Photovoltaic cells having electrical contacts formed from metal nanoparticles and methods for production thereof

Patent metadata

Field	Value
Publication number	US-9666750-B2
Application number	US-201514720695-A
Country	US
Kind code	B2
Filing date	May 22, 2015
Priority date	Feb 10, 2012
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

Photovoltaic cells having copper contacts can be made by using copper nanoparticles during their fabrication. Such photovoltaic cells can include a copper-based current collector located on a semiconductor substrate having an n-doped region and a p-doped region. The semiconductor substrate is configured for receipt of electromagnetic radiation and generation of an electrical current therefrom. The copper-based current collector includes an electrically conductive diffusion barrier disposed on the semiconductor substrate and a copper contact disposed on the electrically conductive diffusion barrier. The copper contact is formed from copper nanoparticles that have been at least partially fused together. The electrically conductive diffusion barrier limits the passage of copper therethrough.

First claim

What is claimed is the following:

1. A method for forming a photovoltaic cell, the method comprising:
applying an electrically conductive diffusion barrier directly onto a semiconductor substrate comprising an n-doped region and a p-doped region, the electrically conductive diffusion barrier limiting the passage of copper therethrough;
wherein the electrically conductive diffusion barrier is selected from the group consisting of a metal nitride, a metal carbide, a metal boride, a metal tungstide, and any combination thereof;

applying copper nanoparticles onto the electrically conductive diffusion barrier; and
heating the copper nanoparticles to a temperature sufficient to at least partially fuse the copper nanoparticles together and form a bulk lattice of polycrystalline copper, thereby forming a copper contact on the electrically conductive diffusion barrier.

2. The method of claim 1 , wherein the electrically conductive diffusion barrier and the copper contact are disposed on the n-doped region of the semiconductor substrate.

3. The method of claim 1 , wherein the copper nanoparticles are applied to the electrically conductive diffusion barrier as a dispensible nanoparticle paste formulation comprising an organic matrix in which the copper nanoparticles are dispersed.

4. The method of claim 3 , wherein at least a portion of the copper nanoparticles are about 20 nm in size or smaller.

5. The method of claim 3 , wherein the dispensible nanoparticle paste formulation further comprises micron-scale copper particles, a conductive additive, a corrosion-resistant substance, or any combination thereof.

6. The method of claim 1 , wherein the semiconductor substrate comprises a silicon substrate.

7. The method of claim 6 , wherein the electrically conductive diffusion barrier is selected from the group consisting of TiN, TaN, WN, TiW, and any combination thereof.

8. The method of claim 7 , wherein the electrically conductive diffusion barrier is directly applied to the semiconductor substrate by plating, physical vapor deposition, or chemical vapor deposition.

9. The method of claim 7 , further comprising:
directly applying a plurality of nanoparticles to the semiconductor substrate; and
at least partially fusing the nanoparticles together to form the electrically conductive diffusion barrier.

10. The method of claim 1 , further comprising:
adhering the semiconductor substrate to a surface while at least partially fusing the copper nanoparticles together.

11. The method of claim 1 , wherein the copper contact is located on a face of the photovoltaic cell that receives electromagnetic radiation.

12. The method of claim 1 , wherein the copper contact is located on a face of the photovoltaic cell opposite a face of the photovoltaic cell that receives electromagnetic radiation.

13. The method of claim 1 , further comprising:
forming a corrosion-resistant coating on the copper contact, the corrosion-resistant coating comprising a corrosion-resistant substance.

14. The method of claim 13 , wherein the corrosion-resistant substance is selected from the group consisting of a Sn coating, an Ag coating, a SnAgCu coating, an Al coating, a Si coating, a polymer coating, and any combination thereof.

15. The method of claim 1 , wherein a conductive additive is mixed with the copper nanoparticles being formed into the copper contact.

16. The method of claim 15 , wherein the conductive additive is selected from the group consisting of carbon black, pyrene, phenanthrene, carbon nanotubes, graphene, and any combination thereof.

17. The method of claim 1 , wherein the copper nanoparticles comprise a surfactant layer overcoating a copper core.

18. A method for forming a photovoltaic cell, the method comprising:
applying an electrically conductive diffusion barrier onto a semiconductor substrate comprising an n-doped region and a p-doped region, the electrically conductive diffusion barrier limiting the passage of copper therethrough;
applying copper nanoparticles onto the electrically conductive diffusion barrier;
wherein the copper nanoparticles comprise a surfactant layer overcoating a copper core; and

heating the copper nanoparticles to a temperature sufficient to at least partially fuse the copper nanoparticles together and form a bulk lattice of polycrystalline copper, thereby forming a copper contact on the electrically conductive diffusion barrier.

Assignees

• Lockheed Corp

Inventors

• Zinn Alfred A
• Fried Andrew
• Hu Sidney

Classifications

• H10P14/46

  using a liquid · CPC title

• H01B1/22 Primary

  the conductive material comprising metals or alloys · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title