Methods for manufacturing integrated multi-layer magnetic films

Patent metadata

Field	Value
Publication number	US-9679958-B2
Application number	US-201615082260-A
Country	US
Kind code	B2
Filing date	Mar 28, 2016
Priority date	Dec 16, 2013
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

Methods of manufacture of integrated multi-layer magnetic films for use in passive devices in microelectronic applications. Soft ferromagnetic materials exhibiting high permeability and low coercivity are laminated together with insulating layers interposed. Electrical conductors coupled to interconnects are magnetically coupled to magnetic film layers to engender an inductor (self and mutual). Soft ferromagnetic materials are provided in an alternating array of parallel plate capacitors. Each alternating magnetic film is electrically coupled to either a primary or secondary electrical conductor interconnects and separated by an electrically insulating dielectric material. Alternatively, each alternating magnetic layer comprises an induced anisotropy material, which can also be combined with coiled conductor giving rise to a hybrid inductive/capacitive device. Also, soft ferromagnetic material are also selected and tuned to provide for FMR notch filtering.

First claim

What is claimed is:

1. A method of manufacturing comprising:
depositing a first magnetic layer on a semiconductor integrated circuit;
depositing an electrical insulator layer on said first magnetic layer;
depositing a first interface layer on said electrical insulator layer, wherein said first interface layer comprises at least one of tantalum, titanium, tungsten, chromium, or platinum;
depositing a second magnetic layer on said first interface layer;
forming a conductive winding around a planar magnetic core, said planar magnetic core comprising said first magnetic layer, said electrical insulator layer, said first interface layer and said second magnetic layer.

2. The method of claim 1 further comprising:
forming a first electrical connection between said first magnetic layer and a primary terminal; and
forming a second electrical connection between said second magnetic layer and a secondary terminal.

3. The method of claim 2 further comprising:
depositing a second electrical insulator layer on said second magnetic layer;
depositing a second interface layer on said second electrical insulator layer, wherein said second interface layer comprises at least one of tantalum, titanium, tungsten, chromium, or platinum;
depositing a third magnetic layer on said second interface layer; and
forming a third electrical connection between said third magnetic layer and said primary terminal.

4. The method of claim 3 further comprising:
depositing a third electrical insulator layer on said second magnetic layer;
depositing a third interface layer on said third electrical insulator layer, wherein said third interface layer comprises at least one of tantalum, titanium, tungsten, chromium, or platinum;
depositing a fourth magnetic layer on said third interface layer; and
forming a fourth electrical connection between said fourth magnetic layer and said secondary terminal.

5. The method of claim 1 wherein said first magnetic layer comprises a primary magnetic material having a relative permeability greater than about 500μ.

6. The method of claim 1 wherein said first magnetic layer comprises a first material and said the electrical insulator layer comprises an oxide of said first material.

7. The method of claim 1 wherein said first interface layer comprises a material that is selected to reduce a roughness at an interface between said electrical insulator layer and said second magnetic layer, said reduced roughness causing a reduced magnetic coercivity of said planar magnetic core.

8. The method of claim 1 wherein said first interface layer comprises a material that is selected to improve an adhesion at an interface between said electrical insulator layer and said second magnetic layer, said improved adhesion causing a reduced potential for film delamination at said interface.

9. The method of claim 1 wherein said first interface layer serves as a diffusion barrier between said electrical insulator layer and said second magnetic layer, said diffusion barrier preventing a diffusion of material constituents between said electrical insulator layer and said second magnetic layer.

10. The method of claim 1 wherein said first interface layer comprises a material that is selected to reduce a mechanical film stress in said planar magnetic core.

11. A method of manufacturing comprising:
depositing a first magnetic layer on a semiconductor integrated circuit;
depositing a first interface layer on said first magnetic layer, wherein said first interface layer comprises at least one of tantalum, titanium, tungsten, chromium, or platinum;
depositing a first electrical insulator layer on said first interface layer;
depositing a second interface layer on said first electrical insulator layer, wherein said second interface layer comprises at least one of tantalum, titanium, tungsten, chromium, or platinum;
depositing a second magnetic layer on said second interface layer; and
forming a conductive winding around a planar magnetic core, said planar magnetic core comprising said first magnetic layer, said first interface layer, said first electrical insulator layer, said second interface layer and said second magnetic layer.

12. The method of claim 11 wherein:
said first interface layer serves as a first diffusion barrier between said first electrical insulator layer and said first magnetic layer, said first diffusion barrier preventing a diffusion of material constituents between said first electrical insulator layer and said first magnetic layer; and
said second interface layer serves as a second diffusion barrier between said first electrical insulator layer and said second magnetic layer, said second diffusion barrier preventing a diffusion of material constituents between said first electrical insulator layer and said second magnetic layer.

13. The method of claim 11 wherein:
said first interface layer comprises a material that is selected to improve an adhesion at a first interface between said first electrical insulator layer and said first magnetic layer, said improved adhesion causing a reduced potential for film delamination at said first interface; and
said second interface layer comprises a material that is selected to improve an adhesion at a second interface between said first electrical insulator layer and said second magnetic layer, said improved adhesion causing a reduced potential for film delamination at said second interface.

14. The method of claim 11 wherein:
said first interface layer comprises a material that is selected to reduce a roughness at a first interface between said first electrical insulator layer and said first magnetic layer; and
said second interface layer comprises a material that is selected to reduce a roughness at a second interface between said first electrical insulator layer and said second magnetic layer,
said reduced roughness at said first and second interfaces causing a reduced magnetic coercivity of said planar magnetic core.

15. The method of claim 11 wherein each of said interface layers comprises a material that is selected to reduce a mechanical film stress in said planar magnetic core.

16. The method of claim 11 further comprising:
forming a first electrical connection between said first magnetic layer and a primary terminal; and
forming a second electrical connection between said second magnetic layer and a secondary terminal.

17. The method of claim 11 wherein each of said magnetic layers comprises a primary magnetic material having a relative permeability greater than about 500μ.

18. The method of claim 16 further comprising:
depositing a third interface layer on said second magnetic layer, wherein said third interface layer comprises at least one of tantalum, titanium, tungsten, chromium, or platinum;
depositing a second electrical insulator layer on said third interface layer;
depositing a fourth interface layer on said second electrical insulator layer, wherein said fourth interface layer comprises at least one of tantalum, titanium, tungsten, chromium, or platinum;
depositing a third magnetic layer on said fourth interface layer; and
forming a third electrical connection between said third magnetic layer and said primary terminal;
wherein said planar magnetic core comprises said first magnetic layer, said first interface layer, said first electrical insulator layer, said second interface layer, said second magnetic layer, said third interface layer, said second electrical insulator layer, said fourth interface layer, and said third magnetic layer.

Assignees

• Ferric Inc

Inventors

• Sturcken Noah Andrew
• Davies Ryan

Classifications

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10W44/501

  Inductive arrangements (H10W44/20 takes precedence) · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H01L2924/0002

  Electricity · mapped topic