Concurrent dual-band signal amplifier

Patent metadata

Field	Value
Publication number	US-9673765-B2
Application number	US-201514972372-A
Country	US
Kind code	B2
Filing date	Dec 17, 2015
Priority date	Dec 26, 2014
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A signal amplifier includes a band suppression filter configured to suppress a preset band among bands included in an input signal, a first common source-type amplifier connected between a supply terminal of a driving voltage and a ground terminal and configured to amplify a first input signal separated from an output signal of the band suppression filter in a common input node to provide a first amplified signal to a common output node, a second common source-type amplifier configured to amplify a second input signal separated from the output signal of the band suppression filter in the common input node to provide a second amplified signal to the common output node, and an output matcher configured to match levels of impedance between the common output node and an output terminal and to transfer a combined signal to the output terminal.

First claim

What is claimed is:

1. A signal amplifier comprising:
a band suppression filter configured to suppress a preset band among bands included in an input signal;
a first common source-type amplifier connected between a supply terminal of a driving voltage and a ground terminal and configured to amplify a first input signal separated from an output signal of the band suppression filter in a common input node to provide a first amplified signal to a common output node;
a second common source-type amplifier stacked between the supply terminal of the driving voltage and the ground terminal together with the first common source-type amplifier and configured to amplify a second input signal separated from the output signal of the band suppression filter in the common input node to provide a second amplified signal to the common output node; and
an output matcher configured to match levels of impedance between the common output node and an output terminal and to transfer a combined signal generated by combining the first amplified signal and the second amplified signal with each other in the common output node to the output terminal,
wherein the first and second common source-type amplifiers form a single current path between the supply terminal of the driving voltage and the ground terminal, and
wherein the output matcher comprises a source follower amplifier configured to transfer the combined signal to the output terminal.

2. The signal amplifier of claim 1 , wherein the band suppression filter comprises:
a first resonator configured to suppress the preset band; and
a second resonator configured to suppress the preset band.

3. The signal amplifier of claim 1 , wherein the first resonator comprises a first inductor and a first capacitor connected to each other in parallel, and forms a parallel resonance point in the preset band.

4. The signal amplifier of claim 1 , wherein the second resonator comprises a second inductor and a second capacitor connected to each other in series, and further comprises a third capacitor connected to the second inductor in parallel, and forms a serial resonance point in the preset band.

5. The signal amplifier of claim 1 , wherein the first common source-type amplifier comprises a first P-type metal oxide semiconductor (PMOS) transistor having a source connected to the supply terminal of the driving voltage, a gate connected to an output terminal of the band suppression filter through a first coupling capacitor and connected to a supply terminal of a first gate voltage, and a drain connected to the common output node and configured to amplify a signal from the band suppression filter to provide the first amplified signal.

6. The signal amplifier of claim 1 , wherein the second common source-type amplifier comprises a first N-type MOS (NMOS) transistor having a drain connected to the common output node, a gate connected to an output terminal of the band suppression filter through a second coupling capacitor and connected to a supply terminal of a second gate voltage, and a source connected to the ground terminal and configured to amplify a signal from the band suppression filter to provide the second amplified signal.

7. The signal amplifier of claim 1 , wherein the output matcher comprises a second NMOS transistor having a drain connected to the supply terminal of the driving voltage, a gate connected to the common output node to receive the combined signal, and a source connected to the ground terminal through a source resistor and connected to the output terminal through an output capacitor.

8. A signal amplifier comprising:
a band suppression filter configured to suppress a preset band among bands included in an input signal;
a first common source-type amplifier connected between a supply terminal of a driving voltage and a ground terminal and configured to amplify a first input signal separated from an output signal of the band suppression filter in a common input node to provide a first amplified signal to a common output node;
a second common source-type amplifier stacked between the supply terminal of the driving voltage and the ground terminal together with the first common source-type amplifier and configured to amplify a second input signal separated from the output signal of the band suppression filter in the common input node to provide a second amplified signal to the common output node;
an output matcher configured to match levels of impedance between the common output node and an output terminal and configured to transfer a combined signal generated by combining the first amplified signal and the second amplified signal with each other in the common output node to the output terminal; and
a feedback circuit connected between the common input node and the common output node, configured to feedback a signal of the common output node to the common input node,
wherein the first and second common source-type amplifiers form a single current path between the supply terminal of the driving voltage and the ground terminal.

9. The signal amplifier of claim 8 , wherein the band suppression filter comprises:
a first resonator configured to suppress the preset band; and
a second resonator configured to suppress the preset band.

10. The signal amplifier of claim 8 , wherein the first resonator comprises a first inductor and a first capacitor connected to each other in parallel, and forms a parallel resonance point in the preset band.

11. The signal amplifier of claim 8 , wherein the second resonator comprises a second inductor and a second capacitor connected to each other in series, and further comprises a third capacitor connected to the second inductor in parallel, and forms a serial resonance point in the preset band.

12. The signal amplifier of claim 8 , wherein the first common source-type amplifier comprises a first PMOS transistor having a source connected to the supply terminal of the driving voltage, a gate connected to an output terminal of the band suppression filter through a first coupling capacitor and connected to a supply terminal of a first gate voltage, and a drain connected to the common output node and configured to amplify a signal from the band suppression filter to provide the first amplified signal.

13. The signal amplifier of claim 8 , wherein the second common source-type amplifier comprises a first NMOS transistor having a drain connected to the common output node, a gate connected to an output terminal of the band suppression filter through a second coupling capacitor and connected to a supply terminal of a second gate voltage, and a source connected to the ground terminal and configured to amplify a signal from the band suppression filter to provide the second amplified signal.

14. The signal amplifier of claim 8 , wherein the output matcher comprises a source follower amplifier configured to transfer the combined signal to the output terminal.

15. The signal amplifier of claim 8 , wherein the output matcher comprises a second NMOS transistor having a drain connected to the supply terminal of the driving voltage, a gate connected to the common output node to receive the combined signal, and a source connected to the ground terminal through a source resistor and connected to the output terminal through an output capacitor.

Assignees

• Samsung Electro Mech

Inventors

• Seong Nack Gyun
• Jang Seung Goo

Classifications

• H03F1/565

  using inductive elements · CPC title

• H03F3/193 Primary

  with field-effect devices (H03F3/195 takes precedence) · CPC title

• H03F2200/111

  the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not · CPC title

• H03F2200/516

  Some amplifier stages of an amplifier use supply voltages of different value · CPC title

• H03F2200/411

  the output amplifying stage of an amplifier comprising two power stages · CPC title