Integrated circuit structures with spin torque transfer magnetic random access memory and methods for fabricating the same

Patent metadata

Field	Value
Publication number	US-9673388-B2
Application number	US-201414518696-A
Country	US
Kind code	B2
Filing date	Oct 20, 2014
Priority date	Oct 20, 2014
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A method for fabricating an STT-MRAM integrated circuit includes forming a fixed layer over a bottom electrode layer, forming a silicon oxide layer a hardmask layer over the fixed, and forming a trench within the silicon oxide and hardmask layers, thereby exposing an upper surface of the fixed layer and sidewalls of the silicon oxide and hardmask layer. The method further includes forming a conformal barrier layer along the sidewalls of the silicon oxide and hardmask layers and over the upper surface of the fixed layer, such that the conformal barrier layer comprises sidewall portions adjacent the sidewalls of the silicon oxide and hardmask layers and a central portion in between the sidewall portions and adjacent the upper surface of the fixed layer. The method further includes forming a free layer between the sidewall portions of the barrier layer and over the central portion of the barrier layer.

First claim

What is claimed is:

1. A method for fabricating a spin torque transfer magnetic random access memory integrated circuit comprising:
forming a bottom electrode layer;
forming a fixed layer over the bottom electrode layer;
forming a silicon oxide layer over the fixed layer;
forming a hardmask layer over the silicon oxide layer;
forming a trench within the silicon oxide and hardmask layers, thereby exposing an upper surface of the fixed layer and sidewalls of the silicon oxide and hardmask layers;
forming a conformal barrier layer along the sidewalls and over the upper surface of the fixed layer, such that the conformal barrier layer comprises sidewall portions adjacent the sidewalls and a central portion in between the sidewall portions and adjacent the upper surface of the fixed layer;
forming a free layer between the sidewall portions of the barrier layer and over the central portion of the barrier layer; and
forming a top electrode layer over the free layer.

2. The method of claim 1 , wherein forming the bottom electrode layer comprises forming a material layer comprising tantalum or titanium.

3. The method of claim 1 , comprising forming the following layers: a TaN bottom electrode layer, a Ta seed layer overlying the TaN bottom electrode layer, a PtMn antiferromagnetic layer over the Ta seed layer, a CoFe pinned layer overlying the PtMn antiferromagnetic layer, an Ru coupling layer overlying the CoFe pinned layer, a CoFeB reference layer overlying the Ru coupling layer, a MgO barrier layer overlying the CoFeB reference layer, a CoFeB free layer overlying the MgO barrier layer, a Ta capping layer overlying the CoFeB free layer, and a TaN top electrode overlying the Ta capping layer.

4. The method of claim 1 , wherein forming the hardmask layer comprises forming a material layer comprising silicon nitride, silicon oxide, or a combination thereof.

5. The method of claim 1 , wherein forming the trench comprises forming a trench that is located centrally over the bottom electrode layer but having a width that is less than a width of the bottom electrode layer.

6. The method of claim 1 , wherein forming the conformal barrier layer comprises forming a material layer comprising magnesium oxide.

7. The method of claim 1 , wherein forming the free layer comprises forming a material layer comprising CoFeB.

8. The method of claim 1 , wherein forming the top electrode layer comprises forming a material layer comprising tantalum or titanium.

9. The method of claim 1 , wherein forming the free layer comprises conformally forming the free layer along the conformal barrier layer, wherein forming the free layer is performed so as to leave a portion of the trench unfilled.

10. The method of claim 1 , wherein forming the free layer comprises performing a blanket deposition of the free layer over the conformal barrier layer, wherein forming the free layer is performed so as to fill an entirety of the trench.

11. The method of claim 1 , wherein forming the free layer further comprises forming the free layer over the hardmask layer.

12. The method of claim 1 , wherein forming the top electrode further comprises forming the top electrode over the hardmask layer and the barrier layer.

13. The method of claim 12 , further comprising forming a further hardmask layer over the top electrode.

14. The method of claim 13 , further comprising removing end portions of the further hardmask layer, the top electrode layer, the free layer, and the barrier layer, thereby exposing end portion upper surfaces of the hardmask layer and end portion sidewalls of the top electrode layer, the free layer, and the barrier layer.

15. The method of claim 14 , further comprising forming sidewall spacers over the end portion upper surfaces of the hardmask layer and adjacent to the end portion sidewalls of the top electrode layer, the free layer and the barrier layer.

16. A spin torque transfer magnetic random access memory integrated circuit structure comprising:
a bottom electrode layer;
a fixed layer over the bottom electrode layer;
a silicon oxide layer over the fixed layer;
a hardmask layer over the silicon oxide layer;
a conformal barrier layer within the silicon oxide and hardmask layers, wherein the conformal barrier layer is disposed along sidewalls of the silicon oxide and hardmask layers and over an upper surface of the fixed layer such that the conformal barrier layer comprises sidewall portions adjacent the sidewalls of the silicon oxide and hardmask layers and a central portion in between the sidewall portions and adjacent the upper surface of the fixed layer;
a free layer between the sidewall portions of the barrier layer and over the central portion of the barrier layer; and
a top electrode layer over the free layer.

17. The integrated circuit structure of claim 16 , further comprising a further hardmask layer over the top electrode layer.

18. The integrated circuit structure of claim 17 , further comprising sidewall spacers adjacent end portion sidewalls of the top electrode layer, the free layer, and the barrier layer.

19. The integrated circuit structure of claim 18 , wherein the conformal barrier layer and the free layer are further disposed over the hardmask layer.

20. The integrated circuit structure of claim 19 , wherein the free layer comprises a substantially planar upper surface that extends over the hardmask layer.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Toh Eng Huat
• Tran Xuan Anh
• Quek Elgin Kiok Boone

Classifications

• H01L43/08

  Electricity · mapped topic

• H01L43/12 Primary

  Electricity · mapped topic

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title