Image sensors

Patent metadata

Field	Value
Publication number	US-9679935-B2
Application number	US-201514960449-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Jan 14, 2015
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

An image sensor may include a device isolation structure defining a plurality of pixel regions in a substrate and a photoelectric conversion element formed in each of the pixel regions. The device isolation structure may include an insulating gapfill layer extending from an upper portion to a lower portion of the device isolation structure, a spacer provided at the upper portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate, and a lower impurity region provided at the lower portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate.

First claim

What is claimed is:

1. An image sensor, comprising:
a substrate including a top surface and a bottom surface, and having a first conductivity type;
a device isolation structure defining a plurality of pixel regions in the substrate; and
a photoelectric conversion element formed in each of the pixel regions, and having a second conductivity type different from the first conductivity type,
wherein the device isolation structure comprises:
an insulating gapfill layer extending from an upper portion to a lower portion of the device isolation structure;
a spacer provided at the upper portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate;
a lower impurity region provided at the lower portion of the device isolation structure and interposed between the insulating gapfill layer and the substrate, the lower impurity region having the first conductivity type; and
an upper impurity region provided between the spacer and the insulating gapfill layer, the upper impurity region having the first conductivity type,
wherein the lower impurity region has an impurity concentration higher than that of the upper impurity region.

2. The image sensor of claim 1 , wherein the insulating gapfill layer is extended from the top surface of the substrate to the bottom surface of the substrate through the substrate.

3. The image sensor of claim 1 , further comprising a thin thermal oxide layer between the spacer and the substrate.

4. The image sensor of claim 1 , wherein the device isolation structure comprises a plurality of portions, each of which is shaped like a rectangular ring and encloses a corresponding of the pixel regions.

5. The image sensor of claim 1 , wherein a total height of the insulating gapfill layer of the device isolation structure is greater than that of the photoelectric conversion element, and
a total height of the spacer is smaller than that of the photoelectric conversion element.

6. The image sensor of claim 1 , wherein the spacer of the device isolation structure comprises at least one of middle temperature oxide (MTO), polyethylene oxide (PEOX), silicon nitride (SiN), and silicon oxynitride (SiON), and
the insulating gapfill layer of the device isolation structure comprises at least one of high density plasma (HDP) oxide, undoped silicate glass (USG), middle temperature oxide (MTO), plasma enhanced chemical vapor deposition (PECVD) oxide, and silicon nitride (SiN).

7. The image sensor of claim 1 , wherein a top surface of the spacer is substantially coplanar with the top surface of the substrate and/or a top surface of the insulating gapfill layer.

8. The image sensor of claim 1 , further comprising a readout circuit on the top surface of the substrate and electrically connected to the photoelectric conversion element.

9. The image sensor of claim 1 , further comprising:
a color filter on the bottom surface of the substrate to face a corresponding one of the pixel regions; and
a micro lens on the color filter.

10. The image sensor of claim 1 , wherein the insulating gapfill layer is self-aligned by the spacer.

11. An image sensor, comprising:
a substrate including a top surface and a bottom surface, the substrate having a first conductivity type;
a deep trench isolation (DTI) structure defining a plurality of pixel regions in the substrate;
a shallow trench isolation (STI) structure adjacent to the top surface of the substrate and on an upper side surface of the DTI structure to serve as a spacer;
a lower impurity region between a lower portion of the DTI structure and the substrate;
an upper impurity region between the DTI and STI structures; and
a photoelectric conversion element formed in each of the pixel regions,
wherein the lower impurity region has an impurity concentration higher than that of the upper impurity region.

12. The image sensor of claim 11 , wherein the DTI structure is self-aligned by the STI structure.

13. The image sensor of claim 11 , wherein the substrate has a first conductivity type,
the photoelectric conversion element has a second conductivity type different from the first conductivity type, and
the lower impurity region has the first conductivity type.

14. The image sensor of claim 11 , wherein the upper impurity region has the first conductivity type.

15. The image sensor of claim 11 , wherein the DTI structure is extended from the top surface of the substrate to the bottom surface of the substrate through the substrate.

16. The image sensor of claim 11 , wherein a top surface of the STI structure is substantially coplanar with a top surface of the substrate and/or a top surface of the DTI structure.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Um Changyong
• Park Byungjun
• Ahn Jungchak

Classifications

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title

• H10F39/8063

  Microlenses · CPC title

• H10F39/8053

  Colour filters · CPC title

• H10F39/807 Primary

  Pixel isolation structures · CPC title