Floating evaporative assembly of aligned carbon nanotubes

US9673399B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9673399-B2
Application numberUS-201615196325-A
CountryUS
Kind codeB2
Filing dateJun 29, 2016
Priority dateFeb 11, 2015
Publication dateJun 6, 2017
Grant dateJun 6, 2017

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Abstract

Official abstract text for this publication.

High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon nanotubes that is continuously supplied to the surface of an aqueous medium, inducing evaporative self-assembly upon contacting a solid substrate.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming a film of aligned s-SWCNTs on a substrate, the method comprising: (a) partially submerging a hydrophobic substrate in an aqueous medium; (b) supplying a flow of a liquid solution to the aqueous medium, the liquid solution comprising semiconductor-selective-polymer-wrapped s-SWCNTs dispersed in an organic solvent, whereby the liquid solution spreads into a layer on the aqueous medium at an air-liquid interface and semiconductor-selective-polymer-wrapped s-SWCNTs from the layer are deposited as a film of aligned semiconductor-selective-polymer-wrapped s-SWCNTs on the hydrophobic substrate, wherein the organic solvent in the layer, which is evaporating, is resupplied by the flow of the liquid solution during the formation of the film; and (c) withdrawing the hydrophobic substrate from the aqueous medium, such that the film of aligned semiconductor-selective-polymer-wrapped s-SWCNTs is grown along the length of the hydrophobic substrate as it is withdrawn from the aqueous medium. 2. The method of claim 1 , wherein the organic solvent comprises chloroform. 3. The method of claim 1 , wherein the organic solvent comprises at least one of dichloromethane, N,N-dimethylformamide, benzene, dichlorobenzene, toluene and xylene. 4. The method of claim 1 , further comprising removing the semiconductor-selective polymer from the aligned semiconductor-selective-polymer-wrapped s-SWCNTs. 5. The method of claim 1 , wherein the semiconductor-selective-polymer-wrapped s-SWCNTs in the film have a degree of alignment of about ±20° or better. 6. The method of claim 1 , wherein the single-walled carbon nanotube linear packing density in the film is at least 40 single-walled carbon nanotubes/μm. 7. The method of claim 1 , wherein the substrate is withdrawn at a rate of at least one mm/min. 8. The method of claim 7 , wherein the concentration of s-SWCNTs in the liquid solution is at least 1 μg/mL and the flow of liquid solution is supplied at a rate of at least 160 μL/min. 9. The method of claim 1 , wherein the semiconductor-selective polymer is a polyfluorene derivative. 10. The method of claim 1 , wherein concentration of SWCNTs in the flow of liquid solution is adjusted as it is supplied to the aqueous medium to control the density of s-SWCNTs along the length of the film.

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Classifications

  • Electricity · mapped topic

  • Electricity · mapped topic

  • performed by dipping · CPC title

  • containing macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds · CPC title

  • Single-walled nanotubes · CPC title

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What does patent US9673399B2 cover?
High density films of semiconducting single-walled carbon nanotubes having a high degree of nanotube alignment are provided. Also provided are methods of making the films and field effect transistors (FETs) that incorporate the films as conducting channel materials. The single-walled carbon nanotubes are deposited from a thin layer of organic solvent containing solubilized single-walled carbon …
Who is the assignee on this patent?
Wisconsin Alumni Res Found
What technology area does this patent fall under?
Primary CPC classification H01L51/0039. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jun 06 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).