Sensor structure for sensing pressure waves and ambient pressure

Patent metadata

Field	Value
Publication number	US-9670059-B2
Application number	US-201615077925-A
Country	US
Kind code	B2
Filing date	Mar 23, 2016
Priority date	Mar 6, 2014
Publication date	Jun 6, 2017
Grant date	Jun 6, 2017

Abstract

In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive layer arranged on an opposite side of the electrode element from the first conductive layer. The first conductive layer and the second conductive layer may form a chamber. The pressure in the chamber may be lower than the pressure outside of the chamber.

First claim

What is claimed is:

1. A sensor structure, comprising:
a support structure having a first side;
a first electrically conductive layer formed on the first side of the support structure;
an electrode element arranged over the first conductive layer; and

a second electrically conductive layer arranged on an opposite side of the electrode element from the first electrically conductive layer;
a first chamber, the first chamber formed from a first portion of the first electrically conductive layer and a portion of the second electrically conductive layer; and
a second chamber, the second chamber formed from a second portion of the first electrically conductive layer and a portion of the electrode element.

2. The sensor structure of claim 1 , wherein a pressure in the first chamber is lower than a pressure outside the first chamber.

3. The sensor structure of claim 1 , wherein a pressure in the second chamber is lower than a pressure outside the second chamber.

4. The sensor structure of claim 1 , further comprising:
a first spacer layer formed over a portion of the first electrically conductive layer;
a second spacer layer formed over a portion of the second electrically conductive layer;
a first pillar structure arranged in the first chamber between the first electrically conductive layer and the second electrically conductive layer; and
a second pillar structure arranged in the second chamber between the first electrically conductive layer and the electrode element.

5. The sensor structure of claim 1 ,
wherein the electrode element is at least partially arranged in the first chamber.

6. The sensor structure of claim 1 ,
wherein a pressure in the first chamber is substantially a vacuum pressure and a pressure in the second chamber is substantially a vacuum pressure.

7. The sensor structure of claim 4 ,
wherein the first spacer layer is arranged to fix the first electrically conductive layer to the electrode element and the second spacer layer is arranged to fix the second electrically conductive layer to the electrode element.

8. The sensor structure of claim 4 ,
wherein the first pillar structure is configured to electrically couple the first electrically conductive layer to the second electrically conductive layer.

9. The sensor structure of claim 4 ,
wherein the first pillar structure intersects the first chamber.

10. The sensor structure of claim 4 ,
wherein the second pillar structure is configured to electrically isolate the first electrically conductive layer from the electrode element.

11. The sensor structure of claim 4 ,
wherein the second pillar structure intersects the second chamber.

12. The sensor structure of claim 4 , further comprising:
a cavity formed in the support structure; and
a void formed through the first electrically conductive layer, the first spacer layer, the electrode element, the second spacer layer, and the second electrically conductive layer.

13. The sensor structure of claim 12 ,
wherein at least a portion of the first electrically conductive layer is suspended across the cavity in the support structure.

14. The sensor structure of claim 12 ,
wherein the void is configured to electrically isolate a portion of the sensor structure containing the first chamber from a portion containing the second chamber.

15. The sensor structure of claim 1 ,
wherein the sensor structure comprises a micro-electro-mechanical system.

16. A sensor structure arrangement, comprising:
a sensor structure comprising:
a support structure having a first side;
a first electrically conductive layer formed on the first side of the support structure;
an electrode element arranged over the first conductive layer; and

a second electrically conductive layer arranged on an opposite side of the electrode element from the first electrically conductive layer;
a first chamber, the first chamber formed from a first portion of the first electrically conductive layer and a portion of the second electrically conductive layer; and
a second chamber, the second chamber formed from a second portion of the first electrically conductive layer and a portion of the electrode element; and

a circuit configured to detect at least one of a signal generated by a deflection of the first chamber and a signal generated by a deformation of the second chamber.

17. The sensor structure arrangement of claim 16 ,
wherein a pressure in the first chamber is lower than the pressure outside the first chamber.

18. The sensor arrangement of claim 16 , wherein a pressure in the second chamber is lower than the pressure outside the second chamber.

19. An electronic device, comprising:
a first chip including a pressure sensor and a microphone, the pressure sensor and the microphone comprising a sensor structure, the sensor structure comprising:
a support structure having a first side;
a first electrically conductive layer formed on the first side of the support structure;
an electrode element arranged over the first conductive layer; and
a second electrically conductive layer arranged on an opposite side of the electrode element from the first electrically conductive layer;
a first chamber, the first chamber formed from a first portion of the first electrically conductive layer and a portion of the second electrically conductive layer; and
a second chamber, the second chamber formed from a second portion of the first electrically conductive layer and a portion of the electrode element; and

a circuit configured to process at least one signal provided by at least one of the pressure sensor or the microphone.

20. The electronic device of claim 19 , further comprising:
a second chip configured to process the at least one signal received from the circuit.

21. The electronic device of claim 20 , wherein the second chip comprises a signal processing device.

22. The electronic device of claim 20 , wherein the second chip comprises a subscriber identification module.

23. The electronic device of claim 20 , the electronic device is a communication device.

Assignees

• Infineon Technologies Ag

Inventors

• Dehe Alfons
• Helm Roland

Classifications

• G01L1/14

  by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators · CPC title

• B81B2201/0264

  Pressure sensors · CPC title

• G01L9/0072

  using variations in capacitance · CPC title

• G01L13/025

  using diaphragms · CPC title

• H04R23/00

  Transducers other than those covered by groups H04R9/00 - H04R21/00 {(diaphragms for transducers of the distributed-mode type H04R7/045)} · CPC title