Epoxy resin composition for encapsulating semiconductor device and semiconductor package encapsulated using the same

Patent metadata

Field	Value
Publication number	US-9673120-B2
Application number	US-201514706663-A
Country	US
Kind code	B2
Filing date	May 7, 2015
Priority date	Sep 25, 2014
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

An epoxy resin composition for encapsulating a semiconductor device and a semiconductor package, the composition including an epoxy resin; a polyorganosiloxane resin represented by Formula 3, below; a curing agent; a curing accelerator; and an inorganic filler:

First claim

What is claimed is:

1. An epoxy resin composition for encapsulating a semiconductor device, the composition comprising:
an epoxy resin;
a polyorganosiloxane resin represented by Formula 4, below;
a curing agent;
a curing accelerator; and
an inorganic filler,

wherein:
R 1 and R 2 each independently include a substituted or unsubstituted C 1 to C 10 alkyl group, a substituted or unsubstituted C 3 to C 20 cycloalkyl group, a substituted or unsubstituted C 6 to C 20 aryl group, a substituted or unsubstituted C 7 to C 20 arylalkyl group, a substituted or unsubstituted C 1 to C 20 heteroalkyl group, a substituted or unsubstituted C 2 to C 20 heterocycloalkyl group, a substituted or unsubstituted C 2 to C 20 alkenyl group, a substituted or unsubstituted C 2 to C 20 alkynyl group, a substituted or unsubstituted C 1 to C 10 alkoxy group, an epoxy-substituted organic group, or a hydroxyl-substituted organic group;
n is 0 to about 100 on average, and
the polyorganosiloxane resin is present in the composition in an amount of about 0.1 wt % to about 1.0 wt %, based on a total weight of the composition.

2. The epoxy resin composition as claimed in claim 1 , wherein, in Formula 4, at least one R 2 is an epoxy-substituted organic group.

3. The epoxy resin composition as claimed in claim 1 , wherein the composition includes:
about 3 wt % to about 15 wt % of the epoxy resin;
the about 0.1 wt % to about 1.0 wt % of the polyorganosiloxane resin;
about 2 wt % to about 10 wt % of the curing agent;
about 0.01 wt % to about 1.0 wt % of the curing accelerator; and
about 82 wt % to about 92 wt % of the inorganic filler, all wt % being based on the total weight of the composition.

4. The epoxy resin composition as claimed in claim 1 , wherein the epoxy resin includes at least one of an ortho-cresol novolac epoxy resin represented by Formula 1 or a phenolaralkyl epoxy resin represented by Formula 2:

wherein, in Formula 1, R is a C 1 to C 4 alkyl group and n is 0 to about 7 on average,

wherein, in Formula 2, n is about 1 to about 7 on average.

5. The epoxy resin composition as claimed in claim 1 , wherein the curing agent includes a phenolaralkyl type phenol resin, a xylok type phenol resin, a phenol novolac type phenol resin, a cresol novolac type phenol resin, a naphthol type phenol resin, a terpene type phenol resin, a polyfunctional phenol resin, a polyaromatic phenol resin, a dicyclopentadiene phenol resin, a terpene modified phenol resin, a dicyclopentadiene modified phenol resin, a novolac type phenol resin prepared from bisphenol A and resol, a multivalent phenol compound, an acid anhydride, metaphenylenediamine, diaminodiphenylmethane, or diaminodiphenylsulfone.

6. The epoxy resin composition as claimed in claim 1 , wherein the curing accelerator includes a tertiary amine, an organometallic compound, an organophosphorus compound, an imidazole compound, or a boron-containing compound.

7. The epoxy resin composition as claimed in claim 1 , wherein the inorganic filler includes fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide, antimony oxide, or glass fiber.

8. The epoxy resin composition as claimed in claim 1 , wherein the inorganic filler includes fused spherical silica having an average particle diameter of about 0.001 μm to about 30 μm.

9. A semiconductor package, comprising:
a substrate;
a semiconductor device mounted on the substrate;
a connecting portion electrically connecting the semiconductor device and the substrate; and
a molding portion encapsulating the semiconductor device and the connecting portion,
wherein the molding portion is prepared from the epoxy resin composition for encapsulating a semiconductor device as claimed claim 1 .

10. The semiconductor package as claimed in claim 9 , wherein the semiconductor device is mounted on the substrate via a die adhesive film, the die adhesive film being a silicon-based adhesive.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Kim Sang Jin
• Lee Eun Jung
• Cho Yong Han

Classifications

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W74/40

  characterised by their materials · CPC title

• H10W70/681

  comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage · CPC title

• H10W72/075

  of bond wires · CPC title

• H10W72/073

  of die-attach connectors · CPC title