Power module with integrated current sensor

Patent metadata

Field	Value
Publication number	US-9678173-B2
Application number	US-201313886352-A
Country	US
Kind code	B2
Filing date	May 3, 2013
Priority date	May 3, 2013
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

A power module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. The semiconductor die has a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate. The power module further includes a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate. The sensor is aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure a magnetic field generated by the first metal region.

First claim

What is claimed is:

1. A power module, comprising:
a first substrate having a metallized side;
a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate;
a semiconductor die interposed between the first and second substrates, the semiconductor die having a first side connected to the metallized side of the first substrate and an opposing second side connected to the metallized side of the second substrate; and
a sensor connected to the metallized side of the first substrate and galvanically isolated from the metallized side of the second substrate, the sensor aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure a magnetic field generated by the first metal region responsive to a current flowing through the first metal region.

2. The power module of claim 1 , wherein the second side of the semiconductor die is electrically connected to a second metal region of the metallized side of the second substrate, and wherein the second metal region is connected to the first metal region.

3. The power module of claim 1 , wherein the first substrate comprises a plurality of conductive regions, wherein the first side of the semiconductor die is connected to one of the conductive regions, and wherein the sensor is connected to one or more different ones of the conductive regions that the semiconductor die.

4. The power module of claim 3 , further comprising:
an electrical isolation material having a first side attached to a side of the conductive region facing away from the semiconductor die, and a second side opposing the first side; and
a heat sink attached to the second side of the electrical isolation material.

5. The power module of claim 1 , wherein the first substrate comprises an electrical isolation material with a metallized first side and an opposing metallized second side, and wherein the first side of the semiconductor die and the sensor are connected to the first metallized side of the electrical isolation material.

6. The power module of claim 5 , wherein the second substrate comprises an electrical isolation material with a metallized first side facing the first substrate and an opposing metallized second side, wherein the second side of the semiconductor die is connected to the first metallized side of the electrical isolation material of the second substrate, and wherein the sensor is galvanically isolated from the first metallized side of the electrical isolation material of the second substrate.

7. The power module of claim 6 , wherein the second side of the semiconductor die is connected to the first metallized side of the electrical isolation material of the second substrate by a metal block interposed between the semiconductor die and the second substrate.

8. The power module of claim 6 , wherein the second metallized side of the electrical isolation material of the second substrate is of a single continuous construction.

9. The power module of claim 6 , further comprising:
a first heat sink attached to the second metallized side of the electrical isolation material of the first substrate; and
a second heat sink attached to the second metallized side of the electrical isolation material of the second substrate.

10. The power module of claim 6 , further comprising a mold compound encapsulating the first and second substrates, the semiconductor die and the sensor, wherein the second metallized side of the electrical isolation material of the first substrate and the second metallized side of the electrical isolation material of the second substrate remain uncovered by the mold compound at opposing sides of the power module.

11. The power module of claim 1 , wherein the second substrate comprises a first metal clip connected to the second side of the semiconductor die and a second metal clip under which the sensor is aligned and galvanically isolated.

12. The power module of claim 1 , wherein the sensor is connected to the metallized side of the first substrate by a metal block interposed between the sensor and the first substrate.

13. The power module of claim 1 , wherein the sensor is a Hall sensor.

14. The power module of claim 13 , wherein the Hall sensor is a differential Hall sensor comprising two Hall plates, each Hall plate positioned in the same plane and aligned with the first metal region of the second substrate so that the magnetic field generated by the first metal region intersects both Hall plates.

15. A method of manufacturing a power module, the method comprising:
attaching a first side of a semiconductor die to a metallized side of a first substrate and an opposing second side of the semiconductor die connected to a metallized side of a second substrate with the semiconductor die interposed between the first and second substrates; and
attaching a sensor to the metallized side of the first substrate so that the sensor is galvanically isolated from the metallized side of the second substrate and aligned with a first metal region of the metallized side of the second substrate so that the sensor can measure the magnetic field generated by the first metal region.

16. The method of claim 15 , wherein the first substrate comprises an electrical isolation material with a metallized first side and an opposing metallized second side, and wherein the first side of the semiconductor die and the sensor are connected to the first metallized side of the electrical isolation material.

17. The method of claim 16 , wherein the second substrate comprises an electrical isolation material with a metallized first side facing the first substrate and an opposing metallized second side, wherein the second side of the semiconductor die is connected to the first metallized side of the electrical isolation material of the second substrate, and wherein the sensor is galvanically isolated from the first metallized side of the electrical isolation material of the second substrate.

18. The method of claim 16 , further comprising encapsulating the first and second substrates, the semiconductor die and the sensor with a mold compound so that the second metallized side of the electrical isolation material of the first substrate and the second metallized side of the electrical isolation material of the second substrate remain uncovered by the mold compound at opposing sides of the power module.

19. The method of claim 15 , wherein the sensor is connected to the metallized side of the first substrate by a metal block interposed between the sensor and the first substrate.

Assignees

• Infineon Technologies Ag

Inventors

• Castro Serrato Carlos

Classifications

• H10W90/763

  between laterally-adjacent chips · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/111

  the semiconductor body being completely enclosed · CPC title