Voltage nonlinear resistive element and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9679685-B2
Application number	US-201514662669-A
Country	US
Kind code	B2
Filing date	Mar 19, 2015
Priority date	Mar 19, 2014
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

The voltage nonlinear resistive element includes a resistor containing a joined body in which a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of less than 1.0×10 −2 Ωcm is joined to a rare-earth metal oxide layer composed mainly of a rare-earth metal oxide, and a pair of electrodes disposed on the resistor such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer and the rare-earth metal oxide layer. In this element, the zinc oxide ceramic layer of the joined body has a lower volume resistivity than before. This can result in a lower clamping voltage in a high electric current region than before.

First claim

What is claimed is:

1. A voltage nonlinear resistive element including:
a voltage nonlinear resistor containing at least two joined bodies in each of which a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of less than 1.0×10 −2 Ωcm is joined to a rare-earth metal oxide layer composed mainly of a rare-earth metal oxide, and
a pair of electrodes disposed on the voltage nonlinear resistor such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer and the rare-earth metal oxide layer,
wherein (i) a rare-earth metal oxide layer and a conductor layer, or (ii) a rare-earth metal oxide layer, a conductor layer and a rare-earth metal oxide layer are disposed between adjacent zinc oxide ceramic layers.

2. The voltage nonlinear resistive element according to claim 1 , wherein the zinc oxide ceramic layer contains one or more selected from the group consisting of Al 2 O 3 , In 2 O 3 , and Ga 2 O 3 .

3. The voltage nonlinear resistive element according to claim 1 , wherein the rare-earth metal oxide layer is formed on the zinc oxide ceramic layer by sputtering.

4. A method for manufacturing a voltage nonlinear resistive element including the steps of;
(a) producing a joined body by forming a rare-earth metal oxide layer composed mainly of a rare-earth metal oxide on a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of less than 1.0×10 −2 Ωcm by sputtering,
(b) producing a layered voltage nonlinear resistor by preparing at least two of the joined bodies, stacking the joined bodies with a conductor foil interposed between the rare-earth metal oxide layer of one of the joined bodies and the rare-earth metal oxide layer of the other of the joined bodies, or directly stacking the joined bodies without anything interposed therebetween, and joining the joined bodies in this state by heat treatment in an inert atmosphere at a temperature in the range of 300° C. to 700° C., and
(c) forming a pair of electrodes such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer and the rare-earth metal oxide layer.

5. A method for manufacturing a voltage nonlinear resistive element including the steps of;
(a) producing a joined body by forming a rare-earth metal oxide layer composed mainly of a rare-earth metal oxide on a zinc oxide ceramic layer composed mainly of zinc oxide and having a volume resistivity of less than 1.0×10 −2 Ωcm by sputtering,
(b) producing a layered voltage nonlinear resistor by preparing at least two of the joined bodies, stacking the joined bodies with a conductor foil interposed between the rare-earth metal oxide layer of one of the joined bodies and the zinc oxide ceramic layer of the other of the joined bodies, or directly stacking the joined bodies without anything interposed therebetween, and joining the joined bodies in this state by heat treatment in an inert atmosphere at a temperature in the range of 300° C. to 700° C., and
(c) forming a pair of electrodes such that an electrically conductive path passes through a junction between the zinc oxide ceramic layer and the rare-earth metal oxide layer.

6. The method for manufacturing the voltage nonlinear resistive element according to claim 4 , wherein the heat treatment in the step (b) is performed at a temperature in the range of 300° C. to 500° C.

7. The method for manufacturing the voltage nonlinear resistive element according to claim 5 , wherein the heat treatment in the step (b) is performed at a temperature in the range of 300° C. to 500° C.

Assignees

• Ngk Insulators Ltd

Inventors

• Yamazaki Satoshi
• Hayase Toru
• Morimoto Kenji
• Kawasaki Shinji
• Takeuchi Yukihisa

Classifications

• C04B2235/322

  Transition aluminas, e.g. delta or gamma aluminas · CPC title

• C04B37/006

  consisting of metals or metal salts · CPC title

• Y10T29/49082

  Resistor making · CPC title

• C04B2235/658

  Atmosphere during thermal treatment · CPC title

• C04B2235/5454

  nanometer sized, i.e. below 100 nm · CPC title