High frequency filter for improved RF bias signal stability

Patent metadata

Field	Value
Publication number	US-9673069-B2
Application number	US-201313945756-A
Country	US
Kind code	B2
Filing date	Jul 18, 2013
Priority date	Jul 20, 2012
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a “short” at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode.

First claim

That which is claimed:

1. A substrate processing system comprising:
a radio frequency (RF) source configured to generate RF source energy in a first frequency band to form a plasma within the system, wherein the RF source is terminated through an electrode;
a bias source coupled to the electrode to apply bias energy to the electrode;
a first filter disposed between the bias source and the electrode, the first filter configured to pass the bias energy to the electrode, block RF source energy in the first frequency band from reaching the bias source and provide a low impedance to ground for the RF source energy in the first frequency band; and
an RF sensor disposed in serial with the first filter, wherein both the RF sensor and the first filter that is configured to pass the bias energy to the electrode and provide the low impedance to ground for the RF source energy in the first frequency band are disposed between the electrode and the bias source, and the RF sensor is configured to provide an indication of a voltage potential of the electrode.

2. The substrate processing system of claim 1 , wherein the low impedance to ground for the RF source energy in the first frequency band is configured as an RF short at the first frequency band of the RF source energy.

3. The substrate processing system of claim 1 , wherein the first filter is a low pass filter.

4. The substrate processing system of claim 3 , wherein the low pass filter comprises an inductor, a first capacitor and a second capacitor.

5. The substrate processing system of claim 4 , wherein the inductor has a value of approximately 4 microhenries, the first capacitor has a value of approximately 1200 picofarads and the second capacitor has a value of approximately 150 to 200 picofarads.

6. The substrate processing system of claim 1 , wherein the first filter is a band pass filter.

7. The substrate processing system of claim 1 , wherein the RF source generates a first frequency and the bias source generates a second frequency that is different from the first frequency.

8. The substrate processing system of claim 1 , wherein the RF source generates a first frequency of approximately 13.56 MHz and the bias source generates a second frequency of approximately 400 kHz.

9. The substrate processing system of claim 1 , wherein the RF sensor is housed with the first filter.

10. A substrate processing system comprising:
a substrate processing chamber;
a substrate support positioned within and configured to be an electrode within the substrate processing chamber;
a radio frequency (RF) source configured to generate RF source energy to form a plasma within the chamber from gases introduced into the chamber, wherein the RF source energy is coupled through the electrode and through a termination to ground;
a bias source coupled to the electrode to apply bias energy to the electrode;
a filter disposed between the electrode and the bias source, wherein the filter is configured to pass the bias energy to the electrode and to provide a low impedance to ground for the RF source energy; and
an RF sensor disposed in serial with the filter, both the RF sensor and the filter disposed between the electrode and the bias source, and the RF sensor configured to selectively measure voltage of one of the RF source energy or the bias energy on the electrode.

11. The substrate processing system according to claim 10 , wherein the filter is configured to block the RF source energy from reaching the bias source.

12. The substrate processing system according to claim 10 , wherein the termination to ground is configured to have a designed impedance at a frequency of the RF source.

13. The substrate processing system according to claim 10 , wherein the termination to ground is configured as a short to ground at a frequency of the RF source.

14. The substrate processing system according to claim 10 , wherein the termination to ground is contained in a common housing with the filter.

Assignees

• Applied Materials Inc

Inventors

• Trachuk Yuri
• Chebi Robert
• Almgren Carl

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H01J37/321

  the radio frequency energy being inductively coupled to the plasma · CPC title

• H01J37/32174

  Circuits specially adapted for controlling the RF discharge · CPC title

• H05H1/46 Primary

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title