Method of forming metal bonding layer and method of manufacturing semiconductor light emitting device using the same

Patent metadata

Field	Value
Publication number	US-9676047-B2
Application number	US-201414569402-A
Country	US
Kind code	B2
Filing date	Dec 12, 2014
Priority date	Mar 15, 2013
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

A method of forming a metal bonding layer includes forming first and second bonding metal layers on one surfaces of first and second bonding objects, respectively. The second bonding object is disposed on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other. A eutectic metal bonding layer is formed through a reaction between the first and second bonding metal layers. At least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer formed on an upper surface thereof. The oxidation prevention layer is formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface which the oxidation prevention layer is disposed.

First claim

What is claimed is:

1. A method of forming a metal bonding layer, the method comprising:
forming first and second bonding metal layers on one surface of first and second bonding objects, respectively, such that at least one of the first bonding metal layer and the second bonding metal layer includes:
a first reaction layer formed on one surface of the first or second bonding object and containing a first metal,
a second reaction layer formed on the first reaction layer and containing a second metal for reacting with the first metal to provide a eutectic metal, and
a reaction delay layer positioned between the first reaction layer and the second reaction layer so as to delay a first reaction between the first metal and the second metal, and containing a metal selected from the group consisting of Ti, W, Cr, Ta and an alloy thereof;

disposing the second bonding object on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other; and
forming a eutectic metal bonding layer through a second reaction between the first and second bonding metal layers, the second reaction including the first reaction between the first metal and the second metal,
wherein at least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer disposed on an upper surface thereof, the oxidation prevention layer being formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface of which the oxidation prevention layer is disposed.

2. The method of claim 1 , wherein the first bonding metal layer contains a metal selected from the group consisting of Sn, In, Zn, Bi, Pb, Ni, Au, Pt, Cu, Co, and an alloy thereof and the second bonding metal layer contains a metal selected from the group consisting of Sn, In, Zn, Bi, Pb, Ni, Au, Pt, Cu, Co, and an alloy thereof.

3. The method of claim 2 , wherein:
the oxidation prevention layer is formed of a material different from a material of the bonding metal layer on the upper surface of which the oxidation prevention layer is disposed, and
the oxidation prevention layer contains a metal selected from the group consisting of Pd, Pt, Ru, Rh, Ag, Os, Ir, Au and an alloy thereof.

4. The method of claim 3 , wherein the oxidation prevention layer has a thickness of about 10 Å to about 100 Å.

5. The method of claim 1 , wherein the at least one of the first bonding metal layer and the second bonding metal layer includes:
a first reaction layer formed on one surface of the first or second bonding object and containing at least one metal selected from the group consisting of Ni, Pt, Au, Cu and Co, and
a second reaction layer formed on the first reaction layer, so as to react with the metal of the first reaction layer to provide a eutectic metal, and containing a metal selected from the group consisting of Sn, In, Zn, Bi, Au, Co and an alloy thereof.

6. The method of claim 5 , wherein the at least one of the first bonding metal layer and the second bonding metal layer further includes a reaction delay layer positioned between the first reaction layer and the second reaction layer and containing a metal selected from the group consisting of Ti, W, Cr, Ta and an alloy thereof.

7. A method of manufacturing a semiconductor light emitting device, the method comprising:
preparing a light emitting laminate in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially formed on a semiconductor growth substrate;
forming a first bonding metal layer on the light emitting laminate and forming a second bonding metal layer on a permanent substrate, such that at least one of the first bonding metal layer and the second bonding metal layer includes:
a first reaction layer formed on one surface of the light emitting laminate or the permanent substrate and containing a first metal,
a second reaction layer formed on the first reaction layer and containing a second metal for reacting with the first metal to provide a eutectic metal, and
a reaction delay layer positioned between the first reaction layer and the second reaction layer so as to delay a first reaction between the first metal and the second metal, and containing a metal selected from the group consisting of Ti, W, Cr, Ta and an alloy thereof;

disposing the light emitting laminate on the permanent substrate such that the first bonding metal layer and the second bonding metal layer come into contact with each other; and
forming a eutectic metal bonding layer through a second reaction between the first bonding metal layer and the second bonding metal layer to bond the light emitting laminate and the permanent substrate to each other, the second reaction including the first reaction between the first metal and the second metal,
wherein the at least one of the first bonding metal layer and the second bonding metal layer includes an oxidation prevention layer disposed on an upper surface thereof, the oxidation prevention layer being formed of a metal having an oxidation reactivity lower than an oxidation reactivity of the bonding metal layer on the upper surface of which the oxidation prevention layer is disposed.

8. The method of claim 7 , further comprising: after the forming of the eutectic metal bonding layer, removing the semiconductor growth substrate from the light emitting laminate.

9. The method of claim 7 , wherein:
the oxidation prevention layer is formed of a material different from a material of the bonding metal layer on the upper surface of which the oxidation prevention layer is disposed, and
the oxidation prevention layer contains a metal selected from the group consisting of Pd, Pt, Ru, Rh, Ag, Os, Ir, Au and an alloy thereof.

10. The method of claim 7 , wherein the oxidation prevention layer has a thickness of about 10 Å to about 100 Å.

11. The method of claim 7 , wherein the at least one of the first bonding metal layer and the second bonding metal layer includes:
a first reaction layer formed on one surface of the light emitting laminate or the permanent substrate and containing at least one metal selected from the group consisting of Ni, Pt, Au, Cu and Co, and
a second reaction layer formed on the first reaction layer, so as to react with the metal of the first reaction layer to provide a eutectic metal, and containing a metal selected from the group consisting of Sn, In, Zn, Bi, Au, Co and an alloy thereof.

12. A method of forming a metal bonding layer, the method comprising:
forming, on a surface of a first bonding object, a first bonding metal layer including:
a first reaction layer formed on one surface of the first bonding object and containing a first metal selected from the group consisting of Ni, Pt, Au, Cu and Co,
a second reaction layer formed on the first reaction layer, so as to react with the first metal of the first reaction layer to provide a eutectic metal, and containing a metal selected from the group consisting of Sn, In, Zn, Bi, Au, Co and an alloy thereof, and
a reaction delay layer interposed between the first and second reaction layers, so as to delay a first reaction between the first metal and the second metal and containing a metal selected from the group consisting of Ti, W, Cr, Ta and an alloy thereof;
forming, on a surface of a second bonding object, a second bonding metal layer including a first reaction layer and a second reaction layer;
disposing the second bonding object on the first bonding object such that the first bonding metal layer and the second bonding metal layer face each other; and
applying heat to

Assignees

• Samsung Electronics Co Ltd

Inventors

• Ryu Yung Ho
• Choi Seung Woo
• Kim Tae Hun
• Park Gyeong Seon
• Lim Jong Hoon
• Kim Sung Joon
• Cho Myong Soo

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/732

  between stacked chips · CPC title

• H10W72/07352

  changes in structures or sizes · CPC title

• H10W72/07336

  Soldering or alloying · CPC title

• H10W72/07307

  the auxiliary member being a temporary substrate, e.g. a removable substrate · CPC title