Solid-state image pickup device, electronic apparatus using such solid-state image pickup device and method of manufacturing solid-state image pickup device

Patent metadata

Field	Value
Publication number	US-9673249-B2
Application number	US-201514803561-A
Country	US
Kind code	B2
Filing date	Jul 20, 2015
Priority date	Mar 7, 2005
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A back-illuminated type solid-state image pickup device ( 1041 ) includes read circuits (Tr 1 , Tr 2 ) formed on one surface of a semiconductor substrate ( 1042 ) to read a signal from a photo-electric conversion element (PD) formed on the semiconductor substrate ( 1042 ), in which electric charges (e) generated in a photo-electric conversion region ( 1052 c 1 ) formed under at least one portion of the read circuits (Tr 1 , Tr 2 ) are collected to an electric charge accumulation region ( 1052 a ) formed on one surface side of the semiconductor substrate ( 1042 ) of the photo-electric conversion element (PD) by electric field formed within the photo-electric conversion element (PD). Thus, the solid-state image pickup device and the camera are able to make the size of pixel become very small without lowering a saturation electric charge amount (Qs) and sensitivity.

First claim

The invention claimed is:

1. A solid-state image pickup device comprising:
a semiconductor region of a first conductivity type between an electric charge accumulation region of the first conductivity type and a back side accumulation layer of a second conductivity type, the back side accumulation layer extends into a semiconductor substrate from a back side of the semiconductor substrate; and
a surface side accumulation layer of the second conductivity type between a separation region of the second conductivity type and a channel region, the separation region extends from a substrate surface side of the semiconductor substrate to the back side accumulation layer,
wherein an impurity of the second conductivity type in a first portion of the surface side accumulation layer is of a higher concentration than an impurity of the second conductivity type in a second portion of the surface side accumulation layer.

2. A solid-state image pickup device according to claim 1 , wherein the surface side accumulation layer extends into the semiconductor substrate from the surface side of the semiconductor substrate.

3. A solid-state image pickup device according to claim 1 , wherein the channel region extends into the semiconductor substrate from the surface side of the semiconductor substrate.

4. A solid-state image pickup device according to claim 1 , wherein the first conductivity type is opposite to the second conductivity type.

5. A solid-state image pickup device according to claim 1 , wherein the first conductivity type is n type and the second conductivity type is p type.

6. A solid-state image pickup device according to claim 1 , wherein the first portion of the surface side accumulation layer is between the separation region and the second portion of the surface side accumulation layer.

7. A solid-state image pickup device according to claim 6 , wherein the second portion of the surface side accumulation layer is between the channel region and the first portion of the surface side accumulation layer.

8. A solid-state image pickup device according to claim 1 , further comprising:
a region portion of the first conductivity type between the semiconductor region and the channel region.

9. A solid-state image pickup device according to claim 8 , wherein the region portion touches the electric charge accumulation region.

10. A solid-state image pickup device according to claim 8 , wherein the channel region is between the region portion and a gate electrode.

11. A solid-state image pickup device according to claim 10 , further comprising:
an interlayer insulator on the substrate surface side of the semiconductor substrate, the gate electrode is in the interlayer insulator.

12. A solid-state image pickup device according to claim 1 , further comprising:
a photo-electric conversion region of the first conductivity type between a well region of the second conductivity type and the back side accumulation layer, the well region extends into the semiconductor substrate from a surface side of the semiconductor substrate.

13. A solid-state image pickup device according to claim 12 , wherein the photo-electric conversion region touches the well region and the semiconductor region.

14. A solid-state image pickup device according to claim 12 , wherein the semiconductor region is between the separation region and the photo-electric conversion region.

15. A solid-state image pickup device according to claim 12 , wherein the channel region is between the well region and the first portion of the surface side accumulation layer.

16. A camera comprising:
the solid-state image pickup device according to claim 1 ; and
an optical system configured to focus incident light onto the solid-state image pickup device.

17. A camera according to claim 16 , wherein the solid-state image pickup device is configured to convert the incident light into a signal charge.

Assignees

• Sony Corp

Inventors

• Iwabuchi Shin
• Yokota Kazuhide
• Yanagita Takeshi
• Maruyama Yasushi

Classifications

• B65G45/18 Primary

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• B65G2812/02128

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• B65G2201/045

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• H10W90/752

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• H10W90/724

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