2DEG-based sensor and device for ECG sensing

Patent metadata

Field	Value
Publication number	US-9675262-B2
Application number	US-201414265088-A
Country	US
Kind code	B2
Filing date	Apr 29, 2014
Priority date	Apr 29, 2013
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

The disclosed technology generally relates to sensors comprising a two-dimensional electron gas (2DEG), and more particularly to an AlGaN/GaN 2DEG-based sensor for sensing signals associated with electrocardiograms, and methods of using the same. In one aspect, a sensor comprises a substrate and a GaN/AlGaN hetero-junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure. The sensor additionally comprises Ohmic contacts connected to electrical metallizations and to the 2DEG channel, wherein the GaN/AlGaN hetero-junction structure has a recess formed between the Ohmic contacts. The sensor further comprises a dielectric layer formed on a top surface of the sensor.

First claim

What is claimed is:

1. A sensor comprising:
a substrate;
a GaN/AlGaN hetero junction structure formed on the substrate and configured to form a two-dimensional electron gas (2DEG) channel within the GaN/AlGaN hetero-junction structure;
Ohmic contacts connected to electrical metallizations and partly extending through the GaN/AlGaN hetero junction structure to directly contact the 2DEG channel,
wherein a recess is formed in the GaN/AlGaN hetero junction structure between the Ohmic contacts; and
a dielectric layer formed on a top surface of the sensor and over the recess, the dielectric layer extending to cover the Ohmic contacts and the electrical metallizations.

2. The sensor according to claim 1 , further comprising an extended gate material formed on a top surface of the dielectric layer and in the recess of the GaN/AlGaN hetero junction structure.

3. The sensor according to claim 1 , further comprising a cavity closure element configured to enclose a cavity formed between the cavity closure element and a top surface of the of the dielectric layer, wherein the cavity is configured to be filled with a liquid.

4. A method of using the sensor according to claim 1 for ECG detection, comprising applying the sensor in sufficiently close proximity to a single body skin point such that, during an electrophysiological heart function polarization cycle, the electrical body charge interacts with the 2DEG channel and causes a conductivity of the 2DEG channel to change.

5. The sensor according to claim 2 , further comprising an electrode stack formed on a top surface of the extended gate material.

6. The sensor according to claim 3 , wherein the cavity closure element is formed of a conductive polymer.

7. The sensor according to claim 3 , wherein the cavity is filed with one of nitrogen gas or an electrolyte.

8. The device according to claim 4 , wherein applying the sensor in sufficiently close proximity to the single body skin point comprises applying the sensor in direct contact with the single body skin point.

9. A device for ECG sensing comprising:
at least one sensor each according to the sensor of claim 5 , wherein the at least one sensor is arranged so that one of the recess of the GaN/AlGaN hetero junction structure, the extended gate material or the electrode stack is configured to be coupled to a body skin point within a sufficiently close proximity such that, during an electrophysiological heart function polarization cycle, the electrical body charge interacts with the 2DEG channel and causes a conductivity of the 2DEG channel to change.

10. A method for detecting a signal associated with an electrocardiogram (ECG), comprising:
applying the sensor according to claim 5 such that one of the recess of the GaN/AlGaN hetero junction structure, the extended gate material or the electrode stack is in direct contact or sufficiently close to a certain living being's body skin point, such that the body charge interacts with the sensor's 2DEG channel; and
detecting a conductivity change within the 2DEG channel during an electrophysiological heart polarization cycle of a living being.

11. The sensor according to claim 6 , wherein the cavity further comprises an extended gate material formed on an inner surface of the cavity closure element.

12. The device according to claim 9 , wherein the at least one sensor is configured such that one of the GaN/AlGaN hetero junction recessed area, the extended gate material or the electrode stack is configured to be in direct contact with the body skin point.

13. The device according to claim 9 , wherein the body skin point comprises a single body skin point.

14. The device according to claim 9 , wherein the ECG sensing comprises a charge-based non-differential ECG sensing.

15. The device according to claim 9 , comprising a plurality of sensors according to claim 1 connected in series or in parallel and configured for combined ECG detection.

16. The device according to claim 9 , wherein the at least one sensor is configured to be under the influence of a magnetic field.

17. The device according to claim 9 further configured for calculating a blood pressure value based on ECG detection.

18. A patch-worn or a wrist-worn apparatus comprising the device according to claim 9 .

19. The method according to claim 10 , wherein detecting the signal associated with the ECG comprises detecting a signal associated with a charge-based non-differential ECG.

20. The device according to claim 15 , further configured for noise cancellation.

Assignees

• Stichting Imec Nederland

Inventors

• Vitushinsky Roman
• Offermans Peter

Classifications

• A61B5/263

  characterised by the electrode materials · CPC title

• A61B5/256

  Wearable electrodes, e.g. having straps or bands · CPC title

• A61B5/28 Primary

  for electrocardiography [ECG] · CPC title

• H01L29/7786

  Electricity · mapped topic

• A61B5/02125

  of pulse wave propagation time · CPC title