Photovoltaic devices including nitrogen-containing metal contact
US-2015380601-A1 · Dec 31, 2015 · US
US9680036B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9680036-B2 |
| Application number | US-201213342231-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 3, 2012 |
| Priority date | Jan 6, 2011 |
| Publication date | Jun 13, 2017 |
| Grant date | Jun 13, 2017 |
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A method of reducing bow and/or improving the electrical performance of an aluminum back contacted silicon solar cell includes applying to a silicon wafer substrate a paste including aluminum and an organometallic compound, and firing the substrate. The organometallic compound is a C 1 to C 30 organometallic compound of a metal selected from the group consisting of Ag, Al, Ba, Bi, Ca, Co, Cr, Cu, Fe, K, Li, Mg, Mn, Mo, Na, Nd, Ni, Sb, Si, Sn, Sr, Ta, V, Zn, Zr. A paste is formed having an exothermic reaction peak at a temperature of at least 300° C. to less than 660° C.
Opening claim text (preview).
The invention claimed is: 1. A method of forming an aluminum back contacted silicon solar cell having at least one of reduced bow and improved electrical performance, comprising: a. providing a silicon wafer substrate, b. providing a paste comprising: i. aluminum, ii. a glass fit, and iii. an organometallic compound, wherein the organometallic compound is an organic compound of a metal selected from the group consisting of cobalt, manganese, nickel, iron, silicon, tin, antimony, bismuth, vanadium, strontium and combinations thereof, c. applying the paste to the silicon wafer substrate to form a coated substrate, and d. firing the coated substrate for a time and at a temperature sufficient to sinter the aluminum together with the organometallic compound and fuse the glass frit. 2. The method of claim 1 , wherein the organometallic compound is provided in the form of a compound having from 1 to 6 hydrocarbon residues, the residues independently having from 1 to 30 carbon atoms. 3. The method of claim 1 , wherein the glass frit comprises a. 15-55 mol % Bi 2 O 3 , b. 15-55 mol % SiO 2 , c. 1-15 mol % B 2 O 3 , and d. 5-35 mol % (Li 2 O+Na 2 O+K 2 O). 4. The method of claim 1 , wherein the glass frit comprises: a. 20-55 mol % Bi 2 O 3 , b. 10-35 mol % K 2 O, c. 1-10 mol % B 2 O 3 and d. 10-50 mol % SiO 2 . 5. The method of claim 1 , wherein the glass frit comprises: a. 10-25 mol % B 2 O 3 , b. 0.5-3 mol % K 2 O, c. 0.01-3 mol % Na 2 O, and d. 70-90 mol % SiO 2 . 6. The method of claim 1 , wherein the glass frit comprises: a. 5-15 mol % K 2 O, b. 1-8 mol % Li 2 O, c. 16-28 mol % Na 2 O, d. 0.2-8 mol % P 2 O 5 , e. 30-50 mol % SiO 2 , f. 15-35 mol % TiO 2 , and g. 1-16 mol % V 2 O 5 . 7. The method of claim 1 , wherein a sufficient amount of the organometallic compound is present in order to provide 100 ppmw to 10 wt % of the metal. 8. The method of claim 1 , wherein a sufficient amount of the organometallic compound is present in order to provide 500 ppmw to 8 wt % of the metal. 9. The method of claim 1 , wherein a sufficient amount of the organometallic compound is present in order to provide 1000 ppmw to 7 wt % of the metal. 10. The method of claim 1 , wherein a sufficient amount of the organometallic compound is present in order to provide 0.05 wt % to 5 wt % of the metal. 11. The method of claim 1 , wherein the aluminum metal is present in a proportion of 40-80 wt % of the entire paste.
Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title
Photovoltaic [PV] energy · CPC title
Electricity · mapped topic
Electricity · mapped topic
for photovoltaic cells · CPC title
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