Semiconductor device and solid-state image pickup unit
US-9219100-B2 · Dec 22, 2015 · US
US9679948B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9679948-B2 |
| Application number | US-201514615500-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 6, 2015 |
| Priority date | Aug 18, 2014 |
| Publication date | Jun 13, 2017 |
| Grant date | Jun 13, 2017 |
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Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color photo-sensing photoelectric conversion device, a first photodiode and a second photodiode disposed under the first color filter and the second color filter, respectively, a first light guide member disposed between the first color filter and the first photodiode, and a second light guide member disposed between the second color filter and the second photodiode.
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What is claimed is: 1. An image sensor, comprising: a color photo-sensing photoelectric conversion device, the color photo-sensing photoelectric conversion device including a first electrode; a first color filter and a second color filter under the color photo-sensing photoelectric conversion device; a first photodiode and a second photodiode under the first color filter and the second color filter, respectively, the first photodiode and the second photodiode being in a silicon substrate; a first light guide member between the first color filter and the first photodiode; a second light guide member between the second color filter and the second photodiode; and a connecting electrode configured to electrically contact the first electrode, and to block light, wherein the first light guide member and the second light guide member are formed substantially of a transparent material having a refractive index of about 1.8 to about 2.3 for light having a wavelength of 530 nm, and the transparent material includes at least one selected from ITO (indium tin oxide), IZO (indium zinc oxide), a titanium oxide, a siloxane derivative, and a polyimide derivative. 2. The image sensor of claim 1 , further comprising: a transmitting circuit portion under the silicon substrate. 3. The image sensor of claim 1 , further comprising: an insulation member between the first color filter and the second color filter, between the first photodiode and the second photodiode, and around the first light guide member and the second light guide member; and a circuit wire within the insulation member. 4. The image sensor of claim 1 , wherein a cross-section of the first and second light guide members narrows going from the color photo-sensing photoelectric conversion device toward the first color filter or the second color filter. 5. The image sensor of claim 1 , wherein the color photo-sensing photoelectric conversion device converts green light, the first color filter is a red light filter, and the second color filter is a blue light filter. 6. The image sensor of claim 1 , further comprising: a lens layer including a plurality of convex lenses on the color photo-sensing photoelectric conversion device, and at a position corresponding to the first color filter and the second color filter.
Electricity · mapped topic
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