Methods for manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-9666433-B2
Application number	US-201615130515-A
Country	US
Kind code	B2
Filing date	Apr 15, 2016
Priority date	May 27, 2015
Publication date	May 30, 2017
Grant date	May 30, 2017

Abstract

Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming carbon-containing patterns on an etch target;
increasing a degree to which side surfaces of the carbon-containing patterns are hydrophilic by treating the carbon-containing patterns with a hydrophilic-enhancing process;
forming poly-crystalline silicon spacers on the side surfaces of the carbon-containing patterns after the hydrophilic-enhancing process; and
patterning the etch target using the poly-crystalline silicon spacers.

2. The method of claim 1 , wherein the hydrophilic-enhancing process comprises: forming an oxide layer on the side surfaces of the carbon-containing patterns.

3. The method of claim 1 , wherein the poly-crystalline silicon spacers are formed at 400 degrees Celsius or less.

4. The method of claim 3 , wherein the poly-crystalline silicon spacers include boron (B) atoms.

5. The method of claim 1 , wherein forming the carbon-containing patterns comprises:
forming a silicon-containing layer on a carbon-containing layer; and
etching the carbon-containing layer using the silicon-containing layer as an etch mask.

6. The method of claim 5 , wherein etching the carbon-containing layer comprises: performing a dry etching process using oxygen plasma, and
wherein silicon atoms in the silicon-containing layer are combined with oxygen atoms in the oxygen plasma to form an oxide layer on the side surfaces of the carbon-containing patterns while the carbon-containing layer is etched.

7. The method of claim 5 , wherein the silicon-containing layer includes at least one of SiO 2 , SiON, SiN 2 , SiBN, SiCN, and silicon-spin on hardmask (Si—SOH).

8. The method of claim 1 , wherein surfaces of the carbon-containing patterns terminate with first elements, and
wherein the hydrophilic-enhancing process comprises: replacing at least some of the first elements with second elements that are more hydrophilic than the first elements.

9. The method of claim 8 , wherein the second elements constitute material that has negative polarity or has electronegativity greater than that of the material constituted by the first elements.

10. The method of claim 8 , wherein the first elements include C or H, and
wherein the material constituted by the second elements consists of at least one of O, ON, OH, N, and NH.

11. The method of claim 8 , wherein the hydrophilic-enhancing process comprises: performing a wet treatment process using O 3 or a wet treatment process using NH 4 OH and H 2 O 2 .

12. The method of claim 1 , wherein patterning the etch target using the poly-crystalline silicon spacers comprises:
forming a mask layer on the etch target before the polycrystalline silicon spacers are formed so that the mask layer is interposed between the etch target and the poly-crystalline silicon spacers;
etching the mask layer using the poly-crystalline silicon spacers as an etch mask to form mask patterns; and
etching the etch target using the mask patterns as an etch mask.

13. The method of claim 1 , wherein patterning the etch target using the poly-crystalline silicon spacers comprises:
forming spacer patterns on side surfaces of the poly-crystalline silicon spacers; and
removing the poly-crystalline silicon spacers.

14. The method of claim 1 , wherein the carbon-containing patterns contain carbon in an amount equal to or greater than 70 wt %.

15. The method of claim 14 , wherein the forming of the carbon-containing patterns includes forming at least one of an amorphous carbon layer and a carbon-spin on hardmask (C—SOH) on the etch target.

16. A method of manufacturing a semiconductor device, the method comprising:
forming carbon-containing patterns on an etch target, the carbon-containing patterns having top surfaces and side surfaces;
providing second material, that is more hydrophilic than first material constituting the side surfaces of the carbon-containing patterns terminate, along the side surfaces of the carbon-containing patterns so that the side surfaces become more hydrophilic;
forming poly-crystalline silicon spacers on the side surfaces of the carbon-containing patterns provided with the second material; and
patterning the etch target layer using the poly-crystalline silicon spacers.

17. The method of claim 16 , wherein the hydrophilic material includes silicon oxide.

18. The method of claim 16 , wherein the patterning of the etch target layer using the poly-crystalline silicon spacers comprises:
forming spacer patterns on side surfaces of the poly-crystalline silicon spacers,
subsequently removing the poly-crystalline silicon spacers, and
patterning the etch target layer using the spacer patterns.

19. The method of claim 16 , wherein the poly-crystalline silicon spacers include boron (B) atoms, and the poly-crystalline silicon spacers are formed at 400 degrees Celsius or less.

20. A method of manufacturing a semiconductor device, the method comprising:
forming on an etch target a series of spaced apart carbon-containing patterns having side surfaces;
forming insulating material of at least one element and/or at least one compound selected from the group consisting of O, ON, OH, N and NH at the side surfaces of the carbon-containing patterns;
forming a mask; and
etching the etch target using the mask as an etch mask, and
wherein the forming of the mask comprises forming polycrystalline silicon on the insulating material including by a process in which atoms of silicon are deposited directly on the insulating material, and removing the carbon-containing patterns after the polycrystalline silicon has been formed on the insulating material.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Im Badro
• Cho Yoonchul
• Kang Sangyeol
• Kim Daehyun
• Lee Dongkak
• Lee Jun-Noh
• Kim Bonghyun
• Lee Kongsoo

Classifications

• H10P14/6923

  the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/416

  of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title