromagnetic waves on the surface of the solution film.

5. The method for forming the organic semiconductor film according to claim 1 , wherein the drying of the solution film is performed by scanning at least part of the solution film with the electromagnetic waves, and a scanning speed of the electromagnetic waves is from 0.02 to 1 m/sec.

6. The method for forming the organic semiconductor film according to claim 1 , wherein a defocusing is performed by shifting the focal position of the electromagnetic waves from the surface of the solution film so that the energy density of the electromagnetic waves on the surface of the solution film is from 0.1 to 0.7 times the energy density of the electromagnetic waves at the focal position.

7. The method for forming the organic semiconductor film according to claim 6 , wherein the defocusing is performed by setting optical distances of the substrate and an optical system irradiating the electromagnetic waves so that the surface of the solution film is at the focal position and moving at least the substrate or the optical system in an optical axis direction of the electromagnetic waves.

8. The method for forming the organic semiconductor film according to claim 7 , wherein the defocusing is performed so that the focal point of the electromagnetic waves is positioned further upstream in an advancing direction of the electromagnetic waves than the surface of the solution film.

Assignees

• Fujifilm Corp

Inventors

• Maehara Yoshiki
• Usami Yoshihisa

Classifications

• H01L51/0558

  Electricity · mapped topic

• H01L51/0026 Primary

  Electricity · mapped topic

• H01L51/0003

  Electricity · mapped topic

• H10K71/40 Primary

  Thermal treatment, e.g. annealing in the presence of a solvent vapour · CPC title

• H10K71/12 Primary

  using liquid deposition, e.g. spin coating · CPC title