Multilayer capacitor
US-2024339267-A1 · Oct 10, 2024 · US
US9666371B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9666371-B2 |
| Application number | US-201615002324-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 20, 2016 |
| Priority date | Jan 28, 2015 |
| Publication date | May 30, 2017 |
| Grant date | May 30, 2017 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A multilayer ceramic capacitor has a laminate comprising dielectric layers stacked alternately with internal electrode layers of different polarities, wherein: the dielectric layers contain ceramic grains whose primary component is BaTiO 3 ; the ceramic grains contain at least one type of donor element (D) selected from the group that includes Nb, Mo, Ta, and W, and at least one type of acceptor element (A) selected from the group that includes Mg and Mn; and the ratio of the concentration of the donor element (D) and that of the acceptor element (A) (D/A) is greater than 1 at the center parts of the ceramic grains, while the D/A ratio is less than 1 at the outer edge parts of the ceramic grains (if A=0, then D/A=∞ and D=A=0 never occurs).
Opening claim text (preview).
We claim: 1. A multilayer ceramic capacitor having a laminate comprising dielectric layers stacked alternately with internal electrode layers of different polarities, wherein: the dielectric layers contain ceramic grains whose primary component is BaTiO 3 ; the ceramic grains contain at least one donor element (D) selected from the group consisting of Nb, Mo, Ta, and W, and at least one acceptor element (A) selected from the group consisting of Mg and Mn; and a ratio of a concentration of the donor element (D) and that of the acceptor element (A) (D/A) is greater than 1 at center parts of the ceramic grains, while the D/A ratio is less than 1 at outer edge parts of the ceramic grains (if A=0, then D/A=∞ and D=A=0 never occurs). 2. A multilayer ceramic capacitor according to claim 1 , wherein the concentration of the donor element (D) in the dielectric layers is 0.05 to 0.3 mol relative to 100 mol of BaTiO 3 . 3. A multilayer ceramic capacitor according to claim 1 , wherein the concentration of the acceptor element (A) in the dielectric layers is greater than 0.3 mol but less than 2.0 mol relative to 100 mol of BaTiO 3 . 4. A multilayer ceramic capacitor according to claim 2 , wherein the concentration of the acceptor element (A) in the dielectric layers is greater than 0.3 mol but less than 2.0 mol relative to 100 mol of BaTiO 3 . 5. A ceramic capacitor according to claim 1 , wherein the donor element (D) present at the center parts of the ceramic grains is the same element as that present at the outer edge parts. 6. A ceramic capacitor according to claim 2 , wherein the donor element (D) present at the center parts of the ceramic grains is the same element as that present at the outer edge parts. 7. A ceramic capacitor according to claim 3 , wherein the donor element (D) present at the center parts of the ceramic grains is the same element as that present at the outer edge parts. 8. A ceramic capacitor according to claim 4 , wherein the donor element (D) present at the center parts of the ceramic grains is the same element as that present at the outer edge parts. 9. A ceramic capacitor according to claim 1 , wherein an average grain size of the ceramic grains is 80 to 800 nm. 10. A ceramic capacitor according to claim 2 , wherein an average grain size of the ceramic grains is 80 to 800 nm. 11. A ceramic capacitor according to claim 3 , wherein an average grain size of the ceramic grains is 80 to 800 nm. 12. A ceramic capacitor according to claim 4 , wherein an average grain size of the ceramic grains is 80 to 800 nm. 13. A ceramic capacitor according to claim 5 , wherein an average grain size of the ceramic grains is 80 to 800 nm. 14. A ceramic capacitor according to claim 6 , wherein an average grain size of the ceramic grains is 80 to 800 nm. 15. A ceramic capacitor according to claim 7 , wherein an average grain size of the ceramic grains is 80 to 800 nm. 16. A ceramic capacitor according to claim 8 , wherein an average grain size of the ceramic grains is 80 to 800 nm.
characterised by the order of addition of constituents or additives · CPC title
Magnesium oxides or oxide-forming salts thereof · CPC title
Molybdenum oxides, molybdates or oxide forming salts thereof, e.g. cadmium molybdate · CPC title
Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO · CPC title
Tungsten oxides, tungstates, or oxide-forming salts thereof · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.