Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target, assembly of the sputtering target-backing plate, and process for producing the same

Patent metadata

Field	Value
Publication number	US-9677170-B2
Application number	US-30231908-A
Country	US
Kind code	B2
Filing date	Jan 30, 2008
Priority date	Feb 9, 2007
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

Provided is a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride comprising a structure in which a target material formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride and a high-melting point metal plate other than the target material are bonded. Additionally provided is a production method of such a target capable of producing, with relative ease, a target formed of a sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride or high-melting point metal boride, which has poor machinability, can relatively easily produced. Further the generation of cracks during the target production and high power sputtering, and the reaction of the target raw material with the die during hot pressing can be inhibited effectively, and the warpage of the target can be reduced.

First claim

The invention claimed is:

1. A composite sputtering target, comprising:
a sputtering target plate comprising a sintered body formed of a powder of a sinter-resistant material selected from the group consisting of an alloy of a high-melting point metals, a silicide of a high-melting point metal, a carbide of a high-melting point metal, a nitride of a high-melting point metal, and a boride of a high-melting point metal, the high-melting point metals constituting the alloy or the high melting point metal forming the silicide, carbide, nitride, or boride having a melting point of 1700° C. or higher; and
a secondary plate of a high-melting point metal diffusion bonded to the sputtering target plate, the secondary plate having a thickness of 2 to 6 mm, said high-melting point metal for forming the secondary plate being different from the high-melting point metal which is used to make the alloy or the silicide, carbide, nitride, or boride forming the sputtering target plate, and having a melting point of 1700° C. or higher;
wherein the composite sputtering target is bonded to a backing plate to form a composite sputtering target-backing plate assembly such that the backing plate forms a part of a laminated structure of the composite sputtering target-backing plate assembly; and
wherein said sintered body is made of a material selected from the group consisting of tungsten-rhenium alloy (W-Re), niobium-osmium alloy (Nb-Os), tungsten carbide (WC), tantalum carbide (TaC), zirconium boride (ZrB 2 ), tantalum silicide (TaSi 2 ), tungsten silicide (WSi 2 ), titanium nitride (TiN), and tantalum nitride (TaN).

2. The composite sputtering target according to claim 1 , wherein the high-melting point metal of the secondary plate is tantalum, niobium, vanadium, titanium or molybdenum, or an alloy comprising one of tantalum, niobium, vanadium, titanium and molybdenum as a main component of the alloy.

3. The composite sputtering target, according to claim 1 , wherein the sputtering target plate and the secondary plate form a bilaminar structure, and wherein a face of the secondary plate and a face of the sputtering target plate are diffusion bonded together and of the same size.

4. The composite sputtering target according to claim 1 , wherein the high-melting point metal of the secondary plate is selected from the group consisting of tantalum, niobium, vanadium, molybdenum, and an alloy comprising one of tantalum, niobium, vanadium, and molybdenum as a main component of the alloy.

5. A sputtering target-backing plate assembly comprising:
a sputtering target comprising a sintered body formed of a powder of a sinter-resistant material selected from the group consisting of an alloy of a high-melting point metals, a silicide of a high-melting point metal, a carbide of a high-melting point metal, a nitride of a high-melting point metal, and a boride of a high-melting point metal, the sputtering target being in a shape of a plate, and the high-melting point metals constituting the alloy or the high melting point metal forming the silicide, carbide, nitride, or boride having a melting point of 1700° C. or higher;
a secondary plate of a high-melting point metal diffusion bonded to the sputtering target, the secondary plate having a thickness of 2 to 6 mm, said high-melting point metal of the secondary plate being different from the high-melting point metals constituting the alloy or from the high melting point metal forming the silicide, carbide, nitride, or boride, and having a melting point of 1700° C. or higher; and
a backing plate bonded directly or indirectly via a layer of an insert material to the secondary plate opposite the sputtering target, the insert material being formed of aluminum or an alloy having aluminum as its main component, and the backing plate being formed of copper or copper alloy;
wherein said secondary plate is made of tantalum, niobium, vanadium, titanium, molybdenum, or an alloy having one of tantalum, niobium, vanadium, titanium, and molybdenum as a main component of the alloy; and
wherein said sintered body js made of a material selected from the group consisting of tungsten-rhenium alloy (W-Re), niobium-osmium alloy (Nb-Os), tungsten carbide (WC), tantalum carbide (TaC), zirconium boride (ZrB 2 ), tantalum silicide (TaSi 2 ), tungsten silicide (WSi 2 ), titanium nitride (TiN), and tantalum nitride (TaN).

6. The sputtering target-backing plate assembly according to claim 5 , wherein the layer of the insert material has a thickness of 1 to 4 mm.

7. A sputtering target-backing plate assembly according to claim 5 , wherein said secondary plate consists of tantalum, niobium, vanadium, molybdenum, or an alloy having one of tantalum, niobium, vanadium, and molybdenum as a main component of the alloy.

8. A production method of a composite sputtering target including a sputtering target comprising a sintered body formed of a powder of a sinter-resistant material selected from the group consisting of an alloy of high-melting point metals, a silicide of a high-melting point metal, a carbide of a high-melting point metal, a nitride of a high-melting point metal, and a boride of a high-melting point metal, comprising the steps of:
placing a secondary plate having a thickness of 2 to 6 mm and made of a high-melting point metal different from the high-melting point metals constituting the alloy or the high melting point metal of the silicide, carbide, nitride or boride of the sputtering target in a die,
filling the die with powder formed of the alloy of high-melting point metals or the silicide, carbide, nitride or boride of the high-melting point metal of the sinter-resistant material of the sputtering target, the high-melting point metal or metals of the sputtering target having a melting point of 1700° C. or higher,
additionally inserting a further secondary plate made of a high-melting point metal different from the metal or metals of the sputtering target on the filled powder to obtain a trilaminar structure,
subsequently subjecting the trilaminar structure to pressing and diffusion bonding such that the powder of the sinter-resistant material in the die is converted to a sintered plate,
removing the trilaminar structure from the die, and bonding the trilaminar structure to a backing plate formed of copper or a copper alloy plate via an insert material formed of aluminum or an alloy having aluminum as its main component, and
machining and eliminating the further secondary plate to obtain the composite sputtering target, wherein the high melting point metal of the secondary plate and the high melting point metal of the further secondary plate used in the placing and inserting steps have a melting point of 1700° C. or higher,
wherein said machining and eliminating steps are performed after said step of bonding the trilaminar structure to the backing plate; and
wherein said sintered body of said sputtering target is made of a material selected from the group consisting of tungsten-rhenium alloy (W-Re), niobium-osmium alloy (Nb-Os), tungsten carbide (WC), tantalum carbide (TaC), zirconium boride (ZrB 2 ), tantalum silicide (TaSi 2 ), tungsten silicide (WSi 2 ), titanium nitride (TiN), and tantalum nitride (TaN).

9. The production method according to claim 8 , wherein the secondary plate is made of tantalum, niobium, vanadium, titanium or molybdenum, or an alloy comprising one of tantalum, niobium, vanadium, titanium and molybdenum as a main component of the alloy.

10. The production method according to claim 9 , wherein a graphite die is used and the secondary plate is subject to diffusion bonding at a temperature of 1000 to 2000° C.

11. The production method according to claim 8 , wherein the bonding of

Assignees

• Yamakoshi Yasuhiro
• Jx Nippon Mining & Metals Corp

Inventors

• Yamakoshi Yasuhiro

Classifications

• B22F2302/45

  Others, including non-metals · CPC title

• C23C14/0635

  Carbides · CPC title

• C04B2237/708

  of one or more of the interlayers · CPC title

• C04B2237/36

  Non-oxidic · CPC title

• C23C14/14

  Metallic material, boron or silicon · CPC title