On-chip terahertz thin-film devices
US-2024429627-A1 · Dec 26, 2024 · US
US9679869B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9679869-B2 |
| Application number | US-201213464775-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 4, 2012 |
| Priority date | Sep 2, 2011 |
| Publication date | Jun 13, 2017 |
| Grant date | Jun 13, 2017 |
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This disclosure relates to a transmission line for high performance radio frequency (RF) applications. One such transmission line can include a bonding layer configured to receive an RF signal, a barrier layer, a diffusion barrier layer, and a conductive layer proximate to the diffusion barrier layer. The diffusion barrier layer can have a thickness that allows a received RF signal to penetrate the diffusion barrier layer to the conductive layer. In certain implementations, the diffusion barrier layer can be nickel. In some of these implementations, the transmission line can include a gold bonding layer, a palladium barrier layer, and a nickel diffusion barrier layer.
Opening claim text (preview).
What is claimed is: 1. A radio frequency module comprising: a substrate including a transmission line having a bonding layer, a barrier layer, a diffusion barrier layer, and a conductive layer, the bonding layer having a bonding surface bonded with a wire bond, the barrier layer and the diffusion barrier layer configured to prevent a contaminant from entering the bonding layer, and the diffusion barrier layer being a nickel layer having a thickness that is less than about 0.35 um so as to allow substantially all of a radio frequency signal having a frequency of at least about 1.9 GHz received at the bonding surface to propagate in the conductive layer; a first radio frequency component implemented on a die coupled to the substrate, the first radio frequency component configured to provide the radio frequency signal having the frequency of at least 1.9 GHz to the wire bond, the wire bond extending from the die to the bonding surface of the transmission line; and a second radio frequency component coupled to the substrate, the second radio frequency component configured to receive the radio frequency signal having the frequency of at least about 1.9 GHz from the first radio frequency component via the transmission line. 2. The radio frequency module of claim 1 wherein the substrate has a finish plating that includes the bonding layer, the barrier layer, and the diffusion barrier layer. 3. The radio frequency module of claim 1 wherein the frequency of the radio frequency signal is at least 5 GHz. 4. The radio frequency module of claim 1 wherein the first radio frequency component is one of a filter or a radio frequency switch. 5. The radio frequency module of claim 1 wherein the first radio frequency component is a power amplifier. 6. The radio frequency module of claim 5 wherein the transmission line is configured to transmit the radio frequency signal from the power amplifier to a radio frequency switch. 7. The radio frequency module of claim 5 wherein the transmission line is configured to transmit the radio frequency signal from the power amplifier to a filter. 8. The radio frequency module of claim 1 wherein the second radio frequency component is one of a radio frequency switch, a filter, or an antenna. 9. The radio frequency module of claim 1 wherein the bonding layer is a gold layer and the barrier layer is a palladium layer. 10. The radio frequency module of claim 9 wherein the thickness of the nickel layer is in the range from about 0.04 um to about 0.2 um. 11. The radio frequency module of claim 9 wherein the thickness of the nickel layer is less than a skin depth of the nickel layer at a frequency of about 1.9 GHz. 12. The radio frequency module of claim 9 wherein the substrate has a finish plating that includes the gold layer, the palladium layer, and the nickel layer. 13. The radio frequency module of claim 1 wherein the conductive layer includes copper and the contaminant includes copper from the conductive layer. 14. The radio frequency module of claim 1 wherein the thickness of the diffusion barrier layer is in the range from about 0.04 um to a skin depth of the nickel layer at a frequency of about 1.9 GHz. 15. The radio frequency module of claim 1 wherein the bonding layer is a gold layer having a thickness in a range from about 0.05 um to about 0.15 um. 16. The radio frequency module of claim 1 wherein the thickness of the diffusion barrier layer is less than a skin depth of the nickel layer at a frequency of about 5 GHz. 17. A radio frequency module comprising: a substrate including a transmission line having a gold layer, a palladium layer proximate the gold layer, a nickel layer proximate the palladium layer, and a conductive layer proximate the nickel layer, the gold layer having a bonding surface bonded with a wire bond, and the nickel layer having a thickness that is less than 0.35 um; a first radio frequency component implemented on a die coupled to the substrate, the first radio frequency component configured to provide a radio frequency signal to the wire bond, the wire bond extending from the die to the bonding surface of the transmission line; and a second radio frequency component coupled to the substrate, the second radio frequency component configured to receive the radio frequency signal from the first radio frequency component via the transmission line. 18. The radio frequency module of claim 17 wherein the conductive layer is a copper layer. 19. The radio frequency module of claim 17 wherein the radio frequency signal has a frequency of at least 1.9 GHz and the thickness of the nickel layer is less than a skin depth of the nickel layer at 1.9 GHz. 20. The radio frequency module of claim 17 wherein the thickness of the nickel layer is in the range from about 0.04 um to about 0.2 um. 21. The radio frequency module of claim 17 wherein the radio frequency signal has a frequency of at least 5 GHz. 22. The radio frequency module of claim 17 wherein the gold layer has a thickness in a range from 0.05 um to 0.15 um. 23. The radio frequency module of claim 17 wherein the conductive layer has a thickness in a range from about 10 um to 50 um. 24. A radio frequency module comprising: a substrate including a transmission line having a gold layer with a thickness in a range from 0.05 um to 0.15 um, a palladium layer proximate the gold layer, a nickel layer proximate the palladium layer, and a conductive layer proximate the nickel layer, the gold layer having a bonding surface bonded with a wire bond, and the nickel layer having a thickness that is at least 0.04 um and less than 0.35 um; a first radio frequency component implemented on a die coupled to the substrate, the first radio frequency component configured to provide a radio frequency signal having a frequency of at least 5 GHz to the wire bond, the wire bond extending from the die to the bonding surface of the transmission line; and a second radio frequency component coupled to the substrate, the second radio frequency component configured to receive the radio frequency signal from the first radio frequency component via the transmission line. 25. The radio frequency module of claim 24 wherein the first radio frequency component includes a power amplifier. 26. The radio frequency module of claim 24 wherein the thickness of the nickel layer is in a range from about 0.04 um to about 0.2 um.
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