Group III-V transistor with semiconductor field plate

Patent metadata

Field	Value
Publication number	US-9673286-B2
Application number	US-201414531181-A
Country	US
Kind code	B2
Filing date	Nov 3, 2014
Priority date	Dec 2, 2013
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

There are disclosed herein various implementations of a group III-V transistor with a semiconductor field plate. Such a group III-V transistor includes a group III-V heterostructure situated over a substrate and configured to produce a two-dimensional electron gas (2DEG). In addition, the group III-V transistor includes a source electrode, a drain electrode, and a gate situated over the group heterostructure. The group III-V transistor also includes an insulator layer over the group III-V heterostructure and situated between the gate and the drain electrode, and a semiconductor field plate situated between the gate and the drain electrode, over the insulator layer.

First claim

The invention claimed is:

1. A group III-V transistor comprising:
a group III-V heterostructure situated over a substrate and configured to produce a two-dimensional electron gas (2DEG);
a source electrode, a drain electrode, and a gate situated over said group III-V heterostructure;
an insulator layer over said group III-V heterostructure and situated between said gate and said drain electrode,
wherein a gate-facing end of said insulator layer is in contact with, and termin…

Assignees

• Int Rectifier Corp
• Infineon Technologies Americas Corp

Inventors

• Briere Michael A

Classifications

• H10D62/8503

  Electricity · mapped topic

• H01L29/405 Primary

  Electricity · mapped topic

• H01L29/2003

  Electricity · mapped topic

• H01L29/7786

  Electricity · mapped topic

• H01L29/7787

  Electricity · mapped topic