Production method of phosphor

Patent metadata

Field	Value
Publication number	US-9670405-B2
Application number	US-201414444342-A
Country	US
Kind code	B2
Filing date	Jul 28, 2014
Priority date	Aug 11, 2004
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

A production method of a phosphor includes firing a starting material mixture in a nitrogen atmosphere at a temperature range between 1,500° C. inclusive and 2,200° C. inclusive. The starting material mixture is a mixture of metallic compounds, and is capable of constituting a composition including M, A, Al, O, and N (M is Eu; and A is one kind or two or more kinds of element(s) selected from C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W) by firing.

First claim

The invention claimed is:

1. A production method of a phosphor, comprising:
firing a starting material mixture in a nitrogen atmosphere at a temperature range between 1,500° C. inclusive and 2,200° C. inclusive,
wherein the starting material mixture is a mixture of metallic compounds, and is capable of constituting a composition comprising M, A, Al, O, and N (M is Eu; and A is at least an element selected from the group consisting of C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W) by firing,
the phosphor comprises an AlN-based crystal including
an element A including Si;
Eu as a metallic element M wherein Eu is divalent; and
oxygen,
the AlN-based crystal has a wurtzite-type AlN crystal structure or a crystal structure selected from the group consisting of 2Hδ, 27R, 21R, 12H, 15R, and 8H,
said elements A and M, and the oxygen are dissolved in the AlN-based crystal in a solid state, and
the phosphor emits fluorescence having a peak at a wavelength within a range between 450 nm inclusive and 520 nm inclusive by irradiation of an excitation source.

2. The production method of the phosphor of claim 1 , wherein the mixture of metallic compounds is a mixture of: a metal, oxide, carbonate, nitride, fluoride, chloride, or oxynitride of M; silicon nitride; and aluminum nitride.

3. The production method of the phosphor of claim 1 , wherein A is Si.

4. The production method of the phosphor of claim 1 , wherein the nitrogen atmosphere is a gas atmosphere at a pressure in a range between 0.1 MPa inclusive and 100 MPa inclusive.

5. The production method of the phosphor of claim 1 , further comprising firing the metallic compounds each in a form of powder or aggregations, after filling the metallic compounds in a container in a state where the metallic compounds are held at a filling ratio exhibiting a relative bulk density of 40% or less.

6. The production method of the phosphor of claim 5 , wherein the container is made of boron nitride.

7. The production method of the phosphor of claim 5 , wherein the aggregations have an averaged aggregation size of 500 μm or less.

8. The production method of the phosphor of claim 1 , wherein the firing step is conducted not by means of hot-press, but exclusively by means of gas pressure sintering.

9. The production method of the phosphor of claim 1 , further comprising adjusting synthesized phosphor powders in granularity, to cause the synthesized phosphor powders to have an averaged particle size between 50 nm inclusive and 20 μm inclusive, by at least one procedure selected from the group consisting of pulverization, classification, and acid treatment.

10. The production method of the phosphor of claim 1 , further comprising heat treating phosphor powder after firing, the phosphor powder after pulverization treatment, or the phosphor powder after granularity adjustment, at a temperature between 1,000° C. inclusive and the firing temperature inclusive.

11. The production method of the phosphor of claim 1 , further comprising before the firing step, adding an inorganic compound for generating a liquid phase at the firing temperature or below, into the mixture of metallic compounds.

12. The production method of the phosphor of claim 11 , wherein the inorganic compound for generating the liquid phase at the firing temperature or below, is at least one selected from the group consisting of fluoride, chloride, iodide, bromide, and at least one kind of phosphate selected from the group consisting of Li, Na, K, Mg, Ca, Sr, Ba, and Al.

13. The production method of the phosphor of claim 11 , wherein the inorganic compound for generating the liquid phase at the firing temperature or below, is calcium fluoride or aluminum fluoride.

14. The production method of the phosphor of claim 11 , wherein the inorganic compound for generating the liquid phase at the firing temperature or below, is added at an amount between 0.1 parts by weight inclusive and 10 parts by weight inclusive, relative to 100 parts by weight of the mixture of metallic compounds.

15. The production method of the phosphor of claim 1 , further comprising washing a product after firing by a solvent comprising water or an acidic water solution, to thereby decrease contents of a glass phase, second phase, or impurity phase included in the product.

16. The production method of the phosphor of claim 15 , wherein acid of the acidic water solution comprises at least one selected from the group consisting of sulfuric acid, hydrochloric acid, nitric acid, hydrofluoric acid, and organic acids.

17. The production method of the phosphor of claim 15 , wherein acid of the acidic water solution is a mixture of hydrofluoric acid and sulfuric acid.

Assignees

• Nat Inst For Materials Science

Inventors

• Hirosaki Naoto

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• C09K11/7715

  containing cerium · CPC title