Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US-9046767-B2 · Jun 2, 2015 · US
Cholate photoacid generators and photoresists comprising same
US9671689B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9671689-B2 |
| Application number | US-96533910-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 10, 2010 |
| Priority date | Dec 10, 2009 |
| Publication date | Jun 6, 2017 |
| Grant date | Jun 6, 2017 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.
First claim
Opening claim text (preview).
What is claimed is: 1. A photoacid generator compound represented by a structure: wherein M + represents a cation group, and the definition of the group R, m and n are defined directly below the structure. 2. A photoacid generator compound selected from: 3. A photoresist composition comprising a resin component and a photoacid generator compound of claim 1 . 4. A photoresist composition comprising a resin component and a photoacid generator compound of claim 2 . 5. A method for forming a photoresist relief image comprising: (a) applying a coating layer of a photoresist composition of claim 3 on a substrate; (b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image. 6. A method for forming a photoresist relief image comprising: (a) applying a coating layer of a photoresist composition of claim 4 on a substrate; (b) exposing the photoresist coating layer to patterned activating radiation and developing the exposed photoresist layer to provide a relief image.
Assignees
Inventors
Classifications
- C07J31/006Primary
not covered by C07J31/003 · CPC title
- C07C381/12Primary
Sulfonium compounds · CPC title
- G03F7/0045Primary
with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title
with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title
the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9671689B2 cover?
- New photoacid generator compounds (“PAGs”) are provided that comprise a cholate moiety and photoresist compositions that comprise such PAG compounds.
- Who is the assignee on this patent?
- Aqad Emad, Li Mingqi, Mattia Joseph, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C07J31/006. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 06 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).