Carrier-depletion based silicon waveguide resonant cavity modulator with integrated optical power monitor

Patent metadata

Field	Value
Publication number	US-9678370-B2
Application number	US-201414338564-A
Country	US
Kind code	B2
Filing date	Jul 23, 2014
Priority date	Jul 23, 2013
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

A carrier-depletion based silicon waveguide resonant cavity modulator includes a silicon waveguide based resonant cavity. The resonant cavity includes an optical modulation section and an optical power monitoring section. The optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I region having a high defect density and a low net free carrier concentration. The doping compensated I region may be formed by performing a P-type implantation step and an N-type implantation step with overlapping ion implantation windows.

First claim

The invention claimed is:

1. A carrier-depletion based silicon waveguide resonant cavity modulator comprising:
a silicon waveguide based resonant cavity, wherein the resonant cavity includes an optical modulation section and an optical power monitoring section,
wherein the optical power monitoring section includes an integrated lateral PIN diode including a doping compensated I-region having a high defect density,
wherein the doping compensated I-region is formed by performing a P-type ion implantation in the I-region and an N-type ion implantation in the I-region.

2. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 1 , wherein the lateral PIN diode comprises a P-doped region having a net P-type doping concentration, an N-doped region having a net N-type doping concentration, and the doping compensated I-region is between the P-doped region and the N-doped region, wherein the I-region has a net doping concentration that is lower than the net P-type doping concentration and lower than the net N-type concentration.

3. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 2 , wherein the doping compensated region is an intrinsic region.

4. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 3 , wherein the resonant cavity includes a micro-ring resonator.

5. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 3 , wherein the resonant cavity comprises a Fabry-Pérot cavity.

6. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 4 , wherein micro-ring resonator includes an etched portion and an unetched portion, and wherein P-doped region, the N-doped region, and the I-region extend into the unetched portion.

7. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 4 , wherein the optical modulation section includes an integrated PN junction formed by a second P-doped region and a second N-doped region.

8. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 7 , wherein micro-ring resonator includes an etched portion and an unetched portion, and wherein the PN junction formed by the second P-doped region and the second N-doped region is disposed in the unetched portion.

9. The carrier-depletion based silicon waveguide resonant cavity modulator according to claim 8 , wherein first P-doped region, the first N-doped region, and the I-region extend into the unetched portion.

Assignees

• Imec Vzw
• Univ Gent

Inventors

• Hui Yu
• Bogaerts Wim

Classifications

• G02F1/0121

  Operation of devices; Circuit arrangements, not otherwise provided for in this subclass · CPC title

• G02F1/3132

  of directional coupler type · CPC title

• G02F2201/58

  Arrangements comprising a monitoring photodetector · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F2203/15

  involving resonance effects, e.g. resonantly enhanced interaction · CPC title