Film forming apparatus, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9673092-B2
Application number	US-201414199946-A
Country	US
Kind code	B2
Filing date	Mar 6, 2014
Priority date	Mar 6, 2014
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A film forming apparatus includes a reactor chamber, a first electrode provided in the reactor chamber and receiving electrical power, a second electrode provided in the reactor chamber and facing the first electrode, a gas supply inlet for supplying material gas to a space between the first and second electrodes, and a gas exhaust outlet for discharging the material gas. Insulating material is not exposed to a flow path for the material gas in the reactor chamber.

First claim

What is claimed is:

1. A film forming apparatus comprising:
a reactor chamber;
a first electrode provided in said reactor chamber and receiving electrical power;
a second electrode provided in said reactor chamber and facing said first electrode;
a gas supply inlet for supplying material gas to a space between said first and second electrodes;
a gas exhaust outlet for discharging said material gas;
an exhaust side insulating part formed of an insulating material and disposed between said first electrode and said reactor chamber, said exhaust side insulating part forming a portion of a flow path for said material gas and guiding said material gas from between said first and second electrodes to said gas exhaust outlet; and
an exhaust side metal film covering said exhaust side insulating part in a manner without electrically connecting said first electrode to said reactor chamber,
wherein insulating material is not exposed to a flow path for said material gas in said reactor chamber.

2. The film forming apparatus according to claim 1 , wherein,
said exhaust side insulating part provides a constricted pathway communicating with between said first and second electrodes,
said exhaust side insulating part provides a cavity communicating with said constricted pathway,
said constricted pathway and said cavity are said portion of said flow path, and
the inside of both said constricted pathway and said cavity are coated with said exhaust side metal film.

3. The film forming apparatus according to claim 2 , wherein said exhaust side metal film is aluminum.

4. The film formation apparatus according to claim 1 , wherein the film formed is metal-based film.

5. The film forming apparatus according to claim 1 , further comprising:
a insulating part formed of an insulating material and disposed between said first electrode and said gas supply inlet; and
a metal film covering said insulating part in a manner without electrically connecting said first electrode to said gas supply inlet.

6. The film forming apparatus according to claim 5 , wherein said metal film is aluminum.

Assignees

• Asm Ip Holding Bv

Inventors

• Nakano Ryu
• Takamure Noboru
• Arai Hiroki

Classifications

• H10W20/057 Primary

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• C23C16/4405

  Cleaning of reactor or parts inside the reactor by using reactive gases · CPC title

• H01J37/32834

  Exhausting · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• C23C16/45544 Primary

  characterized by the apparatus · CPC title